ADL5571ACPZ-R7中文资料.docx

上传人:rrsccc 文档编号:9832359 上传时间:2021-03-29 格式:DOCX 页数:35 大小:25.07KB
返回 下载 相关 举报
ADL5571ACPZ-R7中文资料.docx_第1页
第1页 / 共35页
ADL5571ACPZ-R7中文资料.docx_第2页
第2页 / 共35页
ADL5571ACPZ-R7中文资料.docx_第3页
第3页 / 共35页
ADL5571ACPZ-R7中文资料.docx_第4页
第4页 / 共35页
亲,该文档总共35页,到这儿已超出免费预览范围,如果喜欢就下载吧!
资源描述

《ADL5571ACPZ-R7中文资料.docx》由会员分享,可在线阅读,更多相关《ADL5571ACPZ-R7中文资料.docx(35页珍藏版)》请在三一文库上搜索。

1、ADL5571ACPZ-R7中文资料2.5 GHz to 2.7 GHzWiMAX Power AmplifierADL5571 Rev. 0Information furnished by Analog Devices is believed to be accurate and reliable. However, noresponsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may r

2、esult from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, M

3、A 02062-9106, U.S.A. Tel: 781.329.4700 http:/ Fax: 781.461.3113 ?2021 Analog Devices, Inc. All rights reserved.FEATURESGain: 29 dBOperation from 2.5 GHz to 2.7 GHzEVM 3% with 16 QAM OFDMA P OUT = 25 dBm (3.3 V, 2.6 GHz) P OUT = 27 dBm (5 V, 2.6 GHz)Input matched to 50 Power supply: 3.2 V to 5 VQuies

4、cent current: 135 mAPower-added efficiency (PAE)21% P OUT = 25 dBm (3.3 V, 2.6 GHz)Multiple operating modes to reduce battery drain Standby mode: 9 mASleep mode: APPLICATIONSWiMAX mobile terminals and CPEs GENERAL DESCRIPTIONThe ADL5571 is a high linearity 2.5 GHz to 2.7 GHz power amplifier designed

5、 for WiMAX mobile terminals and CPEs using TDD operation at a duty cycle of 50% or lower. With a gain of 29 dB and an output compression point of 31 dBm, it can operate at an output power level up to 27 dBm while maintaining an EVM of 3% with a supply voltage of 5 V. PAE is 21% at P OUT = 25 dBm wit

6、h a 3.3 V supply voltage.The ADL5571 RF input is matched to provide an input return loss of better than 10 dB. The open-collector output is externally matched with a microstrip line and an external shunt capacitor. The ADL5571 operates over a supply voltage range from 3.2 V to 5 V with a current of

7、450 mA burst rms when delivering25 dBm (3.3 V supply). A standby mode is available that reduces the quiescent current to 9 mA, which is useful when a TDD terminal is receiving data.The ADL5571 is fabricated in a GaAs HBT process and is packaged in a 4 mm 4 mm, 16-lead, Pb-free, RoHS-compliant LFCSP

8、that uses an exposed paddle for excellent thermal impedance. It operates from ?40C to +85C.FUNCTIONAL BLOCK DIAGRAMSTBYVREGRFINFigure 1.ADL5571 Rev. 0 | Page 2 of 16TABLE OF CONTENTSFeatures.1 Applications.1 General Description.1 Functional Block Diagram.1 Revision History.2 Specifications.3 V CC =

9、3.3 V.3 V CC = 5 V.4 Absolute Maximum Ratings.5 ESD Caution.5 Pin Configuration and Function Descriptions.6 Typical Performance Characteristics.7 V CC = 3.3 V.7 V CC = 5 V.9 Applications Information.11 Basic Connections.11 64 QAM OFDMA Performance.12 Power-Added Efficiency.12 Evaluation Board.13 Mea

10、surement Setup.14 Outline Dimensions.15 Ordering Guide. (15) REVISION HISTORY1/08Revision 0: Initial Version ADL5571 Rev. 0 | Page 3 of 16SPECIFICATIONSV CC = 3.3 VT = 25C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz channel BW , f = 2.6 GHz, Z L = 50 , STBY = 0 V , VREG = 2.85 V , 31% duty cyc

11、le, ACPR integration BW = 100 kHz (5.05 MHz offset) or 1 MHz (6.5 MHz, 11 MHz, 15 MHz, and 20.5 MHz offset), unless otherwise noted. Table 1.ParameterConditionsMin Typ Max Unit FREQUENCY RANGE See Table 5 for tuning details2.5 2.7 GHz LINEAR OUTPUT POWEREVM 3%25 dBmGA N 29 dBvs. Frequency 5 MHz 0.2

12、dB vs. Temperature ?40C T A +85C 2 dB vs. Supply 3.2 V to 4.2 V 0.3 dB OUTPUT P1dB Unmodulated pulse input 31 dBm EVM P OUT = 25 dBm 3 % rms INPUT RETURN LOSS 20 dB ACPR P OUT = 25 dBm 5.05 MHz carrier offset ?27 dBm 6.5 MHz carrier offset ?19 dBm 11 MHz carrier offset ?24 dBm 15 MHz carrier offset

13、?30 dBm 20.5 MHz carrier offset ?39 dBm HARMONIC DISTORTION 45 dBc SUPPLY CURRENT P OUT = 25 dBm 450 mA QUIESCENT CURRENT No signal at RF input 135 mA PAE P OUT = 25 dBm 21 % STANDBY MODE CURRENT VREG = 2.85 V, STBY = 2.5 V 9 mA SLEEP MODE CURRENT VREG = 0 V 10:1 ADL5571 Rev. 0 | Page 4 of 16V CC =

14、5 VT = 25C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz channel BW , f = 2.6 GHz, Z L = 50 , STBY = 0 V , VREG = 2.85 V , 31% duty cycle, ACPR integration BW = 100 kHz (5.05 MHz offset) or 1 MHz (6.5 MHz, 11 MHz, 15 MHz, and 20.5 MHz offset), unless otherwise noted. Table 2.Parameter Conditions

15、 Min Typ Max UnitFREQUENCY RANGE See Table 5 for tuning details 2.5 2.7 GHz LINEAR OUTPUT POWER EVM 3%27 dBm GA N 27.5 dB vs. Frequency 5 MHz 0.1 dB vs. Temperature ?40C T A +85C 2.5 dB vs. Supply 4.5 V to 5.5 V 0.2 dB OUTPUT P1dB Unmodulated input 32 dBm EVM P OUT = 27 dBm 3 % rms INPUT RETURN LOSS

16、 P OUT = 27 dBm 16 dB ACPR P OUT = 26.5 dBm 5.05 MHz carrier offset ?28 dBm 6.5 MHz carrier offset ?21 dBm 11 MHz carrier offset ?26 dBm 15 MHz carrier offset ?29 dBm 20.5 MHz carrier offset ?35 dBm HARMONIC DISTORTION P OUT = 27 dBm 47 dBc SUPPLY CURRENT P OUT = 27 dBm 620 mA QUIESCENT CURRENT No s

17、ignal at RF input 135 mA PAE P OUT = 27 dBm 16 % STANDBY MODE CURRENT VREG = 2.85 V, STBY = 2.5 V 9 mA SLEEP MODE CURRENT VREG = 0 V 10:1 ADL5571 Rev. 0 | Page 5 of 16ABSOLUTE MAXIMUM RATINGS Table 3.Parameter RatingSupply VoltageV CC 5.0 VVREG 3 VSTBY 3 VRFOUT (ModulatedNormal Power Mode)129 dBm Ou

18、tput Load VSWR10:1Operating Temperature Range ?40C to +85C Storage Temperature Range?65C to +150C Maximum Solder Reflow Temperature260C (30 sec)1OFDMA carrier, 16 QAM, 10 MHz channel BW, 1024 FFT.Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Thi

19、s is a stressrating only; functional operation of the device at these or anyother conditions above those indicated in the operationalsection of this specification is not implied. Exposure to absolutemaximum rating conditions for extended periods may affectdevice reliability.ESD CAUTION ADL5571 Rev.

20、0 | Page 6 of 16PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 06956-0025VCC16RFIN 7GND 8VREG 15RFOUT 16NC NC = NO CONNECT14RFOUT 13NC9C F L T 110C F L T 211N C 12N C 3G N D4S T B Y2V C C 21N C Figure 2. Pin Configuration Table 4. Pin Function DescriptionsPin No. Mnemonic Description 1, 11, 12, 13, 16

21、NC No Connect. Do not connect these pins. 2 VCC2 This power supply pin should be connected to the supply via a choke circuit (see Figure 19). 3, 7 GND Connected to Ground. 4 STBY When STBY is low (0 V), the device operates in transmit mode. When the radio is receiving data, STBYcan be taken high (2.

22、5 V), reducing the supply current to 9 mA.5 VCC1 Connect to Power Supply.6 RF I N RF Input. 8 VREG When VREG is low, the device goes into sleep mode, reducing the supply current to less than 1 A.When VREG is high (2.85 V), the device operates in its normal transmit mode. When high, VREG draws a bias

23、 current of approximately 9 mA.9, 10 CFLT1, CFLT2 Ground-Referenced Capacitors. These should be connected to reduce bias line noise. 14, 15 RFOUT Unmatched RF Outputs. These parallel outputs are matched to 50 using a microstrip line and shuntcapacitor. The power supply voltage should be connected to

24、 these pins through a choke inductor.Exposed Paddle The exposed paddle should be soldered down to a low impedance ground plane (use multiple vias,at least 9, to stitch together the ground planes) for optimum electrical and thermal performance. Table 5. Operating Modes 1Mnemonic Normal OperationStand

25、by ModeSleep ModeVREG High High Low STBY LowHigh X 1X = dont care. ADL5571 Rev. 0 | Page 7 of 16TYPICAL PERFORMANCE CHARACTERISTICSV CC = 3.3 VT = 25C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz channel BW , Z L = 50 , STBY = 0 V , VREG = 2.85 V , 31% duty cycle, ACPR integration BW = 100 kHz

26、(5.05 MHz offset) or 1 MHz (6.5 MHz, 11 MHz, 15 MHz, and 20.5 MHz offset), unless otherwise noted. 0.10.20.30.40.50.60.70.806956-007P OUT (dBm)C U R R E N T (A ) Figure 3. Burst RMS Current vs. P OUT at 2.5 GHz, 2.6 GHz, and 2.7 GHz 101214161820222426283006956-008P OUT (dBm)E V M (%) Figure 4. EVM v

27、s. P OUT at 2.6 GHz, Temperatures ?40C, +25C, and +85C 101214161820222426283006956-009P OUT (dBm)E V M (%)24681012 Figure 5. EVM vs. P OUT at 2.5 GHz, 2.6 GHz, and 2.7 GHz 2224262830323406956-010FREQUENCY (MHz)G A I N (d B ) Figure 6. Gain vs. Frequency at P OUT = 25 dBm, Temperatures ?40C, +25C, an

28、d +85C ADL5571 Rev. 0 | Page 8 of 162224262830323406956-011P OUT (dBm)G A I N (d B ) Figure 7. Gain vs. P OUT at 2.6 GHz, Temperatures ?40C, +25C, and +85C 605040302055453525151006956-012P OUT (dBm)A C P R(d B m )1012141618202224262830 Figure 8. ACPR Measurement at 2.5 GHz605040302055453525151006956

29、-013P OUT (dBm)A C P R (dB m) Figure 9. ACPR Measurement at 2.6 GHz 6050403020554535251510A C P R (d B m )06956-014P OUT (dBm) Figure 10. ACPR Measurement at 2.7 GHz ADL5571 Rev. 0 | Page 9 of 16V CC = 5 VT = 25C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz channel BW , Z L = 50 , STBY = 0 V ,

30、VREG = 2.85 V , 31% duty cycle, ACPR integration BW = 100 kHz (5.05 MHz offset) or 1 MHz (6.5 MHz, 11 MHz, 15 MHz, and 20.5 MHz offset), unless otherwise noted. 0.10.20.30.40.50.60.70.80.906956-015P OUT (dBm)C U R R E N T (A ) Figure 11. Burst RMS Current vs. P OUT at 2.5 GHz, 2.6 GHz, and 2.7 GHz 1

31、4161820222426283006956-016P OUT (dBm)E V M (%) 24681012 Figure 12. EVM vs. P OUT at 2.6 GHz, Temperatures ?40C, +25C, and +85C 14161820222426283006956-017P OUT (dBm)E V M (%)24681012 Figure 13. EVM vs. P OUT at 2.5 GHz, 2.6 GHz, and 2.7 GHz 2224262830323406956-018FREQUENCY (MHz)G A I N (d B ) Figure

32、 14. Gain vs. Frequency at P OUT = 25 dBm, Temperatures ?40C, +25C, and +85C ADL5571 Rev. 0 | Page 10 of 1606956-019P OUT (dBm)G A I N (d B )22242628303234 Figure 15. Gain vs. P OUT at 2.6 GHz, Temperatures ?40C, +25C, and +85C 605040302055453525151006956-020P OUT (dBm)A C P R(d B m )Figure 16. ACPR

33、 Measurement at 2.5 GHz605040302055453525151006956-021P OUT (dBm)A C PR (d B m ) Figure 17. ACPR Measurement at 2.6 GHz 06956-022P OUT (dBm)A C P R (dB m )1416182022242628306050403020554535251510Figure 18. ACPR Measurement at 2.7 GHz ADL5571 Rev. 0 | Page 11 of 16APPLICATIONS INFORMATIONBASIC CONNEC

34、TIONSFigure 19 shows the basic connections for the ADL5571.06956-003NC = NO CONNECT Figure 19. Basic ConnectionsPower SupplyThe voltage supply on the ADL5571, which ranges from3.2 V to4.2 V , should be connected to the VCCx pins. VCC1 is decoupled with Capacitor C7, whereas VCC2 uses a tank circuit

35、to prevent RF signals from propagating on the dc lines.RF Input InterfaceThe RFIN pin is the port for the RF input signal to the power amplifier. The L3 inductor, 2.7 nH, matches the input impedance to 50 .06956-004 Figure 20. RF Input with Matching ComponentRF Output InterfaceThe parallel RF output

36、 ports have a shunt capacitor, C3 (2.7 pF), and the line inductance of the microstrip line for optimized output power and linearity. The characteristics of the ADL5571 are described for 50 impedance after the output matching capacitor (load after C3). C4 provides dc blocking on the RF output.RFOUT R

37、FOUT RFOUT06956-005 Figure 21. RF OutputTransmit/Standby EnableDuring normal transmit mode, the STBY pin is biased low (0 V). However, during receive mode, the pin can be biased high (2.5 V) to shift the device into standby mode, which reduces current consumption to 9 mA.VREG EnableDuring normal tra

38、nsmit, the VREG pin is biased to 2.85 V and draws 9 mA of current. When the VREG pin is low (0 V), the device suspends itself into sleep mode (irrespective of supply biasing). In this mode, the device draws less than 1 A of current.ADL5571 Rev. 0 | Page 12 of 1664 QAM OFDMA PERFORMANCEThe ADL5571 sh

39、ows exceptional performance when used with a higher order modulation scheme, such as a 64 QAM system. Figure 22, Figure 23, and Figure 24 illuminate the EVM, gain, and current consumption performance within the context of a 64 QAM OFDMA system.234567891012131406956-023P OUT (dBm)E V M (%) Figure 22.

40、 EVM vs. P OUT Performance at V CC = 3.3 V and64 QAM OFDMA Signal2627282930313206956-024FREQUENCY (MHz)G A I N (d B)25002520254025602580260026202640266026802700 Figure 23. Gain vs. Frequency Performance at V CC = 3.3 V and64 QAM OFDMA Signal 0.10.20.30.40.50.60.70.806956-025P OUT (dBm)C U R R E N T

41、(A )0510* Figure 24. Burst Current vs. P OUT at V CC = 3.3 V, 64 QAM,2350 MHz, 31% 802.16e OFDMA SignalPOWER-ADDED EFFICIENCYThe efficiency of the ADL5571 is defined on the current that it draws during the data burst of an 802.16e OFDMA signal. In typical test setup, the average rms current, I AVG , is measured. However,I AVG = Duty Cycle (in decimal) I BURST + (1 ? Duty Cycle in decimal) I DEFAULTwhere:I BURST is

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 社会民生


经营许可证编号:宁ICP备18001539号-1