功率半导体的工作原理.pdf

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1、N Lis s v M? !“#$% ? !“#$? !“#$% 0 ? !“# ?i S = 0 ? !“# ? !“#$% 0 ? !“# ?v S = 0 ? !“# ? 0.3 ? !“#$%67 ? !“ ? ? !“#$% ; di s Vs 0 dt d 0 ? !“#$% VGS(th) VDS -VF0 (z.B. -0,2 V) b) - - - - - - - - - - - - + + - + VGS VGS(th) VDS VCE1 VGG- QG- a) b) Ciss Coss Crss C nF 100 10 1 0,1 VCE V 010203040 a) b

2、) w w w . b z f x w . c o m MOSFET IGBT 1) 2) 3) 4) 5)13 6)5 7) IGBT 8) 100?m NPT 600 IGBT 164 MOSFET IGBT S-FET MOSFET 5 216 MOSFET IGBT 1.14 n- p+n+ p C w w w . b z f x w . c o m MOSFET IGBT p 1.15 30% MOSFET IGBT IGBT p p n- n IEGT Injection Enhanced Gate Transistors4.5 6.5kV 194 MOSFET 1998 Cool

3、MOS 216 1.16 CoolMOS MOSFET p w w w . b z f x w . c o m n+ SiO2 p+ Al n p+ n- n+ n- n a)b) n+ SiO2 p+ Al n p+ n- n+ n- n p p p p p p n MOSFET RDS(on) 1.2.1 2.4 2.6 V(BR)DS 600V CoolMOS MOSFET 1/5 1/3 35% 1/3 216 SiC SiC 10 SiC 1/3001000V SiC SiC 3 500 2.5V SiC 282 124 130 a)b) w w w . b z f x w . c

4、o m SMARTPOWER 277 213 232 MOSFET IGBT SENSFET Sense- IGBT Sense- IGBT IPM TEMPFET PROFET HITFET 4 277 PROFET 60V MOSFET HITFET 3V 232 1A/600V 2A 5A/75V( 30A/1200V 2002 150A) 600V w w w . b z f x w . c o m VR IR 25C 1200V 1.5V/K VR IR VF V I IF 125C 150C w w w . b z f x w . c o m V VFRM VF 0,1VF tfr

5、 1,1VF t VF VFRM 1.18 VFRM tfr IGBT 1. di/dt 1700V VFRM 200V 300V VF 100 2. VFRM VFRM 1200V IGBT VFRM w w w . b z f x w . c o m VFRM 1.19 LK VK S D IL S IL VK LK S 1.20 1.20 1.21 1.20 w w w . b z f x w . c o m IRRM VM V,I 0 dl/dt dlr /dt 0.2 IRRM tw trr tirm ts tf t0 V t dI/dt (1.1) t0 tw pn tirm IR

6、RM tirm trr t0 IRRM 20% trr tf ts 1.20 (1.2) 1.21a 1.21b 1.21b tf ts s = tf ts _dI = VK dt LK w w w . b z f x w . c o m 0,2 IRRM tstf 0,2 IRRM tstf b)a) (1.3) 10% 200% 1.21b dIr/dt (1.4) VM = VK + Vind VK dI/dt 1. 2. 3. dI/dt dI/dt dI/dt 1.19 (1.2) (1.3) 1.22 dI dt dIr dt S = I = 0 max _ ? ? Vind =

7、LK max ? ? dIr dt w w w . b z f x w . c o m LL R Goff IL R Gon L ?1 V K + - L?2 L?3 I V dI/dt VK IGBT 1.23 IGBT IGBT IGBT IGBT IGBT IGBT 1.24 1.24a IGBT 1.24b I(t) I(t) IGBT t V(t) t t w w w . b z f x w . c o m IGBT 1.24a 1200V IGBT 1. dIr/dt dIr/dt dI/dt IRRM Eoff I 150A V 1200V I RRM Diode P=V*I P

8、=V*I 0 150A I RRM 0 0 -1200V P :10 5 W/div P :10 5 W/div SKM 200 GB 173 D SKM 200 GB 173 D 200ns/div 200ns/div 0 0 I V T = 125C T = 125C Eon b) a) w w w . b z f x w . c o m 2. Trr IGBT IGBT IGBT 1.24b 1.24a IGBT IGBT IRRM L ?ges 40nH IGBT (1.5) VCE(t) IGBT 1500A/?s V(t) VK 700 750 800 850 900 950 10

9、00 110 100 A Vmax V VK = 800 V dI/dt = 1200 A/s Tj = 150C CAL V(t) = VK L?ges + VCE(t) dIR dt w w w . b z f x w . c o m 1.25 p CAL75A CAL 10% 100V IGBT CAL 50C +150C 6000A/?s 50nH 100V 1.24b IGBT IGBT dV/dt IGBT IGBT MOSFET w w w . b z f x w . c o m Vd/2 Vd/2 Vout iIGTB1 iIGTB2iDiode2 iL Vd/2 V, iVo

10、ut(1) Vout iL -Vd/2 IGBT T2 IGBT T1 Diode D2 Diode D1 iDiode1 1.26 1. vout iL 0 IGBT1 2. vout iL 0 2 3. vout iL 2mV/K 1. 2. 2mV/K w w w . b z f x w . c o m MOSFET IGBT 1.6 Al2O3 AlN BeO Si3N4 DCB Direct Copper Bonding AMB Active Metal Brazing IMS Insulated Metal Substrate Multilayer-IMS TFC Thick Fi

11、lm Copper DCB 1.42 IGBT DCB w w w . b z f x w . c o m C1G1E2 E2 C2,E1E1 G2 G1E1 E2 G2 2 1 C2 E1E2 3 C1 DCB 0.380.63 1000C 300 DCB 3mm 1.42 SEMITOP SKiiPPACK MiniSKiiP DCB 1.5 w w w . b z f x w . c o m DCB AMB AMB DCB AlN AMB 1.43 DCB AMB DCB AMB / IMS IMS 1.44 w w w . b z f x w . c o m DCB IMS 1.4.2

12、.6 TFC DCB 1.45 TFC 15 10 w w w . b z f x w . c o m 1.6 IGBT 1.46 1.46 MOSFET w w w . b z f x w . c o m a)b)c)d) e)f)g)h) i)j)k)l) m)n)o) p)q) r) w w w . b z f x w . c o m SEMIKRON 1.4.4 IGBT MOSFET 1.5 SKiiPPACK MiniSKiiP SEMITOP 1.47 R Z 1.47 RC Rth w w w . b z f x w . c o m . . . 1 2 3 4 5 6 7 8

13、9 Ptot RthSi ZthSi Tj RthSo1 ZthSo1 RthCu1 ZthCu1 RthIso ZthIso RthSo2 ZthSo2 RthBa ZthBa RthTc ZthTc Rthha Zthha RthCu2 ZthCu2 TC Ta R = R + R + R + R + R + R + R + R thjhthSithSo1thCu1thlsothCu2thSo2thBathTc Z = Z + Z + Z + Z + Z + Z + Z + Z thjhthSithSo1thCu1thlsothCu2thSo2thBathTc Rthjc1 Zthjc1

14、Rthch1 Zthch1 Rthjcn . . . Zthjcn TC Th Rthchn . . . Zthchn Rthha Zthha Ta RthjhZthjh, w w w . b z f x w . c o m . . . Ptot R thSi Z thSi Tj R thSo1 Z thSo1 R thCu1 Z thCu1 R thIso Z thIso R thTc Z thTc R thha Z thha R thCu2 Z thCu2 Ta Th R = R + R + R + R + R + R thjhthSithSo1thCu1thlsothCu2thTc Z

15、= Z + Z + Z + Z + Z + Z thjhthSithSo1thCu1thlsothCu2thTc 1 2 3 4 5 8 9 Rthjh1 Zthjh1 Rthjhn . . . Zthjhn Rthha Zthha Ta Tj Ptot ?T jh = Tj - Th Tj Th Rthjh Zthjh 1.47 1.48 Rthjh Zthjh 1. 2. DCB 3. 4. 5. 6. 7. w w w . b z f x w . c o m Rthch Zthch Rthjc Zthjc Rthjh = Rthjc + Rthch Zthjh = Zthjc + Zth

16、ch 1.48 Rthjc Al2O3DCB IMS 56% 6% 8% 10% 20% Al2O3 Cu Si 82% 2%3% 2% 11% Cu Si 20%50% ? = 24W/m*K DCB 96%99% Al2O3 AlN ? = 150W/m*K AlN Cu ? = 393W/m*K 2.54.5mm DCB 1.49 a)b) w w w . b z f x w . c o m DCB a) b) c) ? = 75 W/m*K 50% Cu ? = 393W/ m*K 194 6.5mm*6.5mm Al2O3 15% w w w . b z f x w . c o m

17、1.50 Rthjc IMS; K=0,65 DCB (Al O ); K=0,76 DCB (AIN) ; K=0,96 23 10 1 0,1 0,01 10 100 1000Amm Ch 2 RK/W thjc AlN Rthjc Ach Rthjc Ach ? = 0.8W/m*K Rthch Rthch Rthjh w w w . b z f x w . c o m 0 0,05 0,1 0,15 0,2 0,25 0,3 020406080100120140 Rthca K/W ACh mm2 d= 50 m 30 m 20 m 10 m 5 m 1.51 30?m 50 IGBT

18、 30% 9mm*9mm 30mm2IMS 150mm2 Al2O3 194 Al2O3 a = 0.58 Ach 1.52 ? w w w . b z f x w . c o m 0,0001 0,001 0,01 0,1 1 1,00E-051,00E-041,00E-031,00E-021,00E-011,00E+00 1,00E+01 56 mm2 81 mm2 121 mm2 t s Zthjc K/W Zthjc1(t)/Zthjc2(t) = Rthjc1/Rthjc2 = (ACh2/ACh1)K K 1.50 194 IGBT 2.59 1.53 w w w . b z f

19、x w . c o m 13kV 6kV 7kV7kV Al2O3 AlN d= mm 0,380,630,120,025 3kHz 1. 2. 3. 4. Al2O3 AlN 2.7 3.2.3 1.54a IGBT w w w . b z f x w . c o m c) 0 5 10 15 20 25 30 Al2O3AlNAlCuSAlSiC 75%SiC i 10-6 /K a) b) T-Tkk L/LT-Tkk K1E-6/KK L/L 1E-6/K 69,74,10,8662,64,10,77 55,48,348,37,81,13 40,517,52,13 1,38 0,000

20、,501,001,502,002,500,000,501,001,502,002,50 3 x 3 mm 2 3 x 3 mm 2 L m L m L m L m 34mm 0,38mm-AI2O3 / SKiiP 0,38mm-AI2O3 w w w . b z f x w . c o m d) T-Tkk L/L T-Tkk L/LT-TkkL/L K1E-6/KK1E-6/KK1E-6/K 53,44,10,6661,84,10,7650,84,10,62 46,65,70,8055,25,70,9444,25,70,76 38,117,52,0042,770,90 0,000,501,

21、001,502,000,000,501,001,502,000,000,501,001,502,00 3 x 3 mm 2 3 x 3 mm 2 L mL mL m L m L m L m 34mm 0,63mm-AIN / Cu 34mm 0,63mm-AIN / AISiC SKiiP 0,63mm-AIN 1.54 AlSiC 1.5.4 206 1.54 AlN AlN Al2O3 SKiiP MiniSKiiP SEMITOP 1.5 w w w . b z f x w . c o m 1. AlN Al2O3 2. 150200C 4.7ppm/K 23ppm/K 304 DCB

22、DCB ?T?100K IGBT 1.55 w w w . b z f x w . c o m TOP BOTTOM LC LEC LE LG LG LCE = LC + LEC + LE ? ? ? ? dI/dt 3.4.1 MOSFET IGBT 193 w w w . b z f x w . c o m 0 20 40 60 80 100 120 140 Al2O3 AlN pF/cm2 d=0.38mm d=0.63mm d=0.12mm d=0.025mm 15kJ 20kJ 196 iE = CE*dvCE/dt CE IGBT dvCE/dt EN50178 0.15% 1%

23、1.56 CE AlN 630?m IMS 120?m 25?m w w w . b z f x w . c o m BeO UL 17 MOSFET IGBT 1.57 SKiiPPACK MiniSKiiP GBGALGARGDGDL GA GBGALGAR Sixpack: GDGDL w w w . b z f x w . c o m 2.8mm 6.3mm 2.8mm SEMITOP ECONOPACK 100A SEMIKRON MOSFET IGBT SEMITOP SKiM 4SKiM 5 w w w . b z f x w . c o m MOSFET MOSFET PROE

24、LECTRON SEMIKRON MOSFET IGBT SEMITRANS SK M 1 5 1 A F R CSK M 120 B 020 SEMIKRON SEMIKRON MOS MOS 1 (Tcase = 25C ID/A) 2 () 3 4 H 6 0 VDS = 50 V5 VDS = 500 V 1 VDS = 100 V8 VDS = 800 V 2 VDS = 200 V9 VDS = 1000 V 4 VDS = 400 V 0 4-5 1 6 2 2 3 4 4+4 A F R C 1996 IGBTSEMITRANS SK M 100 G B 12 3 D L SE

25、MIKRON A B () D M MOSFET (VDS/V/10) w w w . b z f x w . c o m MMOS D IGBT (Tcase = 25C IC/A) IGBT A AL(IGBT ) AR(IGBT ) AHH AX IGBT AY IGBT B BD D DL AL H M IGBT (VCE/V/100) IGBT 01988-1991 Tcase = 80C 1 21992-1996 Tcase = 25C 600V Tcase = 80C 3600V 1200V NPT IGBT 1700V NPT IGBTCAL 600V Tcase = 80C

26、1200V 1700V Tcase = 25C 4 NPT IGBT 1200V 1700V 5 NPT IGBT 600V 1200V 6 NPT IGBT D KSEMITRANS L S I SEMITOP SEMIKRON SEMITOP MOSFET IGBT SEMITOP w w w . b z f x w . c o m SK 100 G B 12 3 x SEMIKRON (A Th = 25C) GIGBT MMOSFET A AL (IGBT MOSFET ) AR (IGBT MOSFET ) AHH B D H (VCE/V/100 VDS/V/100) IGBT 2

27、PT IGBT 600V 3 NPT IGBT 4 NPT IGBT 5 NPT IGBT SEMITOP IGBT 1. 2. 3. 4. 5. 6. w w w . b z f x w . c o m SK 100 G B 12 3 x SEMIKRON (A Th = 25C) GIGBT MMOSFET A AL (IGBT MOSFET ) AR (IGBT MOSFET ) AHH B D H (VCE/V/100 VDS/V/100) IGBT 2PT IGBT 600V 3 NPT IGBT 4 NPT IGBT 5 NPT IGBT SEMITOP IGBT 1. 2. 3.

28、 4. 5. 6. w w w . b z f x w . c o m SKiiPPACK IGBT DCB DCB SKiiPPACK SKiiPPACK IGBT SKiiPPACK SKiiPPACK 2 3 4 GB GAL GAR 600V 1200V 1700VH 3300V SKiiPPACK 1.59 SKiiPPACK 1.58 SKiiPPACK (Semikron integrated intelligent Power Pack) w w w . b z f x w . c o m UVW - +- + a) b)c) DCB PTC SKiiPPACK IGBT SK

29、iiPPACK 1.6 3.5.8 SKiiPPACK 1. 2.DCB 3. 4. w w w . b z f x w . c o m 5. 6. 7. 1.60 SKiiPPACK SKiiPPACK SEMIKRON MiniSKiiP 1.61 w w w . b z f x w . c o m 5. 6. 7. 1.60 SKiiPPACK SKiiPPACK SEMIKRON MiniSKiiP 1.61 w w w . b z f x w . c o m MiniSKiiP 1. DCB IGBT MOSFET 2. DCB 3. MiniSKiiP MiniSKiiP Mini

30、SKiiP DCB DCB MiniSKiiP 10 MiniSKiiP 1 230V 12 MiniSKiiP 8 400V 125 1.62 w w w . b z f x w . c o m MiniSKiiP MiniSKiiP 8 1.63 MiniSKiiP Case M 1 MiniSKiiP Case M 2 MiniSKiiP Case M 3 MiniSKiiP Case M 8a; Case M 8M 8aM 8 w w w . b z f x w . c o m MiniSKiiP 8 SEMITOP 1.57 SKiiPACK MiniSKiiP SEMITOP DC

31、B MiniSKiiP SEMITOP 12 SEMITOP SEMITOP MiniSKiiP w w w . b z f x w . c o m MiniSKiiP 8 SEMITOP 1.57 SKiiPACK MiniSKiiP SEMITOP DCB MiniSKiiP SEMITOP 12 SEMITOP SEMITOP MiniSKiiP w w w . b z f x w . c o m IGBT 1.2.4 IGBT VCE TEMPFET 1.2.4 PTC DCB 281 IGBT IGBT IGBT IPM280 IPM IGBT IPM IPM SKiiPPACK S

32、EMIKRON 1.5.1 SKiiPPACK 1.58 CMOS TTL SKiiPPACK SKiiPPACK w w w . b z f x w . c o m 1.65 OCP 3.5.8 SKiiPPACK OFF Iu analog OUT Iv analog OUT Iw analog OUT OCP - driver U V W w w w . b z f x w . c o m w w w . b z f x w . c o m 264265 VCE F R VCGR S R V X V(BR)DSVGE(th) VCEsat (BR) SAT (th) clamp VGGV

33、CCVDD IGE ICIDIG F R w w w . b z f x w . c o m IGES S R V X AV RMS M R S puls (on)(off) DIN40 900 T5 DIN 41 781 DIN 41 785 T3 DIN 41 858 IEC 191-1.4 IEC 50 (521) 1984 (551) 1982 IEC 617-5 IEC 971 (1989-07) DIN 41 791 T1 DIN 41 792 T2 T3 IEC 747-1: 1983 w w w . b z f x w . c o m IEC 747-2: 1983 A1(19

34、92) A2(1993) IEC 747-8: 1983 A1(1991) A2(1993) IEC 60747-9: 1998 FDISIGBT IEC 664-1: 19921000V IEC 146-1-1: 1991/EN60146-1-1: 1993 DIN EN50178 (VDE0160): 4/1998 IEC 947-4-2/EN60947-4-2: 1997 UL 1557: 5/1993 UL 94-V0: 9/1981 IEC 747-1, IX: 1983 ESD DIN IEC 68-2-. ISO 9001/EN29001: 1995 DIN EN ISO 900

35、1: 8/1994 25C 25C w w w . b z f x w . c o m 25C 125C MOSFET VDS MOSFET Tcase = 25C VDGR RGS Tcase = 25C ID Tcase = 25C80C ID25CID80C IDM IDpuls tpTcase = 25C 80C EAS iD VDD RGS L Tj = 25C VGSS VGS Tcase = 25C Ptot PD Ptot = (Tjmax-Tcase)/Rthjc Tcase = 25C w w w . b z f x w . c o m 25C 125C MOSFET VD

36、S MOSFET Tcase = 25C VDGR RGS Tcase = 25C ID Tcase = 25C80C ID25CID80C IDM IDpuls tpTcase = 25C 80C EAS iD VDD RGS L Tj = 25C VGSS VGS Tcase = 25C Ptot PD Ptot = (Tjmax-Tcase)/Rthjc Tcase = 25C w w w . b z f x w . c o m Tvj Tj Tj(min) -Tj(max) TstgTstg(min) -Tstg(max) Visol Vis 11 IEC146-1-1(1991) E

37、N60146-1-1(1993) 4.2.1 VDE0558 1-1 (1993-04 DIN VDE 0160 (1988-05) 7.6 EN50178(1994) / E VDE 0160(1994-11) DIN 40040 DIN IEC 68-1 IF Tcase = 25C80C IFM IFpuls tp Tcase = 25C80C MOSFET V(BR)DSS VGS = 0 ID Tcase = 25C VGS(th) VDS = VGS ID Tcase = 25C w w w . b z f x w . c o m IDSS VGS = 0 VDS = VDSS T

38、j = 25C125C IGSS VDS = 0 VGS VGS Tcase = 25C RDS(on) VGS ID MOSFET VDS ID VDS ID VDS(on) = RDS(on) * ID VGS ID Tcase = 25C RDS(on) gfs ID VDS ID Tcase = 25C CCHC Tcase = 25C Ciss VGS = 0 VDS f Tcase = 25C Coss VGS = 0 VDS f Tcase = 25C Crss, Cmi VGS = 0 VDS f Tcase = 25C w w w . b z f x w . c o m LD

39、S MOSFET 2.1a 2.1b 1.2.3 RG VGS 0 VGS VDS RL VDD ID + VDS VGS 10% 90% 10%10% 90% 90% 10% t t tf td t off off tr t on t d on a) b) w w w . b z f x w . c o m VDD VGS ID RG RGS Tcase = 25C td(on) VGG VGS VGS(th) VDS ID VGS 10% VDS (VDD) 90% td(on) tr tr (VDD) 90% 10% td(on) tr ton ton VDS VDS(on) = RDS

40、(on) * ID VDD 10% ton td(off) VGG VGS MOSFET RGS gfs = diD/dvGS VGS (VGG) 90% VDD10% td(off) tf 10% 90% td(off) toff toff ID 10% toff w w w . b z f x w . c o m MOSFET Rthjc Rthjc MOSFET jc MOSFET ?T jc = Tj - Tcase = P * Rthjc MOSFET Rthch Rthch ch MOSFET MOSFET ?T ch = Tcase - Th = Pn * Rthch. SEMI

41、TOP SKiiPPACK MiniSKiiP Rthjc Rthch MOSFET Rthjh M1 Nm lb.in. M2 Nm lb.in. wg a m*s-2 VSD, VF VGS = 0 VSD MOSFET MOSFET IF Tcase = 25C V(TO) rT trr diF/dt VR = VDD w w w . b z f x w . c o m -ID = IF MOSFET trr 25C 150C IF VR-diF/dt Tj = 25C 150C Qrr diF/dt VR = VDD -ID = IF MOSFET Qrr 25C 150C IF VR

42、-diF/dt Tj = 25C 150C MOSFET MOSFET PD Tcase Tcase = 25C MOSFET PD(25C) = (Tjmax - 25C)/Rthjc w w w . b z f x w . c o m SOA 1.2.3 MOSFET SOA SOA 1. 2. 3. 2.3 4. 2.3 MOSFET ID = f(VDS) Tc = 25C MOSFET Tj = 150C Ptot MOSFET 103 A 102 101 ID 100 100VDS101102V103 ID = f(VDS) VGS 2.4 MOSFET 1.2.2.1 w w w

43、 . b z f x w . c o m 400 A 300 200 100 ID 0 0VDS246810V12 400 A 300 200 100 ID 0 0VDS1234V5 PD = 700 W VGS = 2010 8 7 6,5 6 5,5 5 4,5 4 V ID = f(VGS) 2.5MOSFET VDS = 25V ID = gfs * (VGSVGS(th) 2.6 w w w . b z f x w . c o m 2.6 2.6 MOSFET V(BR)DSS Tj = 25C 25C MOSFET 3.3.1 1.2.3 1.2.3 1.2.1 2.7 MOSFE

44、T RDS(on) ID VGS w w w . b z f x w . c o m 98% typ. 2% VDS= VGS ID= 1 mA M11114 RDS(on) 2.8 MOSFET VGS(th) Tj M21413 VGS = 5V5.5 V6 V7 V8 V 20 V15 V10 V 9 V w w w . b z f x w . c o m Tj VGS(th) -50 +150 -10 mV/K MOSFET 3.2 IGBT VCES VCE VGE = 0 Tcase = 25C VCGR RGE Tcase = 25C IC Tcase = 25C80C IC25

45、CIC80C ICM ICpuls tp Tcase = 25C80C VGES VGE Tcase = 25C Ptot Ptot = (Tjmax-Tcase)/Rthjc Tcase = 25C Tvj Tj Tj(min) -Tj(max) Tstg Tstg(min) -Tstg(max) w w w . b z f x w . c o m 2 Datenblattangaben fr MOSFET-, IGBT-, MiniSKiiP- und SKiiPPACK-Module 104 2.2.3 Diagramme Der Reihenfolge in den Datenbltt

46、ern folgend, enthlt dieses Kapitel einige Hinweise zu den im Datensatz von MOSFET-Modulen enthaltenen Diagrammen. Wird das betreffende Diagramm in anderen Kapiteln noch detaillierter erklrt, erfolgt ein Verweis dorthin. Hchstzulssige Gesamtverlustleistung PD eines MOSFET-Modules als Funktion der Geh

47、usetemperatur Tcase Bild 2.2Hchstzulssige Gesamtverlustleistung Ausgehend von der definitionsgem bei Tcase = 25C als Grenzwert aufgefhrten, hchstzuls- sigen Verlustleistung PD(25C) = (Tjmax 25C)/Rthjc je MOSFET, wird deren Derating bei hheren Gehusetemperaturen durch die im Diagramm dargestellte Fun

48、ktion beschrieben. Hchstzulssiger sicherer Arbeitsbereich im Pulsbetrieb (SOA) Wie im Kap. 1.2.3 dargestellt, mu der MOSFET beim harten Schalten einen nahezu rechtecki- gen Arbeitspunktverlauf i= f(u) zwischen VDD und IL realisieren. Inwieweit er dies in den verschiedenen Betriebszustnden ohne Zerstrungsgefahr kann, wird in den SOA- (Safe Operating Area-) Diagrammen beschrieben: Die SOA-Begrenzungen sind: - hchstzulssiger Drainstrom (waagerechte Begrenzung); - hchstzulssige