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1、合金法实现ZnO的P型转化文章来源 毕业论文网 全部作者: 张景文 王洪波 侯洵 第1作者单位: 西安交通大学 论文摘要: ZnO films were grown on Sapphire and n-type Silicon, and then deposited a gold film in some areas. After heat treatments in the air through gold alloy technics, they were employed to some electrical measurements. After treatment at the t
2、emperature of 850C, ZnO, grown on sapphire and under gold layer, displayed super high resistivity. It seemed that the ZnO, grown on n-Si and under gold layer, displayed p-type conductivity, for diode-like I-V rectifying characteristics were observed between it and n-Si, and the ZnO layer, which was
3、not deposited gold film. During the course of I-V characteristics measurement, the sample, grown on the n-Si and post treated at 750C, appeared overflow twice, and then was observed stable rectifying characteristic. But the sample post treated at 650C and lower temperature, was not observed rectifying characteristic. Farther experiment researches require to carried out. 关键词: ZnO films, p-type Conversion, Gold Alloy (浏览全文) 发表日期: 2006年11月29日 同行评议: (暂时没有) 综合评价: (暂时没有) 修改稿: