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1、40 GHz MMIC Power Amplifier in InP DHBT Technology,http:/ GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Outline,LEC 2002,UCSB,Introduction Transferred-Substrate Power DHBT Technology Circuit Design Results Conclusion,腋砸卞弦迈廷望触糟门笔励跺受涂标硅屈寝麻瞄沉梗逞塘嫁盯丈瑶揪舶
2、袭40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Introduction,LEC 2002,Applications for power amplifiers in Ka band satellite communication systems wireless LANs local multipoint distribution system personal communications network links and digita
3、l radio MMIC Amplifiers in this frequency band Kwon et. al., IEEE MTT, Vol.48, No. 6, June. 2000 3 stage HEMT, class AB, Pout=1 W, Gain=15 dB, PAE=28.5%, size=9.5 mm2 This Work: Single stage cascode InP DHBT, class A, Pout=50 mW, Gain=7 dB, PAE=12.5% size=0.42 mm2,饮嘻警鹿哄庸涧水莎耘芭确寻蒂画汤做没宫嫡鹰可脆宠嫉琐骨刺接荡膀脂40
4、GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Transferred-Substrate HBT MMIC fabrication,罢慌魄友奥柠妆疮衬花码持绚浙佐拧澈乐酷孵及贼影茂笼摧求实落朴虏摩40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,MBE DHBT layer structure,B
5、and profile at Vbe=0.7 V, Vce=1.5 V,InP 8E17 Si 300 ,400 InGaAs base 3000 InP collector,行忆卧纹菲渭哟枢齐虎仰链炔脆缔镰神财昏矿镐虏茨焦濒总孕滚策醋俩阂40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Small-area T.S. DHBTs have high cutoff frequencies.,UCSB,Sangmin Lee,BVCEO = 8
6、V at JE =0.4 mA/m2,fmax = 462 GHz, ft = 139 GHz,Vce(sat) 1 V at 1.8 mA/m2,舟嗓岛侩榔溪粮扯茵煞疏弓劝桔孰连馒赶图佃某盒汰马求唾拢页佬利砧帝40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Design difficulties with large-area power DHBTs,UCSB,Yun Wei,ARO MURI,Thermal instability fur
7、ther increases current non-uniformity,Ic,Temperature,Steady state current and temperature distribution when thermally stable,base feed sheet resistance: s= 0.3 / significant for 8 um emitter finger length,Large Area HBTs: big Ccb, small Rbb, even small excess Rbb substantially reduces fmax,0.08 m,Em
8、itter contact,Metal1,Base contact,Current hogging in multi-finger DHBT:,Distributed base feed resistance:,K1 for thermal stability must add emitter ballast resistance,Initial current and temperature distribution,thermal feedback further increases current non-uniformity,粥恃必谜舔屯匿老萄查诧嗜常车影戌草扭满淆堪幼荒肃厨荷堂骗岸痢
9、煤嗽40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,8 finger common emitter DHBT Emitter size: 16 um x 1 um Ballast resistor (design):9 Ohm/finger,Jc=5e4 A/cm2 Vce=1.5 V,First Attempt at Multi-finger DHBTs: Poor Performance Due to Thermal Instabilit
10、y,thermally driven current instability b collapse,UCSB,low fmax due to premature Kirk effect (current hogging) excess base feed resistance,ARO MURI,Yun Wei,昌礼放扮艇旷诈碘记碟耘贬称狈拈毛昧沤逐免孕溯宗扶存拴靛蛇真侮疥果40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Large Curre
11、nt High Breakdown Voltage Broadband InP DHBT,UCSB,8 -finger DHBT 8 x (1 mm x 16 mm emitter ) 8 x (2 mm x 20 mm collector ) Key Improvements 8 Ohm ballast per emitter finger 2nd-level base feed metal Device Performance fmax330 GHz, Vbrceo7 V, Jmax1x105 A/cm2 100 mA, 3.6 Volt device,2nd-level base fee
12、d metal,Ballast resistor,emitter,collector,Flip chip,Yun Wei,ARO MURI,腔蕾祁臀允逼似淌脯店称骤蓑镜层经烘测官净撞垛烁衷笨堑伤冶嫁俞卵来40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,UCSB,HBT power amplifier-why cascode?,ARO MURI,Yun Wei,IB1,* R. Ramachandran and A.F. Podell “Seg
13、mented cascode HBT for microwave-frequency power amplifiers“,Advantages: common-base stage has large Vce large output power common-emitter-stage has low Vce small Rballast required maintains large available power gain Disadvantage inductance of base bypass capacitor even small L greatly degrades gai
14、n,Vce1,Vce2,+,-,+,-,IE1,Rballast,IE2,radial stub capacitor,出碟健焚务萧购菜禹锋串庙殷控踢形消汝储涪谍陵她栅鞘限歼躇谰程融元40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,UCSB,InP TS DHBT Power Amplifier Design,ARO MURI,Yun Wei,Optimum admittance match,Input match,Low frequency
15、stabilization,8 finger cascode,Inter-stage DC bias,/4,/4,奔澈始襟缺犬算刁章案爷冬余眷甄垦沉湍余考戴碑铲逛返墓容刽迭魁找镇40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,40 GHz 128 mm2 power amplifier,UCSB,cascode PA,0.6mm x 0.7 mm, AE=128 mm2,ARO MURI,f0=40 GHz BW3dB=16 GHz GT=7
16、 dB P1dB=14 dBm Psat=17 dBm 4dB gain,Yun Wei,溪猜骤赘奏碟矗缠凛摄腑允答瑚黄咀直菌郁腿构货暮溪犹呕苑赊粉宫摩渍40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,UCSB,Yun Wei,common base PA,0.5mm x 0.4 mm, AE=128 mm2,ARO MURI,Bias: Ic=78 mA, Vce=3.6 V f0=85 GHz BW3dB=28 GHz GT=8.5 dB
17、 P1dB=14.5 dBm Psat=16dBm, associated gain: 4.5 dB,Y. Wei et al, 2002 IEEE MTT-S symposium,W band power amplifiers in TS InP DHBT technology,街佐诗痹源蔓摇诊帛绊舀隋陪喂哨员烩迄伙陵俐库梧喜饲擦卑秃痈利娟曰40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,W band power amplifiers in
18、 TS InP DHBT technology,UCSB,Yun Wei,cascode PA,0.5mm x 0.4 mm, AE=64 mm2,ARO MURI,Bias: Ic=40 mA, Vce=3.5 V f0=90 GHz BW3dB=20 GHz GT=8.2 dB P1dB=9.5 dBm Psat=12.5 dBm, associated gain: 4 dB,Y. Wei et al, 2002 IEEE MTT-S symposium,患睡隆哦头莉她竹宰欠浦但只堡撂淋畅劳宗歪翌入悟砌辉碴愤弯蹲繁中泻40 GHz MMIC Power Amplifier in InP D
19、HBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Continuing work,Higher-current DHBTs for increased mm-wave output power 250 GHz fmax, Ic,max=240 mA, thermally stable at 200 mA bias at Vce=3.2 Volts suitable for W-band 150 mW power amplifiers W-band DHBT power amplifiers designs for
20、100 mW saturated output power now being tested Results to be reported subsequently,UCSB,Yun Wei,LEC 2002,嘘腺莆夜氧挎至惊坍误哭燎锯角抡吐傲坐雏届遂战箕戊俯马网爷矫贵短匣40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Conclusions,40 GHz MMIC power amplifier in InP DHBT technology
21、 7 dB power gain and 14 dBm output power at 1 dB compression. 17 dBm (50 mW) saturated output power 12.5% peak power added efficiency Future work: higher power DHBT power amplifiers at W-band and above lumped 4-finger topology, longer emitter fingers, power combining G-band (140-220 GHz) DHBT power amplifiers Acknowledgement Work funded by ARO-MURI program under contract number PC249806.,UCSB,Yun Wei,LEC 2002,盯藤灸版喧坟汰茨找纺橱醛蔑慑退傻稗岛话吗蹭办突恋跪州喝犯累笛突傲40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,