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1、BRITISH STANDARD BS IEC 60747-5-4:2006 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers ICS 31.080.01; 31.260 ? Licensed Copy: London South Bank University, London South Bank University, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI BS IEC
2、 60747-5-4:2006 This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 June 2006 BSI 2006 ISBN 0 580 48819 5 National foreword This British Standard reproduces verbatim IEC 60747-5-4:2006 and implements it as the UK national standard. The UK part
3、icipation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors, which has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which implement international publicati
4、ons referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include all the necessa
5、ry provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on the interpr
6、etation, or proposals for change, and keep UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the IEC title page, pages 2 to 28, an inside back cover and a back c
7、over. The BSI copyright notice displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. DateComments Licensed Copy: London South Bank University, London South Bank University, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI C
8、EI IEC INTERNATIONAL STANDARD 60747-5-4 First edition 2006-02 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers Reference number CEI/IEC 60747-5-4:2006 BS IEC 60747-5-4:2006 Licensed Copy: London South Bank University, London South Bank University, Thu Mar
9、01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI CONTENTS 1 Scope14H3 2 Normative references.15H3 3 General . 4 3.1 Physical concepts. 4 3.3 General terms. 4 3.4 Terms related to ratings and characteristics 5 4 Essential rating and characteristics 9 4.1 Type. 9 4.2 Semiconductor . 9 4.3 Detail
10、s of outline drawing and encapsulation. 9 4.4 Limiting values (absolute maximum ratings) 10 4.5 Electrical and optical characteristics . 10 4.6 Supplementary information Temperature dependence of wavelength 12 5.1 Power measurement. 12 5.2 Output power stability . 12 5.3 Time domain profile 14 5.4 L
11、ifetime 17 5.5 Optical characteristics of the laser beam. 18 Annex A (informative) Reference list of technical terms and definitions related to spatial profile and spectral characteristics 22 Annex B (informative) Reference list of measurement methods related to spatial profile and spectral characte
12、ristics 26 Annex C (informative) Reference list of technical terms and definitions, and measurement methods, related to power measurement and lifetime . 27 Bibliography. 28 0HFigure 1 Device with window but without lens 5 1HFigure 2 Switching times. 6 2HFigure 3a Derivative threshold current of a la
13、ser diode 7 3HFigure 3b Extrapolated threshold current of a laser diode 8 4HFigure 4 Basic circuit diagram . 12 5HFigure 5 Basic circuits diagram . 14 6HFigure 6 Typical pulse response diagram 16 7HFigure 7 Basic circuit diagram . 17 8HFigure 8 Half-intensity angle 18 9HFigure 9 Relationship between
14、 the specified plane and the mechanical reference plane. 19 10HFigure 10 Basic measurement setup diagram 19 11HFigure 11. 20 12HTable 1 Electrical and optical chracteristics. 10 BS IEC 60747-5-4:2006 2 5Measurement methods. 12 Licensed Copy: London South Bank University, London South Bank University
15、, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 5-4: Optoelectronic devices Semiconductor laser 1 Scope This part of IEC 60747 deals with the terminology, the essential ratings and characteristics as well as the measuring methods of semico
16、nductor lasers. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references the latest edition of the reference document (including any amendments) applies. IEC 62007-1,
17、 Semiconductor optoelectric devices for fibre optic system applications Part 1: Essential ratings and characteristics IEC 62007-2, Semiconductor optoelectric devices for fibre optic system applications Part 2: Measuring methods ISO 11145, Optics and optical instruments Lasers and laser related equip
18、ment Vocabulary and symbols ISO 11146-1, Lasers and laser-related equipment Test methods for laser beam widths, divergence angles and beam propagation ratios Part 1: Stigmatic and simple astigmatic beams ISO 11146-2, Lasers and laser-related equipment Test methods for laser beam widths, divergence a
19、ngles and beam propagation ratios Part 2: General astigmatic beams ISO 11146-3, Lasers and laser-related equipment Test methods for laser beam widths, divergence angles and beam propagation ratios Part 3: Intrinsic and geometrical laser beam classification, propagation and details of test methods IS
20、O 11554, Optics and optical instruments Lasers and laser-related equipment Test methods for laser beam power, energy and temporal characteristics ISO 11670, Lasers and laser-related equipment Test methods for laser beam parameters - Beam positional stability ISO 12005, Lasers and laser-related equip
21、ment Test methods for laser beam parameters Polarization ISO 13694, Optics and optical instruments Lasers and laser-related equipment Test methods for laser beam power (energy) density distribution ISO 13695, Optics and photonics Laser and laser-related equipment Test methods for the spectral charac
22、teristics of lasers ISO 17526, Optics and optical instruments Lasers and laser related equipment Lifetime of lasers BS IEC 60747-5-4:2006 3 Licensed Copy: London South Bank University, London South Bank University, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI 3 Terms and definition
23、s For the purpose of this document, the following terms and definitions apply. 3.1 Physical concepts a) (Electromagnetic) radiation (IEV 845-01-01) b) Optical radiation (see IEV 845-01-02) c) Visible radiation (IEV 845-01-03) NOTE There are no precise limits for the spectral range of visible radiati
24、on since they depend upon the amount of output power available and the responsivity of the observer. The lower limit is generally taken between 360 nm and 400 nm and the upper limit between 760 nm and 830 nm. d) Infrared radiation (see IEV 845-01-04, specialized) e) Ultraviolet radiation (see IEV 84
25、5-01-05, specialized) f) Light (IEV 845-01-06, without Note 2 which is not relevant) Perceived light (IEV 845-02-17) Visible radiation (IEV 845-01-03) 3.2 Types of devices Semiconductor laser (laser diode) Semiconductor diode that emits coherent optical radiation through stimulated emission resultin
26、g from the recombination of free electrons and holes when an electric current exceeds the threshold current of the diode. NOTE The laser diode chip is mounted on a submount or in a package with or without coupling means (e.g. lens, fibre pigtail). 3.3 General terms 3.3.1 beam axis (see ISO 11145) 3.
27、3.2 optical port geometrical configuration, referenced to an external plane or surface of the device, that is used to specify the optical radiation emitted from an emitting device. NOTE The geometrical configuration should be specified by the manufacturer by means of geometrical information, e.g: lo
28、cation, shape and size of the area of emission, angle of emission or acceptance, other parameters, e.g. numerical aperture of optical fibre, orientation of beam axis. Example: Signification of annotations in the figure: = acceptance angle or emission angle D = optical port with diameter D Ref. = ref
29、erence locus for the definition of the optical port BS IEC 60747-5-4:2006 4 Licensed Copy: London South Bank University, London South Bank University, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI Packaged devices y z x D Package outline Ref.: Package outline IEC 203/06 Figure 1 Dev
30、ice with window but without lens 3.4 Terms related to ratings and characteristics 3.4.1 switching times NOTE The specified lower and upper limit values referred to in 3.4.1.1 to 3.4.1.6 are usually 10 % and 90 % of the amplitude of the pulses (see Figure 3). 3.4.1.1 rise time tr (see ISO 11554) 3.4.
31、1.2 fall time tf (see ISO 11554) NOTE In the most recent edition of ISO 11554, there is no definition regarding fall time. For the time being, the descriptions of Figure 2 should be referred to until the complete version of fall time definition is fixed in ISO 11554. 3.4.1.3 turn-on delay time td(on
32、) time interval between the instant the electrical input signal reaches a specified level (10 % unless otherwise stated) and the instant the optical output signal reaches a specifies level (10 % of the steady-state maximum unless otherwise stated) 3.4.1.4 turn-on time ton time interval between the i
33、nstant the electrical input signal reaches a specified level (10 % unless otherwise stated) and the instant the optical output signal reaches a specified level (90 % of the steady-state maximum unless otherwise stated) ton = td(on) + tr BS IEC 60747-5-4:2006 5 Licensed Copy: London South Bank Univer
34、sity, London South Bank University, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI 3.4.1.5 turn-off delay time td(off) time interval between the instant the electrical input signal downs a specified level (90 % unless otherwise stated) and the instant the optical output signal downs
35、a specifies level (90 % of the steady-state maximum unless otherwise stated) 3.4.1.6 turn-off time toff time interval between the instant the electrical input signal downs a specified level (90 % unless otherwise stated) and the instant the optical output signal downs a specified level (10 % of the
36、steady-state maximum unless otherwise stated). toff = td(off) + tf 100 % Upper specified value Lower specified value td(on) Upper specified value Lower specified value Optical output signal waveform Electrical input signal waveform ton tr td(off) tf toff t t 100 % IEC 204/06 NOTE Lower and upper spe
37、cified values indicate 10 % and 90 %, respectively, unless other wise stated. Figure 2 Switching times BS IEC 60747-5-4:2006 6 Licensed Copy: London South Bank University, London South Bank University, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI 3.4.2 output power P (see ISO 13694
38、) 3.4.3 differential output (radiant) power efficiency d output power efficiency for small-signal modulation: d = dP / dIF NOTE 1 Dimension of d is W/A. NOTE 2 The term “small-signal modulation efficacy“ is used as a synonym. NOTE 3 Differential output power quantum efficiency = q/h ed is also appli
39、cable, where q is the electron charge, is the optical frequency, h is equal 6,62 x 10-34 Js (Plancks constant). 3.4.4 threshold current (of a semiconductor laser) ITH forward current derived from one of the following two methods: a) Derivative threshold current ITH(D) The forward current at which th
40、e second derivative of the curve showing output power P versus forward current IF has its first maximum (see Figure 3a). b) Extrapolated threshold current The forward current at which the extrapolated two straight lines of the stimulated emission and the spontaneous emission cross each other (see Fi
41、gure 3b). P d2P dIF2 d2P dIF2 P ITH IF IEC 205/06 Figure 3a Derivative threshold current of a laser diode BS IEC 60747-5-4:2006 7 Licensed Copy: London South Bank University, London South Bank University, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI P ITH IF IEC 206/06 Figure 3b Ex
42、trapolated threshold current of a laser diode Figure 3 Threshold current of a laser diode 3.4.5 noise characteristics (of a semiconductor laser) 3.4.5.1 relative intensity noise RIN (see ISO 11554) 3.4.5.2 carrier-to-noise ratio C/N The quotient of: the mean square radiant power at the specified fre
43、quency, to the mean square radiant power fluctuations normalized to a frequency band of unit width centered on the carrier frequency 3.4.6 small signal cut-off frequency fc (see ISO 11554) 3.4.7 optical characteristics of the laser beam (see ISO 11146-1, ISO 11146-2, ISO 1146-3, ISO 11670, ISO 13694
44、 and ISO 13695) 3.4.7.1 spatial profile (see ISO 11146-1, ISO 11146-2, ISO 11146-3, ISO 11670 and ISO 13694) 3.4.7.2 spectral characteristics (see ISO 13695) 3.4.8 half-intensity angle 1/2 in a radiation diagram, the angle within which the radiant intensity is greater than or equal to half of the ma
45、ximum intensity BS IEC 60747-5-4:2006 8 Licensed Copy: London South Bank University, London South Bank University, Thu Mar 01 07:56:11 GMT+00:00 2007, Uncontrolled Copy, (c) BSI 3.4.9 1/e2-intensity angle 1/e2 in a radiation diagram, the angle within which the radiant intensity is greater than or eq
46、ual to 1/e2 of the maximum intensity 3.4.10 half-intensity width D1/2 full width of a beam, within which the power density is greater than or equal to half of the maximum power density at a specified position z along the beam propagation direction 3.4.11 1/e2-intensity width D1/e2 full width of a be
47、am, within which the power density is greater than or equal to 1/e2 of the maximum power density at a specified position z along the beam propagation direction 4 Essential rating and characteristics NOTE Terms and requirements needed for essential ratings and characteristics are defined in IEC 60747
48、-1. 4.1 Type Ambient-rated or case-rated semiconductor lasers. 4.2 Semiconductor 4.2.1.1 Material Material such as GaAlAs, InGaAsP, InGaAlP, InGaAlN. 4.2.2 Structure 4.2.2.1 Epitaxial structure Structure such as (single or multi) quantum well, quantum dots, surface emitting. 4.2.2.2 Lateral structur
49、e Structure such as gain guiding, index guiding, distributed feed-back, broad area, phase- coupled array. 4.3 Details of outline drawing and encapsulation a) IEC and/or national reference number of the outline drawing. b) Method of encapsulation: glass/metal/plastic/other. c) Terminal identification and indicati