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1、1 of 24 Optimum Technology Matching Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT Functional Block Diagram RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue a
2、re trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Gre
3、ensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Ordering Information RF MEMS LDMOS RF5110G 3 V GENERAL PURPOSE/GSM POWER AMPLIFIER The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured on an advanced Ga
4、As HBT process, and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900 MHz band, and general purpose radio applications in standard sub-bands from 150 MHz to 960 MHz. On-board power control provides over 70 dB of control range with an ana- log voltage input, an
5、d allows for power down with a logic “low“ in standby operation. The device is self-contained with 50 input and the output can be easily matched to obtain optimum power and efficiency characteristics. Features ?General Purpose: Single 2.8 V to 3.6 V Supply 32 dBm Output Power 53% Efficiency 150 MHz
6、to 960 MHz Operation ?GSM: Single 2.7 V to 4.8 V Supply +36 dBm Output Power at 3.5 V 32 dB Gain with Analog Gain Con- trol 57% Efficiency 800 MHz to 950 MHz Operation Supports GSM and E-GSM Applications ?FM Radio Applications: 150 MHz/220 MHz/450 MHz 865 MHz to 928 MHz ?3 V GSM Cellular Handsets ?G
7、PRS Compatible RF5110G3 V General Purpose/GSM Power Amplifier RF5110GPCBA-410 Fully Assembled Evaluation Board Rev A7 DS090521 ? RoHS thus, a blocking cap must be inserted in series. Also, the first stage bias may be adjusted by a resis- tive divider with high value resistors on this pin to VPC and
8、ground. For nominal operation, however, no external adjustment is necessary as internal resistors set the bias point optimally. VCC1 and VCC2 provide supply voltage to the first and second stage, as well as provides some frequency selectivity to tune to the operating band. Essentially, the bias is f
9、ed to this pin through a short microstrip. A bypass capacitor sets the inductance seen by the part, so placement of the bypass cap can affect the frequency of the gain peak. This supply should be bypassed individually with 100 pF capacitors before being combined with VCC for the output stage to prev
10、ent feedback and oscillations. 9 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. The RF OUT pin provides the output power. Bias for the final stage is fed to this output line, and the feed must
11、be capable of supporting the approximately 2 A of current required. Care should be taken to keep the losses low in the bias feed and output components. A narrow microstrip line is recommended because DC losses in a bias choke will degrade efficiency and power. While the part is safe under CW operati
12、on, maximum power and reliability will be achieved under pulsed conditions. The data shown in this data sheet is based on a 12.5% duty cycle and a 600 s pulse, unless specified otherwise. The part will operate over a 3.0 V to 5.0 V range. Under nominal conditions, the power at 3.5 V will be greater
13、than +34.5 dBm at +90C. As the voltage is increased, however, the output power will increase. Thus, in a system design, the ALC (Automatic Level Control) Loop will back down the power to the desired level. This must occur during operation, or the device may be dam- aged from too much power dissipati
14、on. At 5.0 V, over +38 dBm may be produced; however, this level of power is not recom- mended, and can cause damage to the device. The HBT breakdown voltage is 20 V, so there are no issue with overvoltage. However, under worst-case conditions, with the RF drive at full power during transmit, and the
15、 output VSWR extremely high, a low load impedance at the collector of the output transistors can cause currents much higher than normal. Due to the bipolar nature of the devices, there is no limitation on the amount of current de device will sink, and the safe current densities could be exceeded. Hi
16、gh current conditions are potentially dangerous to any RF device. High currents lead to high channel temperatures and may force early failures. The RF5110G includes temperature compensation circuits in the bias network to stabilize the RF transis- tors, thus limiting the current through the amplifie
17、r and protecting the devices from damage. The same mechanism works to compensate the currents due to ambient temperature variations. To avoid excessively high currents it is important to control the VAPC when operating at supply voltages higher than 4.0 V, such that the maximum output power is not e
18、xceeded. 10 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Internal Schematic 11 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, con
19、tact RFMD at (+1) 336-678-5570 or sales-. Application Schematic 150 MHz FM Band Application Schematic 220 MHz FM Band 12 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Application Schematic 450
20、 MHz FM Band 13 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Application Schematic 865 MHz and 902 MHz to 928 MHz ISM Bands 14 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, N
21、C 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Application Schematic GSM850 Lumped Element 15 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Evaluatio
22、n Board Schematic GSM900 Lumped Element 16 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Evaluation Board Layout Board Size 2.0” x 2.0” Board Thickness 0.032”; Board Material FR-4; Multi-Layer
23、 17 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Typical Test Setup Notes about testing the RF5110G The test setup shown above includes two attenuators. The 3 dB pad at the input is to minimi
24、ze the effect on the signal genera- tor as a result of switching the input impedance of the PA. When VAPC is switched quickly, the resulting input impedance change can cause the signal generator to vary its output signal, either in output level or in frequency. Instead of an attenuator an isolator m
25、ay also be used. The attenuator at the output is to prevent damage to the spectrum analyzer, and should be sized accordingly to handle the power. It is important not to exceed the rated supply current and output power. When testing the device at higher than nominal supply voltage, the VAPC should be
26、 adjusted to avoid the output power exceeding +36 dBm. During load-pull testing at the output it is important to monitor the forward power through a directional coupler. The forward power should not exceed +36 dBm, and VAPC needs to be adjusted accordingly. This simulates the behavior for the power
27、control loop. To avoid damage, it is recom- mended to set the power supply to limit the current during the burst not to exceed the maximum current rating. 18 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570
28、 or sales-. PCB Design Requirements PCB Surface Finish The PCB surface finish used for RFMDs qualification process is electroless nickel, immersion gold. Typical thickness is 3 inch to 8 inch gold over 180 inch nickel. PCB Land Pattern Recommendation PCB land patterns are based on IPC-SM-782 standar
29、ds when possible. The pad pattern shown has been developed and tested for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly pro- cesses. The PCB land pattern has been developed to accommodate lead and package tolerances. PCB Metal Land Patter
30、n Figure 1. PCB Metal Land Pattern (Top View) 19 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask
31、footprint will match what is shown for the PCB metal land pattern with a 2 mil to 3 mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided
32、 in the master data or requested from the PCB fabrication supplier. Thermal Pad and Via Design The PCB land pattern has been designed with a thermal pad that matches the die paddle size on the bottom of the device. Thermal vias are required in the PCB layout to effectively conduct heat away from the
33、 package. The via pattern has been designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating routing strategies. The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203 mm to 0.330 mm finished hole size on a 0.5 mm
34、 to 1.2 mm grid pattern with 0.025 mm plating on via walls. If micro vias are used in a design, it is suggested that the quantity of vias be increased by a 4:1 ratio to achieve similar results. Figure 2. PCB Solder Mask Pattern (Top View) 20 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensb
35、oro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. 21 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. 22 of 24 RF5110G Rev A7 DS090521 7628 Thorndike
36、 Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-. Application Schematic Small Signal Response 23 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570
37、or sales-. Tape and Reel Information Carrier tape basic dimensions are based on EIA481. The pocket is designed to hold the part for shipping and loading onto SMT manufacturing equipment, while protecting the body and the solder terminals from damaging stresses. The individual pocket design can vary
38、from vendor to vendor, but width and pitch will be consistent. Carrier tape is wound or placed onto a shipping reel either 330 mm (13 inches) in diameter or 178 mm (7 inches) in diameter. The center hub design is large enough to ensure the radius formed by the carrier tape around it does not put unn
39、ecessary stress on the parts. Prior to shipping, moisture sensitive parts (MSL level 2a-5a) are baked and placed into the pockets of the carrier tape. A cover tape is sealed over the top of the entire length of the carrier tape. The reel is sealed in a moisture barrier, ESD bag, which is placed in a
40、 cardboard shipping box. It is important to note that unused moisture sensitive parts need to be resealed in the moisture barrier bag. If the reels exceed the exposure limit and need to be rebaked, most carrier tape and shipping reels are not rated as bakeable at 125C. If baking is required, devices
41、 may be baked according to section 4, table 4-1, column 8 of Joint Industry Standard IPC/JEDEC J-STD-033A. The following table provides useful information for carrier tape and reels used for shipping the devices described in this docu- ment. QFN (Carrier Tape Drawing with Part Orientation) RFMD Part
42、 Number Reel Diameter Inch (mm) Hub Diameter Inch (mm) Width (mm) Pocket Pitch (mm) Feed Units per Reel RF5110GTR77 (178)2.4 (61)124Single2500 24 of 24 RF5110G Rev A7 DS090521 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-.