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1、BRITISH STANDARD BS EN 60747-16-4: 2004 Semiconductor devices Part 16-4: Microwave integrated circuits Switches The European Standard EN 60747-16-4:2004 has the status of a British Standard ICS 31.080.99 ? Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 17:03:26 GMT+00:00 2006, Uncontrolled C
2、opy, (c) BSI BS EN 60747-16-4:2004 This British Standard was published under the authority of the Standards Policy and Strategy Committee on 8 November 2004 BSI 8 November 2004 ISBN 0 580 44730 8 National foreword This British Standard is the official English language version of EN 60747-16-4:2004.
3、It is identical with IEC 60747-16-4:2004. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The Brit
4、ish Standards which implement international or European publications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Onl
5、ine. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsi
6、ble European committee any enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title
7、page, pages 2 to 30, an inside back cover and a back cover. The BSI copyright notice displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. DateComments Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 17:03:26 GMT+00:00 2006, Uncon
8、trolled Copy, (c) BSI EUROPEAN STANDARD EN 60747-16-4 NORME EUROPENNE EUROPISCHE NORM September 2004 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 3
9、5, B - 1050 Brussels 2004 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-16-4:2004 E ICS 31.080.99 English version Semiconductor devices Part 16-4: Microwave integrated circuits Switches (IEC 60747-16-4:2004) Dispositifs se
10、miconducteurs Partie 16-4 : Circuits intgrs hyperfrquences Commutateurs (CEI 60747-16-4:2004) Halbleiterbauelemente Teil 16-4: Integrierte Mikrowellenschaltkreise Schalter (IEC 60747-16-4:2004) This European Standard was approved by CENELEC on 2004-09-01. CENELEC members are bound to comply with the
11、 CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or
12、 to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the offici
13、al versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia
14、, Spain, Sweden, Switzerland and United Kingdom. Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 17:03:26 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 64707-61-42:400 - - 2 Foreword The text of document 47E/256/FDIS, future edition 1 of IEC 60747-16-4, prepared by SC 47E, Discrete semiconduc
15、tor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60747-16-4 on 2004-09-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national sta
16、ndard or by endorsement (dop) 2005-06-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2007-09-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 60747-16-4:2004 was approved by CENELEC as a European
17、 Standard without any modification. In the official version, for Bibliography, the following note has to be added for the standard indicated: IEC 60747-16-1 NOTE Harmonized as EN 60747-16-1:2002 (not modified). _ Page 2 EN 60747164:2004 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 17:03:26
18、 GMT+00:00 2006, Uncontrolled Copy, (c) BSI 2 067-7416-4 CEI :0240(E) CONTENTS 1 Scope.6 2 Normative references .6 3 Terms and definitions .6 4 Essential ratings and characteristics.8 4.1 Circuit identification and types.8 4.1.1 Designation and types .8 4.1.2 General function description 8 4.1.3 Man
19、ufacturing technology8 4.1.4 Package identification8 4.1.5 Main application 9 4.2 Application description 9 4.2.1 Conformance to system and/or interface information .9 4.2.2 Overall block diagram9 4.2.3 Reference data9 4.2.4 Electrical compatibility.9 4.2.5 Associated devices9 4.3 Specification of t
20、he function 9 4.3.1 Detailed block diagram Functional blocks .9 4.3.2 Identification and function of terminals.10 4.3.3 Function description 11 4.3.4 Family related characteristics 11 4.4 Limiting values (absolute maximum rating system) 11 4.4.1 Electrical limiting values 11 4.4.2 Temperatures 12 4.
21、5 Operating conditions (within the specified operating temperature range) .12 4.5.1 Power supplies Positive and/or negative values12 4.5.2 Initialization sequences (where appropriate)12 4.5.3 Input voltage(s) (where appropriate)12 4.5.4 Output current(s) (where appropriate)12 4.5.5 Voltage and/or cu
22、rrent of other terminal(s) 12 4.5.6 External elements (where appropriate) 12 4.5.7 Operating temperature range.12 4.6 Electrical characteristics12 4.7 Mechanical and environmental ratings, characteristics and data13 4.8 Additional information13 4.8.1 Equivalent input and output circuit.13 4.8.2 Inte
23、rnal protection .13 4.8.3 Capacitors at terminals13 4.8.4 Thermal resistance13 4.8.5 Interconnections to other types of circuit .13 4.8.6 Effects of externally connected component(s)14 4.8.7 Recommendations for any associated device(s) 14 4.8.8 Handling precautions.14 4.8.9 Application data.14 4.8.1
24、0 Other application information.14 4.8.11 Date of issue of the data sheet 14 Page 3 EN 60747164:2004 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 17:03:26 GMT+00:00 2006, Uncontrolled Copy, (c) BSI 067-7416-4 IEC:0240(E) 3 5 Measuring methods 14 5.1 General.14 5.1.1 General precautions 14
25、5.1.2 Characteristic impedances.14 5.1.3 Handling precautions.14 5.1.4 Types 14 5.2 Insertion loss (Lins)15 5.2.1 Purpose.15 5.2.2 Circuit diagram 15 5.2.3 Principle of measurement 15 5.2.4 Circuit description and requirements16 5.2.5 Precautions to be observed .16 5.2.6 Measurement procedure16 5.2.
26、7 Specified conditions 16 5.3 Isolation (Liso) .17 5.3.1 Purpose.17 5.3.2 Circuit diagram 17 5.3.3 Principle of measurement 17 5.3.4 Circuit description and requirements17 5.3.5 Precautions to be observed .18 5.3.6 Measurement procedure18 5.3.7 Specified conditions 18 5.4 Return loss (Lret) .19 5.4.
27、1 Purpose.19 5.4.2 Circuit diagram 19 5.4.3 Principle of measurement 19 5.4.4 Circuit description and requirements19 5.4.5 Precautions to be observed .20 5.4.6 Measurement procedure20 5.4.7 Specified conditions 20 5.5 Input power at 1 dB compression (Pi(1dB) and output power at 1 dB compression (Po(
28、1dB)21 5.5.1 Purpose.21 5.5.2 Circuit diagram 21 5.5.3 Principle of measurement 21 5.5.4 Circuit description and requirements21 5.5.5 Precaution to be observed.21 5.5.6 Measurement procedure21 5.5.7 Specified conditions 21 5.6 Turn-on time (ton), turn-off time (toff), rise time (tr(out), and fall ti
29、me (tf(out).22 5.6.1 Purpose.22 5.6.2 Circuit diagram 22 5.6.3 Principle of measurement 22 5.6.4 Circuit description and requirements23 5.6.5 Precautions to be observed .23 5.6.6 Measurement procedure23 5.6.7 Specified conditions 23 5.7 Adjacent channel power ratio (Po(mod) /Padj) 24 5.7.1 Purpose.2
30、4 Page 4 EN 60747164:2004 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 17:03:26 GMT+00:00 2006, Uncontrolled Copy, (c) BSI 4 067-7416-4 CEI :0240(E) 5.7.2 Circuit diagram 24 5.7.3 Principle of measurements 24 5.7.4 Circuit description and requirement .25 5.7.5 Precautions to be observed .2
31、5 5.7.6 Measurement procedure25 5.7.7 Specified conditions 26 5.8 n-th order harmonic distortion ratio (Pnth /P1).27 5.8.1 Purpose.27 5.8.2 Circuit diagram 27 5.8.3 Principle of measurements 27 5.8.4 Circuit description and requirements27 5.8.5 Measurement procedure28 5.8.6 Specified conditions 28 F
32、igure 1 Circuit diagram for the measurement of the insertion loss Lins15 Figure 2 Circuit diagram for the measurement of the isolation Liso .17 Figure 3 Circuit for the measurements of the return loss 19 Figure 4 Circuit for the measurements of switching time 22 Figure 5 Input and output waveforms .
33、22 Figure 6 Circuit for the measurement of the adjacent channel power ratio24 Figure 7 Circuit diagram for the n-th order harmonic distortion ratio.27 Page 5 EN 60747164:2004 Bibliography . AnnexZ A( nroma)evitroN mevitar efercnese ot tniertannoia lbupcilatoisn wit hthrie corresdnopiE gnuroepap nubl
34、icatsnoi . 3 4 60747-1-64 IEC:0204(E) 5.7.2 Circuit diagram 24 5.7.3 Principlo ef measuremenst 24 5.7.4 Circuit decsriptiona nd requirement .25 5.7.5 Precuatiosn to be observde .25 5.7.6 Measuremtne procedure25 5.7.7 Specifie dconditiosn 26 5.8 n-hto redrh armoincd irotstino rati o(Pnt h/P1).27 5.8.
35、1 Purpose.27 5.8.2 Circuit diagram 27 5.8.3 Principlo ef measuremenst 27 5.8.4 Circuit decsriptiona nd requirements27 5.8.5 Measuremtne procedure28 5.8.6 Specifie dconditiosn 28 Fiugre 1 riC cuid tiargam for th emesarumeneo tf thi ensretinosol s Lins15 Fiugre2 riCcui tdiargamf ort hm eesarumene toft
36、 h eisolatoi nLiso .17 Figure 3 Circui tfor th emeasuremstne of the return loss 19 Figure 4 Circui tfor th emeasuremstne of switching time 22 Figure 5 I npu tand outptu waveforms .22 Figur6 e Circuif tor eht measuremnet of tha edjcaetn chalenn powre raito24 Figure 7 Circuit diagram for th en-ht orde
37、r harmonci disotrtino ratio.27 Pa5 eg E4002:46174706 N iBbliography 30 Annex ZA (normative) Normative references to international publications with their corresponding European publications . 29 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 17:03:26 GMT+00:00 2006, Uncontrolled Copy, (c) BS
38、I 067-7416-4 IEC:0240(E) 5 SEMICONDUCTOR DEVICES Part 16-4: Microwave integrated circuits Switches 1 Scope This part of IEC 60747 provides new measuring methods, terminology and letter symbols, as well as essential ratings and characteristics for integrated circuit microwave switches. There are many
39、 combinations for RF ports in switches, such as SPST (single pole single throw), SPDT (single pole double throw), SP3T (single pole triple throw), DPDT (double pole double throw), etc. Switches in this standard are based on SPDT. However, this standard is applicable to the other types of switches. 2
40、 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60617-12, Graphical sym
41、bols for diagrams Part 12: Binary logic elements IEC 60617-13, Graphical symbols for diagrams Part 13: Analogue elements IEC 60747-1(1983), Semiconductor devices Discrete devices and integrated circuits Part 1: General Amendment 3 (1996) IEC 60747-4, Semiconductor devices Discrete devices Part 4: Mi
42、crowave devices IEC 60748-2, Semiconductor devices Integrated circuits Part 2: Digital integrated circuits IEC 60748-3, Semiconductor devices Integrated circuits Part 3: Analogue integrated circuits IEC 60748-4, Semiconductor devices Integrated circuits Part 4: Interface integrated circuits 3 Terms
43、and definitions For the purposes of this document, the following terms and definitions apply. Terms related to electrical characteristics 3.1 insertion loss Lins ratio of the output power at the switched on port to the input power in the linear region of the power transfer curve Po (dBm) = f(Pi) NOT
44、E 1 In this region, Po (dBm) = Pi (dBm). NOTE 2 Usually the insertion loss is expressed in decibels. Page 6 EN 60747164:2004 Licensed Copy: sheffieldun sheffieldun, na, Fri Nov 10 17:03:26 GMT+00:00 2006, Uncontrolled Copy, (c) BSI 6 067-7416-4 CEI :0240(E) 3.2 isolation Liso ratio of the output pow
45、er at the switched off port to the input power in the linear region of the power transfer curve Po (dBm) = f(Pi) NOTE 1 In this region, Po (dBm) = Pi (dBm). NOTE 2 Usually the isolation is expressed in decibels. 3.3 return loss Lret ratio of the incident power Pinc at the specified port to the refle
46、cted power Pref at the same port in the linear region of the power transfer curve Pref (dBm) = f(Pinc) NOTE 1 In this region, Pref (dBm) = Pinc (dBm). NOTE 2 Usually the return loss is expressed in decibels. 3.4 input power at 1 dB compression Pi(1 dB) input power where the insertion loss increases
47、by 1 dB compared with insertion loss in linear region 3.5 output power at 1 dB compression Po(1dB) output power where the insertion loss increases by 1 dB compared with insertion loss in linear region 3.6 turn on time ton interval between the lower reference point on the leading edge of the control
48、voltage and the upper reference point on the leading edge of the envelope of the output voltage in the linear region of the power transfer curve Po (dBm) = f(Pi) NOTE In this region, Po (dBm) = Pi (dBm). 3.7 turn off time toff interval between the upper reference point on the trailing edge of the co
49、ntrol voltage and the lower reference point on the trailing edge of the envelope of the output voltage in the linear region of the power transfer curve Po (dBm) = f(Pi) NOTE In this region, Po (dBm) = Pi (dBm). 3.8 rise time tr(out) interval between the lower reference point on the leading edge of the output voltage and the upper reference point on th