S40xxxH中文资料.docx

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1、S40xxxH中文资料S40xxxH?January 1995SCRSymbol ParameterValue Unit I T(RMS)RMS on-state current (180conduction angle)Tc=85C 40A I T(AV)Average on-state current (180conduction angle)Tc=85C 25A I TSMNon repetitive surge peak on-state current (T j initial =25C )tp =8.3ms 415Atp =10ms 380I 2t I 2t Value for f

2、usingtp =10ms722A 2s dI/dt Critical rate of rise of on-state current I G =100mA di G /dt =1A/s.100A/s T stg T j Storage and operating junction temperature range -40,+150-40,+125C TlMaximum lead temperature for soldering during 10s at 4.5mm from case260C ABSOLUTE RATINGS (limiting values)TO220non-ins

3、ulated (Plastic)I T(RMS)=40AV DRM =200V to 800VHigh surge current capabilityFEATURESSymbol ParameterVoltage Unit BD M N V DRM V RRMRepetitive peak off-state voltage T j =125C200400600800VThe S40xxxH series of SCRs uses a high performance MESA GLASS PNPN technology.These parts are intended for genera

4、l purpose applications.DESCRIPTIONK GA1/5P G (AV)=1W P GM =10W (tp =20s)I GM =4A (tp =20s)GATE CHARACTERISTICS (maximum values)Symbol ParameterValue Unit Rth(j-a)Junction to ambient 60C/W Rth(j-c)Junction to case for DC1.1C/WTHERMAL RESISTANCES Symbol Test ConditionsSensitivityUnit1416I GTV D =12V (

5、DC)R L =33?Tj=25CMIN 3020mA MAX7550V GT V D =12V (DC)R L =33?Tj=25C MAX 1.5V V GD V D =V DRM R L =3.3k ?Tj=125CMIN 0.2V tgt V D =V DRM I TM =3x I T(AV )dI G /dt =1.5A/s I G =200mA Tj=25C TYP 2s I H I T =500mA Gate open Tj=25C MAX 115100mA I L I G =1.2I GTTj=25C MAX 230200mA V TM I TM =80A tp=380s Tj

6、=25C MAX 1.6V I DRM I RRM V D =V DRM V R =V RRMTj=25C MAX 10A Tj=110C MAX 3mA dV/dt V D =67%V DRM Gate open Tj=110C MIN 750500V/s tqI TM =3x I T(AV )V R =35V dI/dt=25A/s tp=100s dV/dt=25V/s V D =67%V DRMTj=110CMAX100s ELECTRICAL CHARACTERISTICS ORDERING INFORMATIONS4016M HSCR MESA GLASSCURRENTPACKAG

7、E :H =TO220Non-insulated VOLTAGESENSITIVITYS40xxxH2/5 510152025303540010203040P (W)360O=180o=120o=90o=60o=30oDC I (A)T(AV)Fig.1:Maximum average power dissipation ver-sus average on-state current.0102030405060708090100110120130 1020304050I (A)T(AV)=180oDCTcase (C)oFig.3:Average on-state current versu

8、s case tem-perature.2.62.42.22.01.81.61.41.21.00.80.60.4IgtTj(C)o Ih-40-20020406080100120140IgtTjIgtTj=25CoIhTjIhTj=25CoFig.5:Relative variation of gate trigger current and holding current versus junction temperature. 20406080100120140010203040-80-90-100-110-120P (W)Tcase (C)o =180oTamb (C)oRth =0C/

9、W0.5C/W 1C/W 1.5C/Wo o oo Fig.2:Correlation between maximum average power dissipation and maximum allowable tem-perature (Tamb and Tcase)for different thermal resistances heatsink +contact.1E-31E-21E-11E+01E+11E+25E+20.010.11Zth/Rth Zth(j-c)Zth(j-a)tp(s)Fig.4:Relative variation of thermal impedance

10、versus pulse duration.11010010000100200300400Tj initial =25CoNumber of cyclesI (A)TSM Fig.6:Non repetitive surge peak on-state current versus number of cycles.S40xxxH3/511010010002000I (A).I 2t (A 2s)TSM Tj initial =25Co I TSMtp(ms)I 2tFig.7:Non repetitive surge peak on-state current for a sinusoida

11、l pulse with width :tp 10ms,and corresponding value of I 2t. 0.51 1.52 2.53 3.541101001000I (A)TM Tj initial25Co Tj maxV (V)TM Tj max Vto =0.92V Rt =0.0078Fig.8:On-state characteristics (maximum values).S40xxxH4/5Information furnished is believed to be accurate and reliable.However,SGS-THOMSON Micro

12、electronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics

13、.Specifications mentioned in this publication are subject to chan ge without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express

14、written approval of SGS-THOMSON Microelectronics.?1995SGS-THOMSON Microelectronics -All rights reserved.SGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia -Brazil -France -Germany -Hong Kong -Italy -Japan -Korea -Malaysia -Malta -Morocco -The NetherlandsSingapore -Spain -Sweden -Switzerland -T

15、aiwan -Thailand -United Kingdom -U.S.A.PACKAGE MECHANICAL DATA TO220Non-insulated (Plastic)D G IHJB ALN1MNO PCFREF.DIMENSIONSMillimeters Inches Typ.Min.Max.Typ.Min.Max.A 10.30.406B 6.3 6.50.2480.256C 9.10.358D 12.70.500F 4.20.165G3.00.118H4.5 4.70.1770.185I 3.53 3.660.1390.144J 1.2 1.30.0470.051L 0.90.035M 2.70.106N 5.30.209N1 2.540.100O 1.21.40.0470.055P1.150.045Marking :type number Weight :1.8gS40xxxH5/5

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