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1、STD-IS0 34237-ENGL 2000 = 4853703 0834766 244 INTERNATIONAL STANDARD IS0 14237 First edition 2000-02-01 Surface chemical analysis - Secondary- ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials Analyse chimique des surfaces - Mthode par spe
2、ctromtrie de masse des ions secondaires - Dosage des atomes de bore dans le silicium raide de matriaux dops uniformment This material IS reproduced from IS0 documents under International Orgaiiizatioii for Standardization (ISO) Copyright License Nuinber HIS/CC/1996. Not for resale. No part of these
3、IS0 documents may be reproduced in any form, electronic retrieval systeiii or otherwise, except as allowed in the copyright law of the country of ucc, or with the prior written coiisent of IS0 (Case postale 56,121 I Geneva 20, Switzerland, Fax +41 22 734 I O 79), IHS or the IS0 Licensors members. Re
4、ference number IS0 14237:2000(E) IS0 2000 Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Shell Global Solutions International B.V./5924979112 Not for Resale, 04/17/2007 10:59:35 MDTNo reproduction or networking permitted without license from
5、IHS -,-,- STD-IS0 34237-ENGL ZOO0 = 4853903 OB349b7 LBO IS0 1 4237:2000( E) PDF disclaimer This PDF file may contain embedded typefaces. In accordance with Adobes licensing policy, this file may be printed or viewed but shall not be edited unless the typefaces which are embedded are licensed to and
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9、 writing from either IS0 at the address below or ISOs member body in the country of the requester. IS0 copyright office Case postale 56 CH-121 1 Geneva 20 Tel. + 41 22 749 O1 11 Fax +41 22734 1079 E-mail copyrightOiso.ch Web www.iso.ch Printed in Switzerland 0 IS0 2000 -All rights reserved Copyright
10、 International Organization for Standardization Provided by IHS under license with ISO Licensee=Shell Global Solutions International B.V./5924979112 Not for Resale, 04/17/2007 10:59:35 MDTNo reproduction or networking permitted without license from IHS -,-,- STD-IS0 14237-ENGL 2000 = 4853903 0834968
11、 037 IS0 14237:2000( E) Contents Page Foreword . iv Introduction . v 1 Scope 1 2 Normative reference 1 3 Principle 1 4 Reference materials . 1 5 Apparatus . 2 6 Specimen 3 7 Procedure . 3 8 Expression of results 6 9 Test report 8 Annex A (informative) Determination of carrier density in silicon wafe
12、rs 9 Annex C (normative) Procedures for evaluation of apparatus performance 15 Annex B (informative) Boron isotope ratio measured by SIMS 12 Annex D (normative) Procedures for the depth profiling of NIST SRM 2137 17 Annex E (informative) Statistical report on interlaboratory test programme 20 Q IS0
13、2000 -All rights reserved iii Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Shell Global Solutions International B.V./5924979112 Not for Resale, 04/17/2007 10:59:35 MDTNo reproduction or networking permitted without license from IHS -,-,- ST
14、D-IS0 L4237-ENGL 2000 485L903 Q8L49b9 T53 E Is0 14237:2000(E) Foreword IS0 (the International Organization for Standardization) is a worldwide federation of national standards bodies (IS0 member bodies). The work of preparing International Standards is normally carried out through IS0 technical comm
15、ittees. Each member body interested in a subject for which a technical committee has been established has the right to be represented on that committee. International organizations, governmental and non-governmental, in liaison with ISO, also take part in the work. IS0 collaborates closely with the
16、International Electrotechnical Commission (IEC) on all matters of electrotechnical standardization. International Standards are drafted in accordance with the rules given in the ISO/IEC Directives, Part 3. Draft International Standards adopted by the technical committees are circulated to the member
17、 bodies for voting. Publication as an International Standard requires approval by at least 75 % of the member bodies casting a vote. Attention is drawn to the possibility that some of the elements of this International Standard may be the subject of patent rights. IS0 shall not be held responsible f
18、or identifying any or all such patent rights. International Standard IS0 14237 was prepared by Technical Committee ISOTTC 201, Surface chemical analysis, Subcommittee SC 6, Secondary ion mass spectrometry. Annexes C and D form a normative pari of this International Standard. Annexes A, B and E are f
19、or information only. iv O IS0 2000 -All rights reserved Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Shell Global Solutions International B.V./5924979112 Not for Resale, 04/17/2007 10:59:35 MDTNo reproduction or networking permitted without
20、 license from IHS -,-,- STD-IS0 14237-ENGL 2000 I 4851903 0814970 775 I IS0 14237:2000(E) Introduction This International Standard was prepared for the determination by secondary-ion mass spectrometry (SIMS) of boron atomic concentrations in uniformly doped silicon wafers. SIMS needs reference mater
21、ials to perform quantitative analyses. Certified reference materials are only available for limited matrix-impurity combinations, and they are costly. SIMS inevitably consumes these reference materials at every measurement. Thus, secondary reference materials which can be prepared by each laboratory
22、 and calibrated using a certified reference material are useful for daily analyses. In this International Standard, a standard procedure is described for quantitative boron analysis in single-crystalline silicon using secondary reference materials calibrated by a certified reference material implant
23、ed with boron. O IS0 2000 -All rights reserved V Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Shell Global Solutions International B.V./5924979112 Not for Resale, 04/17/2007 10:59:35 MDTNo reproduction or networking permitted without licens
24、e from IHS -,-,- STD.ISO 34237-ENGL 2000 4853903 083497L bo3 INTERNATIONAL STANDARD IS0 14237:2000(E) Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials 1 Scope This International Standard specifies a s
25、econdary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon using uniformly doped materials calibrated by a certified reference material implanted with boron. This method is applicable to uniformly doped boron in the concentration range fr
26、om 1 x 1016 atoms/cm3 to 1 x 1020 atoms/cm3. 2 Normative reference The following normative document contains provisions which, through reference in this text, constitute provisions of this International Standard. For dated references, subsequent amendments to, or revisions of, this publication do no
27、t apply. However, parties to agreements based on this International Standard are encouraged to investigate the possibility of applying the most recent edition of the normative document indicated below. For undated references, the latest edition of the normative document referred to applies. Members
28、of IS0 and IEC maintain registers of currently valid International Standards. IS0 5725-2:1994, Accuracy (trueness and precision) of measurement methods and results - Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method. 3 Principle An oxyge
29、n-ion beam or a caesium-ion beam is impinged onto the sample surface and the emitted secondary ions of boron and silicon are mass-analysed and detected. Uniformly doped secondary reference materials are calibrated by using an ion-implanted primary reference material and are used as working reference
30、 materials. 4 Reference materials 4.1 Primary reference material A primary reference material is used for the determination of the boron atomic concentration of the secondary reference materials, The primary reference material shall be a certified reference material (CRM) of silicon implanted with b
31、oron. NOTE this moment. NIST Standard Reference Material 2137 (referred to hereinafter as NIST SRM) is the only CRM of boron in silicon at Q IS0 2000 -All rights reserved 1 Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Shell Global Solutions
32、 International B.V./5924979112 Not for Resale, 04/17/2007 10:59:35 MDTNo reproduction or networking permitted without license from IHS -,-,- STD.IS0 14237-ENGL 2000 4853903 0814972 548 IS0 14237:2000(E) 4.2 Secondary reference materials 4.2.1 Secondary reference materials are used for the determinat
33、ion of boron atomic concentrations in test specimens. At least one boron-doped reference material together with one non-boron-doped reference material shall be used for daily analysis. Two other different boron-doping levels are recommended to be used to confirm the performance of the apparatus (see
34、 annex C). 4.2.2 The secondary reference materials (referred to hereinafter as bulk RMs) shall be single-crystal silicon wafers or epitaxial silicon wafers with a Ca. 100 pm thick epitaxial layer, and shall be uniformly doped with natural- isotopic boron. 4.2.3 Boron-doped wafers with boron atomic c
35、oncentrations between 1 x 10l6 atoms/cm3 and 1 x 1020 atoms/cm3 shall be obtained. It is recommended that the three doping levels given in Table 1 are used. When only one level is used, RM-B or RM-C should be chosen. A non-boron-doped wafer shall be obtained for background checking. Wafers with smal
36、l boron concentration gradients shall be selected. The boron concentration gradient shall be less than 5 % per cm. NOTE Approximate boron atomic concentrations can be determined as carrier densities from the resistivity of the wafers. The resistivity measurement procedures and the procedure for conv
37、erting between resistivity and carrier density are presented in annex A. Table 1 - Bulk reference materials I Name I Boron doping level atoms/cm3 RM-A RM-B RM-C RM-BG low i x io16to i x 1017 middle high 5 x lo1 to 5 x 1Ol8 1 x 1019 to 1 x 1020 none 100 pm2 4 times the analysed area or larger Primary
38、-ion species Secondary-ion polarity Analysed area Primary-ion scan area Characteristic I cs+ Negative 100 pm2 4 times the analysed area or larger 7.2 Optimizing the secondary-ion mass spectrometer settings 7.2.1 instructions or a local documented procedure. Set the required instrument parameters and
39、 align the ion optics in accordance with the manufacturers 7.2.2 manufacturers instructions or a local documented procedure. Ensure the stability of the primary-ion current and the mass spectrometer in accordance with the 7.3 Specimen introduction Immediately prior to introducing the specimens into
40、the SIMS apparatus, dust particles shall be removed from the surfaces with a pressurized duster. After introducing the specimens into the analysis chamber, analysis shall not start until the pressure has recovered to the normal value recommended by the manufacturer or a local documented procedure. Q
41、 IS0 2000 -All rights resewed 3 Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Shell Global Solutions International B.V./5924979112 Not for Resale, 04/17/2007 10:59:35 MDTNo reproduction or networking permitted without license from IHS -,-,-
42、STDmISO L4237-ENGL 2000 = 4853903 0834974 330 IS0 14237:2000(E) NOTE detection, so care should be taken to obtain a better vacuum condition when a caesium-ion beam is used. Residual gases in the analysis chamber can produce a ioB28Si1H- background signal which interferes in “B2%i- 7.4 Detected ions
43、7.4.1 When an oxygen-ion beam is used, both 1B+ and llB+ shall be detected as secondary-ion species of boron. When a caesium-ion beam is used, both 10B28Si- and 1lB28Si- shall be detected as secondary-ion species of boron. 7.4.2 manufacturers instructions or a local documented procedure. The ion spe
44、cies of silicon which has an appropriate ion intensity shall be detected, following the NOTE If the instrument has an electrometer detection mode, it is recommended that *%i+ be detected as the reference ion of B+ using the electrometer. For the pulse-counting mode, the silicon-ion intensity should
45、be less than 1 x lo5 counts/s. For BSi- detection, Si,- is preferable as the reference ion. 7.5 Calibration 7.5.1 Measurement procedure for CRM 7.5.1.1 The depth profile of boron (either loB or llB) in the CRM shall be measured using the same conditions as those for the bulk RMs on the same day as t
46、he bulk RM measurements, following the procedures stipulated in annex D. The mean integrated ion intensity ratio of the CRM, AimP, shall be calculated following the procedures stipulated in clause D.7. 7.5.1.2 The relative sensitivity factor of the CRM shall be obtained from the following formula: w
47、here RSFimP is the isotopic relative sensitivity factor obtained from the CRM; # is the implanted boron (either l0B or llB) dose of the CRM. 7.5.2 Measurement procedure for bulk RMs 7.5.2.1 Measurements shall be made from the central region of the specimen holder window. When the boron- ion intensit
48、y of the bulk RM is high, care shall be taken so as not to saturate the detector. If the boron-ion intensity is higher than 1 x lo5 countds, the primary-ion intensity shall be reduced. 7.5.2.2 Depth profiles of boron and silicon shall be measured for all the bulk RMs. The data sampling described below shall start after any surface contamination is removed and the secondary-ion intensities reach stationary values, but shall be concluded before a change in secondary-ion intensity occurs due to surface roughening induced by ion bombardment. 7.5.2.3 The secondary-ion