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1、DCY深圳市登辰易科技有限公司AO 3415SOT-23 場效應晶體管(SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsP沟道增强型MOS场效应管 MAXIMUM RATINGS最大額定值Characteristic特性參數Symbol符號Max最大值Un it單位Drain-SourceVoltage 漏極-源極電壓BV DSS-20VGate-SourceVoltage栅極-源極電壓Vgs+8VDrain Current(continuous) 漏極電流-連續Id-4ADrain Current(puls
2、ed) 漏極電流-脉冲I DM-17AESD(HBM)靜電釋放(人體模型)2500VTotal Device Dissipation 總耗散功率Ta = 25C環境溫度爲25 EPd1000mWJunction 結溫Tj150CStorageTemperature 儲存溫度T stg-55to+150cAO 3415 ELECTRICAL CHARACTERISTICS 電特性(Ta=25 °C un less otherwise no ted 如無特殊說明，溫度爲 25 C )Characteristic特性參數Symbol符號Min最小值Typ典型值Max最大值Unit單位Dra
3、in-SourceBreakdow n Voltage 漏極-源極擊穿電壓(Id = -250uA,Vgs=0V)BV DSS-20VGateThresholdVoltage栅極開启電壓(Id = -250uA,Vgs= Vds)VGS(th)-0.3-1VDiode Forward Voltage Drop内附二極管正向壓降(Is=-0.75A,Vgs=0V)Vsd-1.5VZero GateVoltageDrain Current 零栅壓漏極電流(V gs=0V, V ds= -16V) (Vgs=0V, Vds= -16V, Ta=55C)Idss-1 -10uAGate Body Le
4、akage 栅極漏電流(Vgs=+8V, Vds=0V)Igss+10uAStatic Drain-Source On-StateResistanee 静态漏源導通電阻(Id=-4A,Vgs=-4.5V)Rds(on)3543mQStatic Drain-Source On-StateResistanee 静态漏源導通電阻(Id=-3A,Vgs=-2.5V)Rds(on)4554mQStatic Drain-Source On-StateResistanee 静态漏源導通電阻(Id=-2A,Vgs=-1.8V)Rds(on)5673mQIn put Capacita nee 輸入電容 (Vgs=0V, Vds= -10V,f=1MHz)Ciss1450pFOutput Capacitanee輸出電容 (Vgs=0V, Vds= -10V,f=1MHz)Coss205pFTurn-ON Time开启時間(Vds= -10V, Id= -2.8A, Rgen=6q)t(o n)9.5nsTurn-OFFTime关断時間 (Vds= -10V, Id= -2.8A, Rgen=6q)t(off)94nsPulseWidth<300 卩 s; Duty Cycle<2.0%