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1、STD-JIS C 5940-ENGL 1997 m 4933608 0549343 52T m JIS f JAPANESE IN DUSTRIAL STANDARD Translated and Published by Japanese Standards Association General rules of laser diodes for fiber optic transmission ICs 31.260 Descriptors : lasers, solid lasers, semiconductors, optical communication systems, com
2、munication transmission lines, fibre optics, specifications, semiconductor devices Reference number : JIS C 5940 : 1997 (E) 13 S Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Employees/1111111001, User=Wing, Bernie Not for Resale, 03/15/2007 20:56:23 MDT
3、No reproduction or networking permitted without license from IHS -,-,- STD=JIS C 5340-ENGL 1997 W 4933606 0549344 4bb C 5940 : 1997 Foreword This translation has been made based on the original Japanese Industrial Standard revised by the Minister of International Trade and Industry through deliberat
4、ions at Japanese Industrial Standards Committee in accordance with the Industrial Standardization Law. Consequently, JIS C 5940: 1989 has been revised and replaced with this Standard. In this revision, conformance of provisions between JIS and International Standard was taken into consideration. Att
5、ention is drawn to the possibility that some parts of this Standard may conflict with a patent right, application for a patent after opening to the public, utility model right or application for registration of utility model after opening to the public which have technical properties. The relevant M
6、inister and the Japanese Industrial Standards Committee are not responsible for identifying the patent right, application for a patent after opening to the public, utility model right or application for registration of utility model after opening to the public which have the said technical propertie
7、s. This Standard contains Annexes stated as follows: Annex 1 (informative) Form of detail specification of laser diodes for fiber optic transmission Annex 2 (informative) Form of detail specification for environmental test and endurance test of laser diodes for optic trans- mission Annex 3 (informat
8、ive) Marking on electrostatic sensitive device Date of Establishment: 1989-03-01 Date of Revision: 1997-08-20 Date of Public Notice in Official Gazette: 1997-08-20 Investigated by: Japanese Industrial Standards Committee Divisional Council on Electronics JIS C 5940: 1997, First English edition publi
9、shed in 1998-03 Translated and published by: Japanese Standards Association 4-1-24, Akasaka, Minato-ku, Tokyo, 107-8440 JAPAN In the event of any doubts arising as to the contents, the original JIS is to be the final authority. O JSA 1998 All rights reserved. Unless otherwise specified, no part of t
10、his publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from the publisher. Printed in Japan Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Em
11、ployees/1111111001, User=Wing, Bernie Not for Resale, 03/15/2007 20:56:23 MDTNo reproduction or networking permitted without license from IHS -,-,- STD.JIS C 5940-ENGL 1777 = 9733608 O549345 3T2 D JAPANESE INDUSTRIAL STANDARD JIS C 5940: 1997 General rules of laser diodes for fiber optic transmissio
12、n Introduction Users should note that at application of this Standard, the normative references to this Standard shall be referred at the same time. Further, it is often neces- sary to carry out comparison with and study on the similar standard(s), if any. This is a Japanese Industrial Standard prep
13、ared based on IEC 747-5, Semiconductor devices. Discrete devices and integrated circuits-Part 5: Optoelectronic devices issued in 1992, IEC 747-5 Amendment 1 issued in 1994 and IEC 747-5 Amendment 2 issued in 1995, without any modification in technical contents. 1 Scope This Japanese Industrial Stan
14、dard specifies such general common matters as terms, classification, maximum ratings and performances for laser diodes for fiber optic transmission (excluding ones accommodated in electronic circuits; hereafter referred to as “laser diodes”) used as the light source. Remarks 1 The normative referenc
15、es to this Standard are as follows: JIS C 0301 JIS C 5941 JIS Z 8202 JIS Z 8203 Graphical symbols for electrical apparatus Test methods oflaser diodes for fiber optic transmission Quantity symbols, unit symbols and chemical symbols SI units and the use of their multiples and of certain other units 2
16、 The International Standard corresponding to this Standard is shown below: IEC 747-5 : 1992 Semiconductor devices. Discrete devices and inte- grated circuitrPart 5 : Optoelectronic devices IEC 747-5 : 1994 Amendment 1 IEC 747-5 : 1995 Amendment 2 2 Definitions For the purpose of this Standard, the f
17、ollowing principal definitions apply: (i) absolute maximum rating The limit value which shall not be exceeded even for an instant. Any one of the specified values shall not be exceeded. storage temperature (T,) laser diodes are stored without the supply voltage and input signal applied. ambient temp
18、erature (Ta) diodes are located. (2) The allowable range of ambient temperature at which (3) The temperature of the atmosphere on which laser Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Employees/1111111001, User=Wing, Bernie Not for Resale, 03/15/2007
19、 20:56:23 MDTNo reproduction or networking permitted without license from IHS -,-,- STD-JIS C 5940-ENGL L997 m 4933b08 054934b 239 m 2 C 5940 : 1997 (4) operating temperature (Top) perature voltage or current. threshold current ( or the difference be- tween the longest wavelength and the shortest wa
20、velength from among the longitudinal modes emitted at a radiant power having a specified ratio or more to the maximum peak of longitudinal modes (for multimode emission). The width obtained relating with the emission spectrum equal to 50 % of the maxi- mum peak is called spectral half width (AA ). R
21、MS method The width of wavelength obtained from the optical level of n-th longitudinal mode (A,) and the emission wavelength ( A,) by means of the equa- tion stated below. The Kis a constat which shall be selected according to the purpose (from 1, 2, 2.35 and 3) and clearly stated (if 2.35 is select
22、ed the bandwidth corresponds the spectral half-width when the shape of spectrum is considered as Gaussian distribution). emission source seize width and height (WL, W,) The distance between two points (full width half maximum) where the distribution of optical power is 50 % of the peak value in the
23、direction perpendicular to (I) or parallel to (/O the pn junc- tion plane at the optical output end of laser diode. half-intensity angle in two specified planes ( e I, e/,) The angular difference between two points (full angle half maximum) where the angular distribution of optical power is 50 % of
24、the peak value in a plane perpendicular to (I) or parallel to (/o the pn junction plane in an optical power distribution emitted from a laser diode (called field pattern sometimes). polarization ratio (Pl) The ratio of the optical power of linearly polarized light component parallel to the pn juncti
25、on plane to that perpendicular to the said face. side-mode suppression ratio (SMSR) This is the parameter which shows the uniqueness of longitudinal mode of the laser emitted mainly in longitudinal mode such as DFB laser, and expressed by the ratio in spectral intensity of the largest mode (main mod
26、e) to the second large mode (side mode). spectral linewidth (AAL) The width of wavelength spread in a spectral line at single longitudinal mode emission. This means the width between two points in a Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Employees
27、/1111111001, User=Wing, Bernie Not for Resale, 03/15/2007 20:56:23 MDTNo reproduction or networking permitted without license from IHS -,-,- STD.JIS C 5940-ENGL 1997 4933b08 0549348 001 4 C 5940 : 1997 spectral line at which the optical power is a value equal to a specified ratio to the maximum valu
28、e of the spectrum, and usually expressed by the frequency. (22) rise time (t,) The time necessary for an optical output pulse to increase from 10 % to 90 % of the maximum value ( ). (23) fall time (tf) The time necessary for an optical output pulse to decrease from 90 % to 10 % of the maximum value
29、( ). (24) turn-on time (ton) The necessary time interval for increasing from 10 % of the maximum value of applied current pulse to 90 % of the maximum value ( ) of out- put optical pulse. (25) turn-off time (toff) The necessary time interval for decreasing from 90 % of the maximum value of applied c
30、urrent pulse to 10 % of the maximum value ( ) of out- put optical pulse. (26) turn-on delay time The necessary time interval for increasing from 90 % of the maximum value of applied current pulse to 90 % of the maximum value( ) of output optical pulse. (27) turn-off delay time (tdcof0) The necessary
31、 time interval for decreasing from 90 % of the maximum value of applied current pulse to 90 % of the maximum value( * ) of output optical pulse. Note( ) The maximum value means the stationary value after transition oscilla- tions. (28) cut-off frequency (f,) The frequency at which the amplitude of a
32、 sinusoidal modulated radiant power produced by modulation with small sinusoidal signal at the specified bias point decreases by 3 dB, from that in low frequency region where the characteristic curve is sufficiently flat. (29) relative intensity noise (RIN) The ratio of the intensity of optical nois
33、e to the average radiant power per unit frequency. The fluctuation of light can be meas- ured and calculated using such photo-receptive element as photodiode and an am- plifier, therefore this is practically obtained in such a manner that the Shottky noise of photo-receptive element and the thermal
34、noise of amplifier are eliminated from the noise measured at a specified frequency and the quotient of the re- mainder so obtained by the average output of laser diode (detected by photoelectric current of photo-receiver in general) and the measurement frequency bandwidh is calculated. (30) higher h
35、armonic distortion (O,) This means the electric power of n-th higher harmonic which appears when a laser diode is directly modulated (analog modula- tion) by a sinusoidal signal expressed in the ratio to the electric power of the sinu- soidal signal. (31) composite second-order distortion (CSO) When
36、 a laser diode is directly modu- lated (analog modulation) by multi-channel sinusoidal signals of the same electric power and frequencies arranged systematically, second-order intermodulation dis- tortions appear. This term means the ratio of total electric power of such distor- Copyright Japanese S
37、tandards Association Provided by IHS under license with JSALicensee=IHS Employees/1111111001, User=Wing, Bernie Not for Resale, 03/15/2007 20:56:23 MDTNo reproduction or networking permitted without license from IHS -,-,- STDWJIS C 5940-ENGL 1997 = 4933b08 0549347 T48 5 C 5940 : 1997 tions appearing
38、 on the same frequency to the electric power of the sinusoidal Sig- nal of the neighboring one channel. However, this term often designates the maximum value of distortion for one channel within its image band. (32) composite tripple-beat distortion (CTB) When a laser diode is directly modulated (an
39、alog modulation) by multi-channel sinusoidal signals of the same electric power and frequencies arranged systematically, tripple-beat intermodulation distortions appear. This term means the ratio of total electric power of such distortions ap- pearing on the same frequency to the electric power of t
40、he sinusoidal signal of the neighboring one channel. However, this term often designates the maximum value of distortion for one channel within its image band. (33) carrier to noise ratio ( U N ) The ratio of average value of a radiant power to the magnitude of fluctuation of the radiant power. (34)
41、 monitor current (Irn) The current which is obtained by carrying out photo- electric transfer of a monitor radiant power. (35) dark current of monitor photodiode (Id) The current which flows through output part of optical monitor when the laser diode is not emitted. (36) monitor photodiode capacitan
42、ce (CJ The capacitance between terminals of a pho- todiode. (37) riae time of monitor photodiode (trpd) The time necessary for the output pulse current of photodiode to increase from 10% to 90 % of the maximum value. (38) fall time of monitor photodiode (tfpd) The time necessary for the output pulse
43、 current of monitor photodiode to decrease from 90 % to 10 % of the maximum value. (39) tracking error (E,) Under operating state of APC (automatic power control) utilizing monitor photodiode accommodated in a laser diode system, the radiant power at a specific temperature is denoted as Po, and the
44、radiant power with maximum deviation which appears when the temperature is varied through a specified case or ambient temperature range is denoted as PO2. This term means the ratio of Po, and PO2. Otherwise, the ratio of the maximum radiant power and the minimum radiant power when the temperature is
45、 varied through a specified case or ambient temperature range under the said operating state of APC. 3 Detail specifications When the ratings, performances, outline, etc. of individual laser diode are specified based on this Standard, they shall be specified in the detail specification. 4 specified
46、in JIS C 0301. Graphical symbols The graphical symbols for use in this Standard shall be as The unit symbols shall be as specified in JIS Z 8202 and JIS Z 8203. Copyright Japanese Standards Association Provided by IHS under license with JSALicensee=IHS Employees/1111111001, User=Wing, Bernie Not for
47、 Resale, 03/15/2007 20:56:23 MDTNo reproduction or networking permitted without license from IHS -,-,- STD.JIS C 5940-ENGL 1997 4933b08 0549350 b T 6 C 5940 : 1997 6 Classification Laser diodes are classified as given in Table 1. Table 1 Classification of laser diodes Classifici Major item Crystal m
48、aterial Wavelength band Element construction Package construction Use for .ion item Minor item Junction construction Stripe construction Feedback construction Optical output con- struction Monitor output con- struction Terminal construction Kinds Aluminum gallium arsenic/gallium arse- nic (AlGaAcIGa
49、As), Indium gallium ar- senic phosphorus/indium phosphorus (InGaAsPDnp), etc. 800 nm band, 1 300 nm band, 1 550 nm band, etc. Double hetero(DH) junction, separate confinement hetero junction, quantum well structure, etc. Gain waveguide type, refraction waveguide type, etc. Cleavage plane reflection type, distribut- e