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1、BRITISH STANDARD BS QC 750111:1991 IEC 747-6-2: 1991 Specification for Harmonized system of quality assessment for electronic components Semiconductor discrete devices Blank detail specification Bidirectional triode thyristors (triacs), ambient or case-rated up to 100 A Licensed Copy: London South B
2、ank University, London South Bank University, Fri Dec 08 17:07:03 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750111:1991 BSI 02-2000 ISBN 0 580 35509 8 Amendments issued since publication Amd. No.DateComments Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08
3、 17:07:03 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750111:1991 BSI 02-2000i Contents Page Notional forewordii Introduction1 1Mechanical description2 2Short description2 3Categories of assessed quality2 4Limiting values (absolute maximum rating system)3 5Electrical characteristics4 6Marking5
4、7Ordering information5 8Test conditions and inspection requirements5 9Group D Qualification approval tests10 10Additional information(not for inspection purposes)10 Figure 1 Current derating curve for a triac (r.m.s. on-state current versus temperature)4 Licensed Copy: London South Bank University,
5、London South Bank University, Fri Dec 08 17:07:03 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750111:1991 ii BSI 02-2000 National foreword This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee ECL/-. It is identical with IEC Publicat
6、ion 747-6-2:1991 QC 750111 “Semiconductor devices Discrete devices Part 6: Thyristors. Section 2 Blank detail specification for bidirectional triode thyristors (triacs), ambient or case-rated, up to 100A” published by the International Electrotechnical Commission (IEC). Cross-references The British
7、Standard harmonized with QC 001001 and QC 001002 is BS 9000 “General requirements for a system for electronic components of assessed quality”. There is no corresponding British Standard for IEC 191, but BS 3934 “Specification for dimensions of semiconductor devices and integrated electronic circuits
8、” is a related standard. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. International St
9、andarda Corresponding British Standard IEC 68-2-17:1978BS 2011 Environmental testing Part 2.1Q:1981 Test Q. Sealing (Identical) IEC 747-6:1983BS 6493 Semiconductor devices Part 1: Discrete devices Section 1.6:1984 Recommendations for thyristors (Identical) IEC 747-10/QC 700000:1984BS 9970 Harmonized
10、 system of quality assessment for electronic components. Semiconductor devices Part 0:1985 Generic specification (Identical) IEC 747-11/QC 750000:1985BS QC 750000:1986 Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Sectional specification (Identica
11、l) IEC 749:1984BS 6493 Semiconductor devices Part 3:1985 Mechanical and climatic test methods (Identical) a Some standards are undated in the text. Summary of pages This document comprises a front cover, an inside front cover, pages i and ii, pages 1 to 10 and a back cover. This standard has been up
12、dated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:03 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750111:1991 BS
13、I 02-20001 Introduction The IEC Quality Assessment System for Electronic Components is operated in conformance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by
14、 one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank detail specification is one of a series of blank detail specifications for semiconductor devices
15、and should be used with the following IEC publications: 747-10/QC 700000 (1984): Semiconductor devices, Part 10: Generic specification for discrete devices and integrated circuits. 747-11/QC 750000 (1985): Semiconductor devices, Part 11: Sectional specification for discrete devices. Required informa
16、tion Numbers shown in brackets on this and the following pages correspond to the following items of required information, which should be entered in the spaces provided. Identification of the detail specification 1 The name of the National Standards Organization under whose authority the detail spec
17、ification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any further information required by the national system. Identification of the compone
18、nt 5 Type of component 6 Information on typical construction and applications. If a device is designed to satisfy several applications, this should be stated in the detail specification. Characteristics, limits and inspection requirements for these applications shall be met. If a device is electrost
19、atic sensitive, a caution statement should be added in the detail specification. 7 Outline drawing and/or reference to the relevant document for outlines. 8 Category of assessed quality. 9 Reference data on the most important properties to permit comparison between component types. Licensed Copy: Lo
20、ndon South Bank University, London South Bank University, Fri Dec 08 17:07:03 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750111:1991 2 BSI 02-2000 Name (address) of responsible NAI (and possibly of body from which specification is available). 1QC 750111-XXX Number of IECQ detail specification
21、plus issue number and/or date. 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication 747-10/QC 700000 Sectional specification: Publication 747-11/QC 750000 and national references if different. 3National number of detail specification. This box need not be
22、 used if national number repeats IECQ number. 4 DETAIL SPECIFICATION FOR: Type number(s) of the relevant device(s). Ordering information: see clause 7 of this standard. 5 1 Mechanical description2 Short description Outline references:7Bidirectional triode thyristors6 IEC 191-2. mandatory if availabl
23、e and/or national if there is no IEC outline. (triacs), ambient or case-rated, up to 100 A. Outline drawingSemiconductor material: Si may be transferred to or given with more devils in clause 10 of this standard. Encapsulation: cavity or non-cavity. Terminal identification Drawing showing pin assign
24、ments, including graphical symbols. 3 Categories of assessed quality From subclause 2.6 of the generic specification. 8 Marking:letters and figures, or colour code.Reference data9 The detail specification shall prescribe the information to be marked on the device, if any. See subclause 2.5 of generi
25、c specification and/or clause 6 of this standard. Polarity indication, if special method is used. Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List. Licensed Copy: London South Bank University, London South
26、Bank University, Fri Dec 08 17:07:03 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750111:1991 BSI 02-20003 4 Limiting values (absolute maximum rating system) These values apply over the operating temperature range, unless otherwise specified. Repeat only subclause numbers used, with the title. A
27、ny additional values should be given at the appropriate place, but without subclause number(s). Curves should preferably be given under clause 10 of this standard. SubclauseParametersSymbol Value min.max. 4.1Operating ambient or case temperatureTamb/case 4.2Storage temperatures Virtual junction temp
28、erature, if required Tatg T(vj) 4.3Voltage: Any condition such as time, frequency, temperature, mounting method, etc., shall be stated. (See note 1 of clause 5.) 4.3.1Crest working off-state voltageVDWM 4.3.2Repetitive peak off-state voltageVDRM 4.3.3Non-repetitive peak off-state voltageVDSM 4.4Curr
29、ents: Any condition such as time, frequency, temperature, mounting method, etc., shall be stated. (See note 1 of clause 5.) 4.4.1R.M.S. on-state current at the break-point temperature (see Figure 1). In single-phase circuits sinusoidal 180 conduction angle with resistive load. IT(RMS) 4.4.2Repetitiv
30、e peak on-state current where applicableITRM 4.4.3Surge on-state current: The surge on-state current corresponds to the maximum current applied after continuous operation at the maximum value of the r.m.s. on-state current. It is assumed that a loss of gate control may occur. The following current r
31、ating corresponds to the maximum current permissible for a half sinewave (10 ms at 50 Hz or 8,3 ms at 60 Hz), without reapplication of off-state voltage. ITSM 4.4.4Critical rate of rise of on-state current, where applicabledi/dt 4.4.5For case-rated devices only: I2t value, sinusoidal waveform, for 1
32、0 ms (50 Hz) or 8,3 ms (60 Hz): a) without reapplication of the reverse voltage, initial junction temperature T(vj) = T(vj) max. b) with reapplication of the reverse voltage VDWM max., initial junction temperature T(vj) = 25 C. I2t 4.5Gate rating: Any condition such as time, frequency, temperature m
33、ounting method, etc., shall be stated. 4.5.1Peak gate power dissipation.PGM 4.5.2Average gate power dissipationPG(AV) 4.6Mechanical ratings Mounting torque (if applicable). Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:03 GMT+00:00 2006, Uncontrolled Cop
34、y, (c) BSI BS QC 750111:1991 4 BSI 02-2000 5 Electrical characteristics See clause 8 of this standard for inspection requirements. Figure 1 Current derating curve for a triac (r.m.s. on-state current versus temperature) Subclause Characteristics and conditions at Tamb or Tcase = 25 C unless otherwis
35、e specified (see clause 4 of the generic specification) (see note 1) Symbol Value Tested min.max. 5.1On-state voltage: Maximum value at the peak current corresponding to two times the rated maximum r.m.s. on-state current IT(RMS) VTMA2b 5.2Off-state current: Maximum value at rated repetitive peak of
36、f-state voltage VDRM: at 25 C at a specified high temperature IDM1 IDM2 A2b A3 5.3Holding current: Maximum valueIHC2a 5.4Latching current: Maximum valueILC2a 5.5Gate trigger current: Maximum valueIGTA2b 5.6Gate trigger voltage: Maximum valueVGTA2b 5.7Gate non-trigger voltage: Maximum valueVGDA4 5.8C
37、ritic rate of rise of commutating voltage: Maximum value dv/dt(com)A4 5.9Critical rate of rise of off-state voltage: where appropriate: Maximum value dv/dt 5.10Total power dissipation: The maximum total power dissipation graph as a function of the r.m.s. on-state current and conduction angle Ptot 5.
38、11Thermal resistance: (if T(vj) is specified in subclause 4.2)Rth(Jc) NOTE 1The ratings and characteristics are based upon symmetrical operation of the device and therefore upon limiting values for either direction of operation. If a characteristic is sensitive to the gate triggering mode, the mode(
39、s) applicable shall be specified. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:03 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750111:1991 BSI 02-20005 Repeat only subclause numbers used, with title. Any additional characteristics should be given at
40、 the appropriate place but without subclause number. When several devices are defined in the same detail specification, the relevant values should be given on successive lines, avoiding repeating identical values. Curves should preferably be given under clause 10 of this standard. 6 Marking Any part
41、icular information other than that given in box 7 (clause 1) and/or subclause 2.5 of the generic specification shall be given here. 7 Ordering information The following minimum information is necessary to order a specific device, unless otherwise specified: precise type reference (and nominal voltag
42、e value if required); IECQ reference of detail specification with issue number and/or date when relevant; category of assessed quality as defined in subclause 3.7 of the sectional specification and, if required, screening sequence as defined in subclause 3.6 of the sectional specification; any other
43、 particulars. 8 Test conditions and inspection requirements They are given in the following tables, where the values and exact test conditions to be used shall be specified as required for a given type, and as required by the relevant test in the relevant publication. The choice between alternative
44、tests and test methods shall be made when a detail specification is written. When several devices are included in the same detail specification, the relevant conditions and/or values should be given on successive lines, avoiding where possible, repetition of identical conditions and/or values. Throu
45、ghout the following text, reference to subclause numbers is made with respect to the generic specification unless otherwise stated and test methods are quoted from clause 4 of the sectional specification. FOR SAMPLING REQUIREMENTS, EITHER REFER TO, OR REPRODUCE, VALUES OF SUBCLAUSE 3.7 OF THE SECTIO
46、NAL SPECIFICATION, ACCORDING TO THE APPLICABLE CATEGORY(IES) OF ASSESSED QUALITY. FOR GROUP A, THE CHOICE BETWEEN THE AQL AND THE LTPD SYSTEM SHALL BE MADE IN THE DETAIL SPECIFICATION. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:03 GMT+00:00 2006, Unco
47、ntrolled Copy, (c) BSI BS QC 750111:1991 6 BSI 02-2000 GROUP A Lot-by-lot All tests are non-destructive (3.6.6) Inspection or testSymbolReference Conditions at Tamb or Tcase = 25 C unless otherwise specified (see clause 4 of the generic specification) Inspection requirement limits min.max. Sub-group
48、 A1 External visual examination 4.2.1.1 Sub-group A2a Inoperative devices Inverted polarity VTM 10 VTMmax. or IDM 100 IDMmax. (unless otherwise specified) Sub-group A2b Peak on-state voltage (pulse method) VTMT-101 See note 2 Peak current = corresponding to times the rated maximum r.m.s. on-state cu
49、rrent IT(RMS)max. Peak off-state current IDM1T-103VDRM = rated Gate trigger currentIGTT-109Peak off-state voltage VD= 12 V, unless otherwise stated Gate trigger voltageVGTT-109Gate circuit conditions Sub-group A3 Peak off-state current IDM2T-103see note 2 VDRM = rated T = Tcase max. or Tamb max. Sub-group A4 Critical rate of rise of commutating voltage dv/dt(com) T-118See note 2