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1、BRITISH STANDARD BS EN 150012:1993 Incorporating Amendment No. 2 Specification for Harmonized system of quality assessment for electronic components Blank detail specification Single gate field-effect transistors The European Standard EN 150012:1991 has the status of a British Standard Licensed Copy
2、: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS EN 150012:1993 BSI 04-2000 ISBN 0 580 35829 1 Amendments issued since publication Amd. No.Date of issueComments 7593February 1993Indicated by a sideline in the margin Licensed Copy: sheffieldun sheffield
3、un, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS EN 150012:1993 BSI 04-2000i Contents Page National forewordii Forewordiii Text of CECC 500121 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS EN 150012:1993 ii BSI
4、04-2000 National foreword This British Standard has been prepared under the direction of the Electronic Components Standard Committee. It is identical with CENELEC Electronic Components Committee (CECC) CECC 50012 “Harmonized system of quality assessment for electronic components. Blank detail speci
5、fication: Single gate field-effect transistors”. This standard is a harmonized specification within the CECC system. In 1991 the CENELEC Electronics Components Committee (CECC) accepted CECC 50012:1980 as European Standard EN 150012:1991. It is recognized that the layout proposed herein cannot be ap
6、plied to all detail specifications based on this document. For instance, it may be preferable to indicate the limiting values in the form of a table when several similar devices appear in the same detail specification. Terminology and conventions. The text of the CECC specification has been approved
7、 as suitable for publication, without deviation, as a British Standard. Some terminology and certain conventions are not identical with those used in British Standards; attention is especially drawn to the following. The comma has been used throughout as a decimal marker. In British Standards it is
8、current practice to use a full point on the baseline as the decimal marker. Cross-references. The British Standard harmonized with CECC 00100 is BS 9000 “General requirements for electronic components of assessed quality”. The following International Standards are referred to in the text and for eac
9、h there is a corresponding British Standard; these are as listed below: Scope This standard lists the ratings, characteristics and inspection requirements which shall be included as mandatory requirements in accordance with BS CECC 50000 in any detail specification for these devices. Detail specific
10、ation layout In the event of conflict between the requirements of this specification and the provisions of section 3 of BS 9000-2 the latter shall take precedence except the front page layout shall be in accordance with BS 9000 Circular letter no. 15 dated August 1977. A British Standard does not pu
11、rport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. International StandardCorresponding British Standard IEC 191-2BS 3934 D
12、imensions of semiconductor devices (Technically equivalent) CECC 50000BS CECC 50000 Harmonized system of quality assessment for electronic components: Generic specification: Discrete semiconductor devices (Identical) Summary of pages This document comprises a front cover, an inside front cover, page
13、s i and ii, the EN title page, page 2, the CECC title page, pages ii to iv, pages 1 to 58 and a back cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Licensed Copy: sheffieldu
14、n sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM EN 150012 December 1991 UDC: Descriptors: Quality, electronic components, transistors English version Blank Detail Specification: Single gate field-effect transistors S
15、pcification Particulire Cadre: Transistors effet du champ grille unique Vordruck fr Bauartspezifikation: Feldeffekt-Transistoren mit einer Gate-Elektrode This European Standard was approved by the CENELEC Electronic Components Committee (CECC) on 25 November 1991. The text of this standard consists
16、of the text of CECC 50012 Issue 2 1980 of the corresponding CECC Specification. CENELEC members are bound to comply with CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bi
17、bliographical references concerning such national standards may be obtained on application to the General Secretariat of the CECC or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under th
18、e responsibility of a CENELEC member into its own language and notified to the CECC General Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Italy,
19、Luxembourg, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland, and United Kingdom. The membership of the CECC is identical, with the exception of the national electrotechnical committees of Greece, Iceland and Luxembourg. CECC European Committee for Electrotechnical Standardization Comit Eur
20、open de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B-1050 Brussels 1991 Copyright reserved to CENELEC members Ref. No. EN 150012:1991 E Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncont
21、rolled Copy, (c) BSI 2 blank Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 150012:1991 ii BSI 04-2000 Contents Page Forewordiii S
22、ection 1. Low frequency amplification 1Mechanical description2 2Electrical application2 3Levels of quality assessment2 4Limiting values2 5Characteristics3 6Test conditions and inspection requirements4 Section 2. High frequency amplification 1Mechanical description12 2Electrical application12 3Levels
23、 of quality assessment12 4Limiting values12 5Characteristics13 6Test conditions and inspection requirements14 Section 3. Switching applications 1Mechanical description22 2Electrical application22 3Levels of quality assessment22 4Limiting values22 5Characteristics23 6Test conditions and inspection re
24、quirements24 Section 4. Chopper applications 1Mechanical description32 2Electrical application32 3Levels of quality assessment32 4Limiting values32 5Characteristics33 6Test conditions and inspection requirements34 Section 5. Voltage-controlled resistor (VCR) applications 1Mechanical description41 2E
25、lectrical application41 3Levels of quality assessment41 4Limiting values41 5Characteristics42 6Test conditions and inspection requirements43 Section 6. Low level d.c. amplifier applications 1Mechanical description50 2Electrical application50 3Levels of quality assessment50 4Limiting values50 5Charac
26、teristics51 6Test conditions and inspection requirements52 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 150012:1991 BSI 04-2000iii Foreword The CENELEC Electronic Components Committee (CECC) is composed of those member countries of the
27、 European Committee for Electrotechnical Standardization (CENELEC) who wish to take part in a harmonized System for electronic components of assessed quality. The object of the System is to facilitate international trade by the harmonization of specifications and quality assessment procedures for el
28、ectronic components, and by the grant of an internationally recognized Mark, or Certificate, of Conformity. The components produced under the System are thereby accepted by all member countries without further testing. This document has been formally approved by the CECC, and has been prepared for t
29、hose countries taking part in the System who wish to issue detail specifications for FIELD-EFFECT TRANSISTORS. It should be read in conjunction with document CECC 00100: Basic Rules (1974). At the date of printing of this document the member countries of the CECC are Belgium, Denmark, France, German
30、y, Ireland, Italy, the Netherlands, Norway, Sweden, Switzerland and the United Kingdom. Copies of this document can be obtained from the National Committees of the CENELEC in these countries. Preface This blank detail specification was prepared by CECC Working Group 5: “Semiconductor diodes and tran
31、sistors”. It is one of a series of blank detail specifications for discrete semiconductor devices, all relating to the generic specification printed as CECC 50000. The text of this specification was circulated to the CECC for voting in documents CECC (Secretariat) 463 and 584 in December 1975 and Fe
32、bruary 1977 respectively, and was ratified by the CECC for printing as a CECC Specification. It is recognized that the layout proposed cannot be applied to all detail specifications based on this document. For instance, it may be preferable to indicate the limiting values in the form of a table when
33、 several similar devices appear in the same detail specification. Contents This blank detail specification is divided according to uses in a number of sections, as indicated hereafter. Each section is complete in itself in that all common parts have been repeated (e.g. limiting values). Section 1.Lo
34、w frequency amplificationpage 1 Section 2.High frequency amplificationpage 11 Section 3.Switchingpage 21 Section 4.Chopperpage 31 Section 5.Voltage-controlled resistorpage 40 Section 6.Low level d. c. amplificationpage 49 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006
35、, Uncontrolled Copy, (c) BSI iv blank Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 150012:1991 BSI 04-20001 Section 1. Low frequency amplification Numbers between square brackets on the next page correspond to the following indications
36、 which should be given: Identification of the detail specification 1 The name of National Standards Organization under whose authority the detail specification is drafted 2 The CECC Symbol and the number allotted by the CECC General Secretariat to the completed detail specification 3 The number and
37、issue number of the national generic and sectional specifications 4 The national number of the detail specification, date of issue and any further information required by the national system. Identification of the component 5 A short description of the type of component 6 Information on typical cons
38、truction (where applicable) 7 Outline drawing and/or reference to the relevant document for outlines 8 Application or group of applications covered (see note below) 9 Reference data on the most important properties, to allow comparison between the various component types. NOTEWhen a device is so des
39、igned that it can satisfy several applications, this should be stated in the detail specification, in which case the characteristic and inspection requirements relevant to these applications should be met simultaneously (these may appear in different columns of a blank detail specification or in dif
40、ferent blank detail specifications, as the case may be). Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 150012:1991 2 BSI 04-2000 1 page:CECC 500122 of:Section 1 LF AMPLIFICATION ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WIT
41、H: 34 DETAIL SPECIFICATION FOR: SINGLE GATE FIELD-EFFECT TRANSISTOR (S) TYPE-NUMBER (S): 5 CONSTRUCTION: Polarity: N-channel/P-channel Device categories : Type A: junction-gate-type Type B: insulated-gate depletion type Type C: insulated-gate enhancement type Case material:glass/metal/plastic/other6
42、 1 Mechanical description 72 Electrical application 8 Outline references (code A) from IEC 191-2: National:power:AMBIENT-RATED ORfrequency: LOW Base and case references (codes B + C) from IEC 191-2:use: AMPLIFICATION National: AND/OR Outline drawing 3 Levels of quality assessment TERMINAL CONNECTION
43、S: including any connections between terminals, case and substrate, if necessary F L MARKING: letters and figures or colour code 4Limiting values (absolute maximum system) COMMON TO ALL APPLICATIONS9 These apply over the operating temperature range, unless otherwise statedTypes ABC 4.1Minimum and ma
44、ximum ambient operating temperaturesTambmax min xxx 4.2Minimum and maximum storage temperaturesTstgmax min xxx 4.3Maximum drain-source voltage under specified conditionsVDSX) ) ) ) ) ) (or VDSSmaxxxx (or VDSR 4.4Maximum gate-source voltage (with VDS = 0), reverse and, where appropriate, forward VGSR
45、 VGSF max max x x (x) x (x) 4.5Maximum gate-drain voltage with source open-circuitedVGDOmaxxxx 4.6Maximum forward gate currentIGFmaxx 4.7Maximum drain currentIDmaxxxx See the relevant Qualified Products List for the availability of components qualified under this detail specification. Licensed Copy:
46、 sheffieldun sheffieldun, na, Fri Nov 17 08:18:40 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 150012:1991 BSI 04-20003 Types ABC 4.8Power dissipation: Special requirements for ventilation/mounting should be specified 4.8.1Maximum total power dissipation as a function of temperature or: Ptot maxvs
47、Txxx 4.8.2Maximum virtual (equivalent) junction temperature and absolute limit of power dissipation T(Vj) Ptot ) ) ) ) maxx x x x x x 4.9For insulated-gate devices with separate source and substrate terminals: (In general devices that include gate-protection diodes do not require this to be specifie
48、d) 4.9.1Maximum gate-substrate voltage under specified conditionsVGB(VGU) maxxx 4.9.2Maximum drain-substrate voltage under specified conditionsVDB(VDU) maxxx 4.9.3Maximum source-substrate voltage under specified conditionsVSB(VSU)maxxx 5Characteristics (See 6 for inspection) The characteristics mark
49、ed x shall be given at Tamb = 25 C unless otherwise stated. Sign + indicates characteristic is verified under the inspection requirements. Types Signs between brackets correspond to characteristics indicated “where appropriate”, or given as alternatives. ABC 5.1Leakage or cut-off currents: Either: maximum leakage or cut-off current with source open-circuited, preferably at maximum rated gate-drain voltage VGDO IGDO (1)(x) (x) (x) or: maximum leakage or cut-off current with drain short-circuited to source, preferab