IRFP460详细资料.doc

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1、0atasheet5佚成电路a询网IRFP460TO-2471/8IRFP460N-CHANNEL 500V - 0.22 Q - 20 A TO-247 PowerMESH MOSFETTYPEVdssRDS(on)IdIRFP460500 V lD(on) X Ros(on)maxVQS= 10 V20ADYNAMICSymbolParameterTest ConditionsMin.Typ.Max.Unitgfs 2)ForwardTransconductanceVDS lD(on) X RDS(on)max Id = 12 A13sCiss Coss CssInput Capacita

2、nce Output Capacitanee Reverse Transfer CapacitanceVds = 25 V f = 1 MHz VGS= 0420050050pF pF pF2/8IRFP460*成申必*诒网OatasheetsELECTRICAL CHARACTERISTICS (continued)SWITCHING ONSymbolParameterTest ConditionsMin.Typ.Max.Unittd(on) trTurn-on Time Rise TimeVdd = 250 V Id = 10 A Rg = 4.7 QVQs = 10 V(see test

3、 circuit, figure 1)3215ns nsQgQgsQgdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeVdd = 400 V lD = 20 A VQs = 10 V1002137130nC nC nCSWITCHING OFFSymbolParameterTest ConditionsMinTyp.Max.Unittr(Voff) tt tcOff-voltage Rise Time Fall TimeCrossover TimeVdd = 400 V Id = 20 A Rg = 4.7 Q Vqs = 10 V

4、 (see test circuit, figure 5)202547nsnsnsSOURCE DRAIN DIODESymbolParameterTest ConditionsMin.Typ.Max.UnitISD lsDM(e)Source-drain Current Source-drain Current (pulsed)2080A AVsD (*)Forward On VoltageIsd = 20 A Vqs = 01.6VtrrQrrIrrmReverse Recovery TimeReverse Recovery ChargeReverse Recovery CurrentIs

5、d = 20 A di/dt = 100 A/gs Vdd = 100 V T)= 150 C (see test circuit, figure 3)700925nsMCA*)ruisea: raise auranon = juu ps. auiy cyae () Pulse width limited by safe operating areaThermal ImpedaneeSafe Operating Area3/8IRFP460*成申必*诒网#/8IRFP460*成申必*诒网10。18 24 es 9 24 6B - 24 atasheet56/8IRFP460*成也必a诒网#/8

6、IRFP460*成也必a诒网Normalized Gate Threshold Voltage vsNormalized On Resista nee vs Temperature#/8IRFP460*成也必a诒网#/8IRFP460*成也必a诒网0.8Vos=vcs Id=250mA、CC79240#/8IRFP460*成也必a诒网#/8IRFP460*成也必a诒网Source-drain Diode Forward CharacteristicsVw(V)1.00.80.60.40.2010203040 Isd(A)7/8Catasheet5佚成电路询网IRFP460Fig. 1: Un

7、clamped Inductive WaveformFig. 1: Un clamped Inductive Load Test CircuitFig. 3: Switching Times Test Circuits For Resistive LoadUCLAMPLO IKIDUCIIVE WAVE-OUSFig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times8/8OatasheetsIRFP460笫成申.侪a诒网TO-247 MECHANICAL DATADIM.mminchMIN.TYP.MA

8、X.MIN.TYP.MAX.A4.75.30.1850.209D2.22.60.0870.102E0.40.80.0160.031F11.40.0390.055F322.40.0790.094F433.40.1180.134G10.90.429H15.315.90.6020.626L19.720.30.7760.779L314.214.80.5590.4130.582L434.61.362L55.50.217M230.0790.118Dla3.553.650.1400.1449/8Catasheet5佚成电路a询网IRFP460Information furnished Is believed

9、 to be accurate and reliable However. STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any Infringement of patents or other rights of third parties which may result from Its use. No license Is granted by Implication or otherwise under any patent or

10、 patent rights of STMicroelectronics Specification mentioned In this publication are subject to change without notice This publication supersedes and replaces all Informatlon previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or

11、systems without express written approval of STMicroelectronics.The ST logo is a registered trademark o STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia Brazil - Canada China France - Germany Italy Japan Koroa Malaysia Malta Mexico Morocco - The Nethorland* Singapore Spain Sweden Switzerland Taiwan - Thailand United Kingdom U.S.A.10/8

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