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1、BRITISH STANDARD BS 9364 N011: 1978 Incorporating Amendment No. 1 Detail specification for low power silicon p-n-p switching transistors 65 V, planer epitaxial, ambient rated, hermetic encapsulation Full plus additional assessment level UDC 621.316.5:621.318.57:621.382.3 Licensed Copy: London South
2、Bank University, London South Bank University, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 BSI 12-1999 ISBN 0 580 10312 9 A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for the
3、ir correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, pages i and ii, pages 1 to 7 and a back cover. This standard has been updated (see copyright date) and
4、may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Amendments issued since publication Amd. No.Date of issueComments 3581April 1981Indicated by a sideline in the margin Licensed Copy: London South Bank University, London South Bank Universi
5、ty, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 BSI 12-1999i Contents Page 1Limiting conditions of use1 2Characteristics2 3Marking and terminal identification2 4Related documents2 5Ordering information2 6Inspection requirements3 Figure 1 Derating curve6 Figure 2
6、Curve of minimum hFE versus IC at VCE= 0.4 V7 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI ii blank Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 03:59:25 GMT+00:00 20
7、06, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 BSI 12-19991 1 Limiting conditions of use (not for inspection purposes) Absolute maximum values ELECTRONIC COMPONENTS OF ASSESSED QUALITY DETAIL SPECIFICATION IN ACCORDANCE WITH BS 9300:1969 MANUFACTURERS TYPE NUMBER CV9507 For ordering information se
8、e clause 5Outline and dimensions. Third angle projection LOW POWER SWITCHING TRANSISTOR P-N-P 65 V SILICON PLANAR EPITAXIAL AMBIENT RATED HERMETIC ENCAPSULATION The collector is electrically connected to the envelope All dimensions in mm For detail dimensions see BS 3934 S0-134A Marking information
9、see clause 3 FULL ASSESSMENT LEVEL PLUS ADDITIONAL REQUIREMENTS VCBCollector-base voltage65 V VCEOCollector-emitter voltage with base open circuit65 V VEBEmitter-base voltage5 V ICCollector current600 mA IBBase current100 mA Refer to Qualified Products List 9002 for details of manufacturers approved
10、 to this specification. PtotTotal power dissipation at an ambient temperature of 25 C (see derating curve, Figure 1) 500 mW TambOperating ambient temperature range 55 C to + 175 C TstgStorage temperature range 55 C to + 175 C Licensed Copy: London South Bank University, London South Bank University,
11、 Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 2 BSI 12-1999 2 Characteristics (not for inspection purposes) (at Tamb= 25 C unless otherwise stated) 3 Marking and terminal identification 1) Terminal identification (see outline on page 1). 2) Marking. Each transisto
12、r shall bear the following marking: a) the type number, i.e. CV9507; b) the factory identification code (see 1.1.6.3 of BS 9300); c) the date code. Each package containing one or more of these transistors shall bear all the above markings and in addition: d) the number of this detail specification,
13、i.e. BS 9364 N011, Issue 1. 4 Related documents BS 3934, Dimensions of semiconductor devices. BS 6001, Sampling procedures and tables for inspection by attributes. BS 9000, General requirements for electronic components of assessed quality. BS 9300, Semiconductor devices of assessed quality: Generic
14、 data and methods of test. PD 9002, BS 9000 component selection guide. 5 Ordering information Orders for this transistor shall contain the following minimum information: . . . (Qty). Transistor type CV9507 to BS 9364 N011, Issue 1, dated July 1978. ICBO(1)Collector-base cut-off currentVCB= 50 V75 nA
15、 max. ICBO(2)Collector-base cut-off currentVCB= 50 V Tamb 100 C 1 4A max. IEBO(1)Emitter-base cut-off currentVEB= 3 V100 nA max. IEBO(2)Emitter-base cut-off currentVEB= 5 V10 4A max. VCEO(sus)Collector-emitter sustaining voltage (Tamb= 55 C to + 175 C) IC= 10 mA65 V min. VBE (sat)(1)Base-emitter sat
16、uration voltageIC= 30 mA IB= 1 mA 0.9 V max. VBE(sat)(2)Base-emitter saturation voltageIC= 150 mA IB= 15 mA 1.3 V max. hFE(1)Static forward current transfer ratioIC= 10 mA VCE= 0.4 V 50 min. 200 max. hFE(3)Static forward current transfer ratioIC= 1 mA VCE= 0.4 V 40 min. hFE(4)Static forward current
17、transfer ratioIC= 50 mA VCE= 0.4 V 20 min. hFE(5)Static forward current transfer ratioIC= 150 mA VCE= 0.4 V 10 min. fTTransition frequencyVCE= 10 V IC= 50 mA f = 20 MHz 50 MHz min. CoboOutput capacitanceVCB= 10 V f = 1 MHz 12 pF max. tSStorage timeIC= 100 mA250 ns max. IB1= IB2= 10 mA Licensed Copy:
18、 London South Bank University, London South Bank University, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 BSI 12-19993 6 Inspection requirements All tests shall be made at Tamb= 25 C unless otherwise stated (see 1.2.4.1.5 of BS 9300). Samples submitted to tests ma
19、rked (D), shall not be accepted for release under BS 9000 (see 2.6.5 of BS 9000-1). InspectionBS 9300:1969 reference and conditions of testSymbol Limits Unit Min.Max. Group A Subgroup A1 Visual inspection Subgroup A5 not applicable Inspection level I, AQL 1.5 % 1.2.2.1 Subgroup A2Inspection level II
20、, AQL 0.65 % Collector-emitter sustaining voltage Collector-base cut-off current Static forward current transfer ratio 3002 3001 3011 IC= 10 mA VCB= 50 V IE= 0 IC= 10 mA VCE= 0.4 V VCEO(sus) ICBO(1) hFE(1) 65 50 75 200 V nA Subgroup A3Inspection level I, AQL 2.5 % Emitter-base cut-off current Base-e
21、mitter Static forward current transfer ratio 3001 1008 3011 VEB= 3 V IC= 30 mA IB= 1 mA IC= 150 mA VCE= 0.4 V IEBO(1) VBE(sat)(1) hFE(5)10 100 0.9 nA V Subgroup A4Inspection level S-4, AQL 4.0 % Static forward current transfer ratio Storage time 3011 3301 IC= 1 mA VCE= 0.4 V IC= 100 mA IB1= IB2= 10
22、mA R1= 910 7 R2= 1 300 7 R3= 36 7 Vin= + 20 V hFE(3) ts 40 250ns Emitter-base cut-off current 3001 Min. pulse length = 1 4s Max. pulse rise time = 10 ns Max. duty cycle = 1 % VBB= 15 V VCC = 4 V C1= 0.47 4F VEB= 5 VIEBO(2)104A Licensed Copy: London South Bank University, London South Bank University
23、, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 4 BSI 12-1999 InspectionBS 9300:1969 reference and conditions of testSymbol Limits Unit Min.Max. Group BSubgroups B4, B5, and B6 not applicable Subgroup B1Inspection level S-2, AQL 6.5 % Dimension1.2.3BS 3934 S0-134AD
24、 A 8.64 6.10 9.39 6.60 mm mm Subgroup B2(a)Inspection level S-4, AQL 4.0 % Solderability (D) (see note 1) 1.2.6.10(see note 2) Subgroup B2(b)Inspection level S-4, AQL 4.0 % Rapid change of temperature followed by Damp heat, cyclic (D) 1.2.6.7 1.2.6.3 55 C to 175 C Six cycles Subgroup B3Inspection le
25、vel S-4, AQL 6.5 % Lead fatigue (D)1.2.6.11.1 Subgroup B7Inspection level S-4, AQL 1.5 % Electrical endurance1.2.7.6.1Duration 160 h minimum Post-test end-points for subgroups B2(b) and B7 Static forward current transfer ratio Collector-base cut-off current 3011 3001 IC= 10 mA VCE= 0.4 V VCB= 50 V,
26、IE= 0 hFE(1) ICBO(1) 45220 100nA Subgroup B8 CTR information1.1.11Attribute information for subgroups B2 (a), B2 (b), B3 and B7 Group CSubgroup C4 not applicable Subgroup C1Inspection level S-2, AQL 6.5 % Dimensions1.2.3BS 3934 S0-134AB2 L 0.41 12.5 0.48 14.5 mm mm Subgroup C2(a)Inspection level S-4
27、, AQL 4.0 % Transition frequency3206VCE= 10 V IC= 50 mA f = 20 MHz fT50MHz Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 BSI 12-19995 InspectionBS 9300:1969 reference and conditions of testS
28、ymbol Limits Unit Min.Max. Subgroup C2(b)Inspection level I, AQL 4.0 % Collector-base cut-off current Base-emitter saturation voltage Static forward current transfer ratio Output capacitance 3001 3008 3011 3013 VCB= 50 V Tamb= 100 C IC= 150 mA, IB= 15 mA IC= 50 mA VCE= 0.4 V VCB= 10 V ICBO(2) VBE(sa
29、t)(2) hFE(4) Cobo 20 1.0 1.3 12 4A V pF Subgroup C3Inspection level S2, AQL 6.5 % Vibration, swept frequency followed by Acceleration steady state 1.2.6.5 1.2.6.6 f = 150 Hz to 2 000 Hz acceleration = 196 m/s2 Acceleration = 196 km/s2 along the axis, leads inwards Subgroup C5Inspection level S3, AQL
30、 4.0 % Electrical endurance1.2.7.6.1Duration 2 000 h minimum Post-test end-points for subgroups C3 and C5 Static forward current transfer ratio Collector-base cut-off current 3011 3001 IC= 10 mA VCE= 0.4 V VCB= 50 V, IE= 0 hFE(1) ICBO(1) 40240 150nA Subgroup C6 CTR information1.1.11Attributes inform
31、ation for subgroups C2 (a) and C3 Measurements information for hFE (1) and ICBO(1) before and after the tests in subgroup C5 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 6 BSI 12-1999 Inspe
32、ctionBS 9300:1969 reference and conditions of testSymbol Limits Unit Min.Max. Group DSubgroups D2 and D3 not applicable Subgroup D1Inspection level S-2 (see note 3) Dimensions1.2.3BS 3934 S0-134Aa B1 B3 D1 F h j k L1 L2 8.01 0.15 0.71 0.74 6.35 5.08 TP 1.01 0.53 8.50 2.03 1.01 0.86 1.06 1.27 mm mm m
33、m mm mm mm mm mm mm mm !45 TPdegrees Subgroup D4Inspection level S-3 (see note 4) Electrical endurance 1.2.7.6.1Duration 8 000 h minimum Subgroup D5 CTR information1.1.11Measurements information for hFE(1) and ICBO(1) before and after the test in subgroup D4 NOTE 1This test is destructive only when
34、the lead finish is materially altered by the solderability test. NOTE 2When method 1.2.6.10.2 is used, the inspection level shall be reduced to S-3. NOTE 3For the purpose of qualification approval, subgroup D1 has an AQL of 6.5 % (see 1.1.10 and 1.1.14 of BS 9300). NOTE 4This test is for information
35、 only, the results being recorded in the CTR. Figure 1 Derating curve Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011:1978 BSI 12-19997 NOTEPoints marked T are subject to inspection. Figure 2 Curve
36、 of minimum hFE versus IC at VCE= 0.4 V Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 03:59:25 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N011: 1978 BSI 389 Chiswick High Road London W4 4AL BSI British Standards Institution BSI is the independent natio
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