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1、BRITISH STANDARD BS QC 750005: 1987 IEC 747-3-2: 1986 Specification for Harmonized system of quality assessment for electronic components Semiconductor discrete devices Blank detail specification Voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision refer
2、ence diodes UDC 621.316.722:621.382.2 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750005:1987 BSI 11-1999 ISBN 0 580 35653 1 Amendments issued since publication Amd. No.DateComments Licensed Copy: Lon
3、don South Bank University, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750005:1987 BSI 11-1999i Contents Page National forewordii Introduction1 1Mechanical description2 2Short description2 3Categories of assessed quality2 4Limiting values2 5Elec
4、trical characteristics3 6Marking4 7Ordering information4 8Test conditions and inspection requirements5 9Group D Qualification approval tests9 10Additional information9 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c
5、) BSI BS QC 750005:1987 ii BSI 11-1999 National foreword This Part of BS QC 750005 has been prepared under the direction of the Electronic Components Standards Committee. It is identical with IEC Publication 747-3-2:1986 “Semiconductor devices Discrete devices Part 3: Signal (including switching) an
6、d regulator diodes. Section 2 Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes” published by the International Electrotechnical Commission (IEC). Terminology and conventions. The text of the Internation
7、al Standard has been approved as suitable for publication as a British Standard without deviation. Some terminology and certain conventions are not identical with those used in British Standards. There is no corresponding British Standard for IEC 191, but BS 3934 “Dimensions of semiconductor devices
8、” is a related standard. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Cross-reference
9、International StandardsaCorresponding British Standards IEC 68-2-17:1978BS 2011 Basic environmental testing procedures Part 2.1Q:1981 Tests Q. Sealing (Identical) IEC 747-3:1985BS 6493 Semiconductor devices: discrete devices and integrated circuits Section 1.3:1986 Recommendations for signal (includ
10、ing switching) and regulator diodes (Identical) IEC 747-10/QC 700000:1984BS 9970 Harmonized system of quality assessment for electronic components. Semiconductor devices Part 0:1985 Generic specification (Identical) IEC 747-11/QC 750000:1985BS QC 750000:1986 Harmonized system of quality assessment f
11、or electronic components. Discrete devices. Sectional specification (Identical) IEC 749:1984BS 6493 Semiconductor devices: discrete devices and integrated circuits Part 3:1985 Mechanical and climatic test methods (Identical) a Some standards are undated in the text. Summary of pages This document co
12、mprises a front cover, an inside front cover, pages i and ii, pages 1 to 9 and a back cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Licensed Copy: London South Bank Univers
13、ity, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750005:1987 BSI 11-19991 Introduction The IEC Quality Assessment System for Electronic Components is operated in conformance with the statutes of the IEC and under the authority of the IEC. The ob
14、ject of this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further
15、 testing. This blank detail specification is one of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC publications: Required information Numbers shown in brackets on this and the following page correspond to the following items of required inf
16、ormation, which should be entered in the spaces provided. Identification of the detail specification 1 The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The number and issue number of the generic
17、 and sectional specifications. 4 The national number of the detail specification, date of issue and any further information required by the national system. Identification of the component 5 Type of component. 6 Information on typical construction and applications. If a device is designed to satisfy
18、 several applications, this should be stated here. Characteristics, limits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, a caution statement should be added in the detail specification. 7 Outline drawing and/or reference to the relevant docu
19、ment for outlines. 8 Category of assessed quality. 9 Reference data on the most important properties to permit comparison between component types. 747-10/QC 700000 (1984): Semiconductor Devices, Part 10: Generic Specification for Discrete Devices and Integrated Circuits. 747-11/QC 750000 (1985): Sem
20、iconductor Devices, Part 11: Sectional Specification for Discrete Devices. Throughout this standard, the texts given in square brackets are intended for guidance to the specification writer and should not be included in the detail specification. Throughout this standard, when a characteristic or rat
21、ing applies, “x” denotes that a value shall be inserted in the detail specification. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750005:1987 2 BSI 11-1999 4 Limiting values (absolute maximum rating sy
22、stem) These values apply over the operating temperature range, unless otherwise specified. Repeat only sub-clause numbers used, with title. Any additional values should be given at the appropriate place, but without sub-clause number(s). Curves should preferably be given under Clause 10 of this stan
23、dard. Name (address) of responsible NAI (and possibly of body from which specification is available). e QC 750005 xxx Number of IECQ detail specification. plus issue number and/or date. f ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication 747-10/QC 700000
24、 Sectional specification: Publication 747-11/QC 750000 and national references if different. g National number of detail specification. This box need not be used if national number repeats IECQ number. h DETAIL SPECIFICATION FOR: Type number(s) of the relevant device(s). Ordering information: see Cl
25、ause 7 of this standard. i 1 Mechanical description2 Short description Outline references: IEC 191-2. mandatory if available and/or national if there is no IEC outline. k Voltage-regulator diodes(Reg.) Voltage-reference diodes(Ref.) (excluding temperature-compensated precision reference diodes) Semi
26、conductor material: Si. Encapsulation: cavity or non-cavity. j Outline drawing may be transferred to or given with more details in Clause 10 of this standard. Terminal identification drawing showing pin assignments, including graphical symbols. 3 Categories of assessed quality from Sub-clause 2.6 of
27、 the generic specification. l Marking: letters and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See Sub-clause 2.5 of generic specification and/or Clause 6 of this standard. Polarity indication, if special method is used. Refer
28、ence datam Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 7
29、50005:1987 BSI 11-19993 5 Electrical characteristics (see Clause 8 of this standard for inspection requirements) Repeat only sub-clause numbers used, with title. Any additional characteristics should be given at appropriate place but without sub-clause number. When several devices are defined in the
30、 same detail specification, the relevant values should be given on successive lines, avoiding repeating identical values. Curves should preferably be given under Clause 10 of this standard. Sub-clauseParametersSymbol Value Min.Max. 4.1Operating ambient or case temperaturesTamb/case 4.2Storage temper
31、aturesTstg 4.3Power dissipation: Special requirements for ventilation and mounting should be specified. 4.3.1Maximum power dissipation Ptot as a function of temperature or: 4.3.2Maximum virtual (equivalent) junction temperature.T(vj) and maximum power dissipationPtot 4.4Where appropriate, maximum va
32、lue of forward currentIF 4.5Where appropriate, maximum continuous (direct) reverse currentIZ This should be given in two parts: 4.5.1List, for the given type, of Izmax (corresponding to Ptot) for each Vz voltage, at Tamb or Tcase = 25 C 4.5.2Where appropriate, similar list at Tamb or Tcase = tempera
33、ture specified for the endurance test Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750005:1987 4 BSI 11-1999 6 Marking Any particular information other than given in box k (Clause 1) and/or Sub-clause
34、2.5 of the generic specification shall be given here. 7 Ordering information The following minimum information is necessary to order a specific device, unless otherwise specified: precise type reference (and nominal voltage value, if required); IECQ reference of detail specification with issue numbe
35、r and/or date when relevant; category of assessed quality as defined in Sub-clause 3.7 of sectional specification and, if required, screening sequence as defined in Sub-clause 3.6 of sectional specification; any other particulars. Sub-clause Characteristics and conditions at Tamb or Tcase = 25 C unl
36、ess otherwise specified (see Clause 4 of the generic specification) Symbol Ref.Reg. Tested Min.Max.Min.Max. 5.1Minimum. nominal and maximum values of working voltage at a specified current (continuous (direct) or pulse as specified in the detail specification) (see Sub-clause 2.4 of the generic spec
37、ification) Vz A2b 5.2Maximum reverse current at a voltage specified in the detail specification: between 60 % and 85 % of Vzmin when Vznom 5.6 V preferably between 25 % and 50 % of Vzmin when Vznomu 5.6 V (see page 5) IR1A3 5.3Where appropriate, maximum reverse current at a voltage specified as in 5
38、.2 and at a high temperature IR2 C2b 5.4Maximum differential resistance at the current specified in 5.1 continuous (direct) or pulse as specified in the detail specification rZ A2b 5.5Where appropriate, maximum differential resistance at a recommended minimum operating current rZK C2a 5.6Where appro
39、priate, maximum forward voltage at specified forward current IFVF C2a 5.7Minimum and maximum values of temperature coefficient of working voltage at the current specified in 5.1 and over a specified temperature range avz C2a 5.8Where appropriate, maximum noise voltage at a specified operating curren
40、t, centre frequency and bandwidth Vn C2a 5.9Where appropriate, maximum value of capacitance at specified reverse voltage VRCtot C2a 5.10Where virtual junction temperature is quoted as a rating: maximum value of thermal resistance junction-to-ambient or case or lead with specified clamping distance R
41、th Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750005:1987 BSI 11-19995 8 Test conditions and inspection requirements These are given in the following tables, where the values and exact test condition
42、s to be used shall be specified as required for a given type, and as required by the relevant test in the relevant publication. The choice between alternative tests or test methods shall be made when a detail specification is written. When several devices are included in the same detail specificatio
43、n, the relevant conditions and/or values should be given on successive lines, where possible avoiding repetition of identical conditions and/or values. Throughout the following text, reference to sub-clause numbers is made with respect to the generic specification unless otherwise stated and test me
44、thods are quoted from Clause 4 of the sectional specification. FOR SAMPLING REQUIREMENTS, EITHER REFER TO, OR REPRODUCE, VALUES OF SUB-CLAUSE 3.7 OF SECTIONAL SPECIFICATION, ACCORDING TO APPLICABLE CATEGORY(IES) OF ASSESSED QUALITY. FOR GROUP A, THE CHOICE BETWEEN AQL OR LTPD SYSTEM SHALL BE MADE IN
45、 THE DETAIL SPECIFICATION. GROUP A Lot by lot All tests are non-destructive (3.6.6) Inspection or testSymbolRef. Conditions at Tamb or Tcase = 25 C unless otherwise specified (see Clause 4 of the generic specification) Inspection requirement limits Ref. and Reg. Min.Max. Sub-group A1 External visual
46、 examination 4.2.1.1 Sub-group A2a Inoperative devices Inverted polarity, or VF 10 VF max. or IR 100 IR1 max. unless otherwise specified Sub-group A2b Working voltage VzD-021Current = specified, continuous (direct) or pulse as specified Differential resistancerzD-022Current = the same as for Vz abov
47、e, continuous (direct) or pulse as specified Sub-group A3 Reverse current IR1D-002Voltage = specified in the detail specification: between 60 % and 85 % of Vzmin. when Vznom. 5.6 V preferably between 25 % and 50 % of Vzmin. when Vznom. u 5.6 V (see page 6) NOTEReferences for measuring methods: see s
48、ectional specification 747-11/QC 750000. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:00 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750005:1987 6 BSI 11-1999 Preferred values of reverse voltage VR Voltage VR to be specified in Sub-clause 5.2 and s
49、ub-group A3 for the measurement of IR1 should whenever possible be chosen from the following, where column (*) is preferred: This table is intended for guidance of the specification writer and should not be included in the detail specification. (E24) Vz nom.VR(E24) Vz nom.VR (V) (E24) Vz nom.VR (V) (V)* (V)(V)*(V)* 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 0.6 0.7 0.8 1.0 1.0 1.0 1.0 1.5 1.5 1.5