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1、BRITISH STANDARD BS QC 750109:1993 IEC 747-2-2: 1993 Specification for Harmonized system of quality assessment for electronic components Blank detail specification Rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A Licensed Copy: London S
2、outh Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750109:1993 BSI 10-1999 ISBN 0 580 35531 4 National foreword This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee. I
3、t is identical with IEC 747-2-2:1993 (QC 750109) Semiconductor devices Discrete devices Part 2: Rectifier diodes Section 2: lank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated for currents greater than 100A, published by the International Ele
4、ctrotechnical Commission (IEC). A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary o
5、f pages This document comprises a front cover, an inside front cover, pages i and ii, pages 1 to 10 and a back cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Cross-reference
6、s International StandardCorresponding British Standard IEC 68-2-17:1978BS 2011 Environmental testing Part 2.1Q:1981 Test Q. Sealing Identical IEC 191-2:1966BS 3934 Mechanical standardization of semiconductor devices Part 2:1992 Schedule of international drawings giving dimensions (Identical) IEC 747
7、-2:1983BS 6493 Semiconductor devices Section 1.2:1984 Recommendations for rectifier diodes (Identical) IEC 747-10:1991/ QC 700000:1981 BS QC 700000:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Generic specification for discrete devices and integrated
8、 circuits (Identical) IEC 747-11:1985/ QC 750000:1985 BS QC 750000:1986 Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Sectional specification (Identical) IEC 749:1984BS 6493 Semiconductor devices Part 3:1985 Mechanical and climatic test methods (I
9、dentical) Amendments issued since publication Amd. No.DateComments Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750109:1993 BSI 10-1999i Contents Page National forewordInside front cover Introduction1
10、1Mechanical description2 2Short description2 3Categories of assessed quality2 4Limiting values3 5Electrical characteristics5 6Marking6 7Ordering information6 8Test conditions and inspection requirements6 9Group D Qualification approval tests10 10Additional information10 Figure 1 Current derating cur
11、ve for a rectifier diode4 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00 2006, Uncontrolled Copy, (c) BSI ii blank Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00 2006, Uncontrolled Cop
12、y, (c) BSI BS QC 750109:1993 BSI 10-19991 Introduction The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that ele
13、ctronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank detail specification is one of a series of blank detail specificati
14、ons for semiconductor devices and shall be used with the following IEC publications: IEC 747-10/QC 700000 (1991), Semiconductor devices Discrete devices and integrated circuits Part 10: Generic specification for discrete devices and integrated circuits. IEC 747-11/QC 750100 (1985), Semiconductor dev
15、ices Discrete devices and integrated circuits Part 11: Sectional specification for discrete devices. Required information Numbers shown in brackets on this and the following pages correspond to the following items of required information, which should be entered in the spaces provided. Identificatio
16、n of the detail specification 1 The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail sp
17、ecification, date of issue and any further information required by the national system. Identification of the component 5 Type of component. 6 Information on typical construction and applications. If a device is designed to satisfy several applications, this shall be stated here. Characteristics, li
18、mits and inspection requirements for these applications shall be met. If a device is electrostatic sensitive, or contains hazardous material, e.g. beryllium oxide, a caution statement should be added in the detail specification. 7 Outline drawing and/or reference to the relevant standard for outline
19、s. 8 Category of assessed quality. 9 Reference data on the most important properties to permit comparison between component types. Throughout this standard, the texts given in square brackets are intended for guidance to the specification writer and should not be included in the detail specification
20、. Throughout this standard, when a characteristic or rating applies, “” denotes that a value shall be inserted in the detail specification. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750109:1993 2 BS
21、I 10-1999 Name (address) of responsible NAI (and possibly of body from which specification is available). 1 Number of IECQ detail specification plus issue number and/or date. QC 750109-XXX 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication 747-10/QC 700
22、000 Sectional specification: Publication 747-11/QC 750100 and national references if different. 3 National number of detail specification. This box need not be used if the National number repeats IECQ number. 4 DETAIL SPECIFICATION FOR: RECTIFIER DIODES (INCLUDING AVALANCHE RECTIFIER DIODES), AMBIEN
23、T AND CASE-RATED, FOR CURRENTS GREATER THAN 100 A Type number(s) of the relevant device(s). Ordering information: see clause 7 of this standard. 5 1 Mechanical description2 Short description Outline references: IEC 191-2. mandatory if available and/or national if there is no IEC outline. Outline dra
24、wing may be transferred to or given with more details in clause 10 of this standard. 7 Rectifier diodes (including avalanche rectifier diode), ambient and case-rated, for currents greater than 100 A. Semiconductor material: Si Encapsulation: cavity or non-cavity. Applications(s): see clause 5 of thi
25、s standard. CAUTION: Observe precautions for handling ELECTROSTATIC SENSITIVE DEVICES if applicable 6 Terminal identification drawing showing pin assignments including graphical symbols. 3 Categories of assessed quality from subclause 2.6 of the generic specification. 8 Marking: letters and figures,
26、 or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See subclause 2.5 of the generic specification and/or clause 6 of this standard. Polarity indication, if a special method is used. Reference data9 Information about manufacturers who have co
27、mponents qualified to this detail specification is available in the current Qualified Products List. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750109:1993 BSI 10-19993 4 Limiting values (absolute ma
28、ximum rating system) These values apply over the operating temperature range unless otherwise specified. Repeat only subclause numbers used, with title. Any additional values shall be given at the appropriate place, but without subclause number(s). Curves should preferably be given under clause 10 o
29、f this standard. SubclauseParametersSymbol Value min.max. 4.1 4.2 4.3 4.4 4.4.1 4.4.2 4.4.3 4.4.4 4.5 4.5.1 4.5.2 4.5.3 4.5.4 4.5.5 Operating ambient or case temperatures Storage temperatures Virtual junction temperature (if required) Maximum value of the junction temperature for which the voltage a
30、nd current ratings in 4.4 and 4.5 apply Voltage: Any condition such as time, frequency, temperature, mounting method, etc., shall be stated. (See note 1) Repetitive peak reverse voltage Crest working reverse voltage Non-repetitive peak reverse voltage Direct reverse voltage, where applicable Current
31、: Any condition such as time, frequency, temperature, mounting method, etc., shall be stated. Mean forward current at specified Tbreak (see Figure 1) In single-phase circuit, sinusoidal 180 conduction angle with resistive load If applicable, mean forward current at specified Tbreak (see Figure 1), r
32、ectangular waveshape, with specified duration tp and duty factor $ Repetitive peak forward current (if applicable) Direct forward current (if applicable) Surge forward current. The surge current rating corresponds to the maximum current applied after continuous operation at the maximum value of the
33、mean forward current. The following current ratings correspond to the maximum current permissible for a half-sine wave (10 ms 50 Hz at 8,3 ms at 60 Hz): a) without reapplication of reverse voltage b) with reapplication of reverse voltage Tamb/case Tstg T(vj) VRRM VRWM VRSM VRD IF(AV)1 IF(AV)2 IFRM I
34、FD IFSM IFSM1 IFSM2 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750109:1993 4 BSI 10-1999 SubclauseParametersSymbol Value min.max. 4.5.6 4.6 4.7 For case-rated devices only, I2t max. Maximum value, si
35、nusoidal waveform, for 10 ms (50 Hz) or 8,3 ms (60 Hz): a) without reapplication of the reverse voltage, initial junction temperature T(vj)= 25 C; b) with reapplication of the reverse voltage VRWM max., initial junction temperature T(vj)= 25 C. Power, if applicable Surge reverse power (if applicable
36、) Mechanical ratings Mounting torque (if applicable) I2t I2t1 I2t2 PRSM NOTE 1Subclause 4.4 may not be applicable when V(BR) is given in 5.3. Figure 1 Current derating curve for a rectifier diode Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00
37、 2006, Uncontrolled Copy, (c) BSI BS QC 750109:1993 BSI 10-19995 5 Electrical characteristics See clause 8 of this standard for inspection requirements. Repeat only subclause numbers used, with title. Any additional characteristics should be given at the appropriate place but without subclause numbe
38、r. When several devices are defined in the same detail specification, the relevant values should be given on successive lines, avoiding repeating identical values. Curves should preferably be given under clause 10 of this standard. Subclause Characteristics and conditions at Tambor Tcase= 25 C unles
39、s otherwise specified (see clause 4 of the generic specification) Symbol Value Tested min.max. 5.1 5.1.1 5.1.2 5.2 5.2.1 5.2.2 5.3 5.4 5.4.1 5.4.2 5.4.3 5.5 5.6 Forward voltage Maximum value at the peak current corresponding to x times the rated maximum mean forward current IF(AV)1 If applicable, ma
40、ximum value at the peak current of the rectangular waveform corresponding to the rated mean forward current IF(AV)2 Reverse current: Maximum value at the rated repetitive peak reverse voltage VRRM, or at a specified voltage when V(BR) is given in 5.3: at Tamb/case= 25 C without forward power at Tamb
41、/case (max.) without forward power Avalanche breakdown voltage Minimum (and, for controlled-avalanche rectifier diodes, maximum) value at a specified current Recovery Recovered charge (where appropriate) maximum value, or maximum and minimum values, under specified conditions Reverse recovery curren
42、t (where appropriate): maximum value under specified conditions Reverse recovery time (where appropriate): maximum value under specified conditions Total power: Curves showing the maximum total power for resistive load as a function of the mean on-state current with conduction angle as parameter The
43、rmal resistance: Junction-to-amb/case (if T(vj) is specified in 4.3) VFM1 VFM2 IRRM1 IRRM2 V(BR) Qr IRM trr Ptot RthJA/ RthJC (note 2) (note 2) A2b A2b A2b C2b A2b C2a NOTE 2Where appropriate. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:11:57 GMT+00:00 20
44、06, Uncontrolled Copy, (c) BSI BS QC 750109:1993 6 BSI 10-1999 6 Marking Any particular information other than that given in box 7 (clause 1) and/or subclause 2.5 of the generic specification shall be given here. 7 Ordering information The following minimum information is necessary to order a specif
45、ic device, unless otherwise specified: precise type reference (and nominal voltage value, if required); IECQ reference of detail specification with issue number and/or date when relevant; category of assessed quality as defined in subclause 3.7 of the sectional specification and, if required, screen
46、ing sequence as defined in subclause 3.6 of the sectional specification; any other particulars. 8 Test conditions and inspection requirements These are given in the following tables, where the values and exact test conditions to be used shall be specified as required for a given type, and as require
47、d by the relevant tests in the relevant publication. The choice between alternative tests or test methods shall be made when a detail specification is written. When several devices are included in the same detail specification, the relevant conditions and/or values should be given on successive line
48、s, where possible avoiding repetition of identical conditions and/or values. In this section, reference to subclause numbers are made with respect to the generic specification unless otherwise stated and test methods are quoted from clause 4 of the sectional specification. For sampling requirements,
49、 either refer to, or reproduce, values of subclause 3.7 of the sectional specification, according to applicable category(ies) of assessed quality. Group A inspection and tests shall be performed on all devices. Group B inspections and tests shall be performed on a lot-by-lot basis to a sampling plan of an LTPD = 30. Group C and D inspection and tests shall be performed on an LT