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1、 Dated：20/06/2013 Rev：02 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited BZT52CW SILICON PLANAR ZENER DIODES Features Ideally suited for automated assembly processes Total power dissipation: max. 500 mW Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Power
2、 Dissipation Ptot 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg - 65 to + 150 Characteristics at Ta = 25 Parameter Symbol Max. Unit Thermal Resistance Junction to Ambient Air RthA 340 /W Forward Voltage at IF = 10 mA VF 0.9 V Anode2 Top View Simplified outline SOD-123 and symbol
3、1 2 PINNING 1 PIN Cathode DESCRIPTION SEMTECH Dated：20/06/2013 Rev：02 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited BZT52CW Characteristics at Ta = 25 Type Marking Code Zener Voltage Range 1) Dynamic Impedance Reverse Leakage Current Vznom VZT at IZTZZT at IZTZZK at IZ
4、K IR at VR V V mA Max. ()mA Max. () mA Max. (A)V BZT52C2V4W MH 2.4 2.2.2.6 5 100 5 600 1 50 1 BZT52C2V7W MJ 2.7 2.5.2.9 5 100 5 600 1 20 1 BZT52C3V0W MK 3.0 2.8.3.2 5 95 5 600 1 10 1 BZT52C3V3W MM 3.3 3.1.3.5 5 95 5 600 1 5 1 BZT52C3V6W MN 3.6 3.4.3.8 5 90 5 600 1 5 1 BZT52C3V9W MP 3.9 3.7.4.1 5 90
5、5 600 1 3 1 BZT52C4V3W MR 4.3 4.4.6 5 90 5 600 1 3 1 BZT52C4V7W MX 4.7 4.4.5 5 80 5 500 1 3 2 BZT52C5V1W MY 5.1 4.8.5.4 5 60 5 480 1 2 2 BZT52C5V6W MZ 5.6 5.2.6 5 40 5 400 1 1 2 BZT52C6V2W NA 6.2 5.8.6.6 5 10 5 150 1 3 4 BZT52C6V8W NB 6.8 6.4.7.2 5 15 5 80 1 2 4 BZT52C7V5W NC 7.5 7.7.9 5 15 5 80 1 1
6、 5 BZT52C8V2W ND 8.2 7.7.8.7 5 15 5 80 1 0.7 5 BZT52C9V1W NE 9.1 8.5.9.6 5 15 5 100 1 0.5 6 BZT52C10W NF 10 9.4.10.6 5 20 5 150 1 0.2 7 BZT52C11W NH 11 10.4.11.65 20 5 150 1 0.1 8 BZT52C12W NJ 12 11.4.12.75 25 5 150 1 0.1 8 BZT52C13W NK 13 12.4.14.15 30 5 170 1 0.1 8 BZT52C15W NM 15 13.8.15.65 30 5
7、200 1 0.1 10.5 BZT52C16W NN 16 15.3.17.15 40 5 200 1 0.1 11.2 BZT52C18W NP 18 16.8.19.15 45 5 225 1 0.1 12.6 BZT52C20W NR 20 18.8.21.25 55 5 225 1 0.1 14 BZT52C22W NX 22 20.8.23.35 55 5 250 1 0.1 15.4 BZT52C24W NY 24 22.8.25.65 70 5 250 1 0.1 16.8 BZT52C27W NZ 27 25.1.28.92 80 2 300 0.5 0.1 18.9 BZT
8、52C30W PA 30 28.32 2 80 2 300 0.5 0.1 21 BZT52C33W PB 33 31.35 2 80 2 325 0.5 0.1 23.1 BZT52C36W PC 36 34.38 2 90 2 350 0.5 0.1 25.2 BZT52C39W PD 39 37.41 2 130 2 350 0.5 0.1 27.3 BZT52C43W 6A 43 40.46 2.5 130 2 500 1 2 33 BZT52C47W 6B 47 44.50 2.5 150 2 500 1 2 36 BZT52C51W 6C 51 48.54 2.5 180 2 50
9、0 1 1 39 BZT52C56W 6D 56 52.60 2.5 180 2 500 1 1 43 BZT52C62W 6E 62 58.66 2.5 200 2 500 1 0.2 47 BZT52C68W 6F 68 64.72 2.5 250 2 500 1 0.2 52 BZT52C75W 6H 75 70.79 2.5 300 2 500 1 0.2 57 1) V ZT is tested with pulses (20 ms). SEMTECH Dated：20/06/2013 Rev：02 SEMTECH ELECTRONICS LTD. Subsidiary of Sin
10、o-Tech International (BVI) Limited BZT52CW Iz 0 0 1020 Vz 30 40 V 8 mA Test current Iz 5mA 10 20 30 0 Breakdown characteristics Tj = constant (pulsed) 0123 Test current Iz 5mA 10 20 4576 Vz Tj=25 C o 109V Iz 30 40 Breakdown characteristics Tj = constant (pulsed) Tj=25 C 50 mA o 2V7 3V3 3V9 4V7 5V6 6
11、V8 8V2 10 12 15 18 22 27 33 Ambient Temperature: Ta ( C) O 025100150 0 200 400 600 Power Dissipation: Ptot (mW) Power Dissipation vs Ambient Temperature 5075125 500 300 100 SEMTECH Dated：20/06/2013 Rev：02 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited BZT52CW PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 E mm UNIT A b c DEHv ALL ROUND D b c A A H HE p p E 1.15 1.05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.85 3.55 0.2 O 5 SEMTECH