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1、 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 TRANSISTOR (NPN) FEATURES Power dissipation MARKING: Y11 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V V
2、EBO Emitter-Base Voltage 6 V IC Collector Current -Continuous0.8 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown
3、voltage V(BR)CBO IC= 100A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO*IC=1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 6 V Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A Collector cut-off current ICEO VCE= 20V, IB=0 0.1 A hFE(1) VCE=1V, IC=5mA 45 hFE(2) VCE=
4、1V, IC=100mA 80 300 DC current gain hFE（3） VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V Transition frequency f T VCE=6V, IC= 20mA , f=30MHz 150 MHz * Pulse Test : pulse width 300s , duty cycle 2%. CLASSIFICATION OF hFE(2) Rank L H Range 80-200 200-300 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR