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1、BRITISH STANDARD BS EN 62276:2005 Single crystal wafers for surface acoustic wave (SAW) device applications Specifications and measuring methods The European Standard EN 62276:2005 has the status of a British Standard ICS 31.140 ? Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38 GMT+0
2、0:00 2006, Uncontrolled Copy, (c) BSI BS EN 62276:2005 This British Standard was published under the authority of the Standards Policy and Strategy Committee on 14 February 2006 BSI 14 February 2006 ISBN 0 580 47074 1 National foreword This British Standard is the official English language version o
3、f EN 62276:2005. It is identical with IEC 62276:2005. It supersedes PD IEC/PAS 62276:2002 which is withdrawn. The UK participation in its preparation was entrusted to Technical Committee EPL/49, Piezo-electric devices for frequency control and selection, which has the responsibility to: A list of or
4、ganizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which implement international or European publications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Corr
5、espondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not
6、 of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on the interpretation, or proposals for change, and keep UK interests informed; monitor related international and European developments a
7、nd promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 34, an inside back cover and a back cover. The BSI copyright notice displayed in this document indicates when the document was last issued. Amendments issued sin
8、ce publication Amd. No. DateComments Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EUROPEAN STANDARD EN 62276 NORME EUROPENNE EUROPISCHE NORM December 2005 CENELEC European Committee for Electrotechnical Standardization Comit Europen de No
9、rmalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2005 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 62276:2005 E ICS 31.140 English version
10、Single crystal wafers for surface acoustic wave (SAW) device appplications - Specifications and measuring methods (IEC 62276:2005) Tranches monocristallines pour applications utilisant des dispositifs ondes acoustiques de surface - Spcifications et mthodes de mesure (CEI 62276:2005) Einkristall-Wafe
11、r fr Oberflchenwellen- (OFW-)Bauelemente - Festlegungen und Messverfahren (IEC 62276:2005) This European Standard was approved by CENELEC on 2005-11-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the
12、status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in two official versions (English, German). A ver
13、sion in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, Czech Repu
14、blic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia, Spain, Sweden, Switzerland and United Kingdom. Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38
15、GMT+00:00 2006, Uncontrolled Copy, (c) BSI Foreword The text of document 49/720/FDIS, future edition 1 of IEC 62276, prepared by IEC TC 49, Piezoelectric and dielectric devices for frequency control and selection, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 62276
16、 on 2005-11-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2006-08-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2008-
17、11-01 Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 62276:2005 was approved by CENELEC as a European Standard without any modification. _ EN 62276:2005 2 Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38 GMT+00:00 2006, Uncontrolled
18、 Copy, (c) BSI 3 EN 62276:2005 CONTENTS INTRODUCTION.5 1 Scope 6 2 Normative references .6 3 Terms and definitions .6 4 Requirements.12 4.1 Material specification.12 4.2 Wafer specifications 12 5 Sampling15 5.1 Sampling.15 5.2 Sampling frequency.16 5.3 Inspection of whole population.16 6 Test method
19、s .16 6.1 Diameter .16 6.2 Thickness16 6.3 Dimension of OF16 6.4 Orientation of OF.16 6.5 TV5.16 6.6 Warp .17 6.7 TTV.17 6.8 Front surface defects.17 6.9 Inclusions17 6.10 Back surface roughness.17 6.11 Orientation 17 6.12 Curie temperature17 6.13 Lattice constant.17 7 Identification, labelling, pac
20、kaging, delivery condition17 7.1 Packaging .17 7.2 Labelling and identification 17 7.3 Delivery condition18 8 Measurement of Curie temperature .18 8.1 General.18 8.2 DTA method 18 8.3 Dielectric constant method.18 9 Measurement of lattice constant (Bond method) 19 10 Measurement of face angle by X-
21、ray .20 10.1 Measurement principle.20 10.2 Measurement method 21 10.3 Measuring surface orientation of wafer.21 10.4 Measuring OF flat orientation.21 10.5 Typical wafer orientations and reference planes .22 11 Visual inspections.22 11.1 Front surface inspection method 22 Licensed Copy: sheffieldun s
22、heffieldun, na, Sat Nov 11 01:51:38 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 62276:2005 4 Annex A (normative) Expression using Euler angle description for piezoelectric single crystals.23 A.1 Wafer orientation using Euler angle description.23 Annex B (informative) Manufacturing process for SAW
23、wafers 26 B.1 Crystal growth methods 26 B.2 Standard mechanical wafer manufacturing 30 Annex ZA (normative) Normative references to international publications with their corresponding European publications34 Bibliography .32 Figure 1 Wafer sketch and measurement points for TV5 determination8 Figure
24、2 Schematic diagram of TTV9 Figure 3 Schematic diagram of warp.9 Figure 4 Example of site distribution for LTV measurement. All sites have their centres within the FQA10 Figure 5 LTV is a positive number and is measured at each site .10 Figure 6 Schematic of a DTA system18 Figure 7 Schematic of a di
25、electric constant measurement system .19 Figure 8 The Bond method.20 Figure 9 Measurement method by X- ray .21 Figure 10 Relationship between cut angle and lattice face 21 Figure A.1 Definition of Euler angles to rotate coordinate system (X,Y,Z) onto (x1, x2, x3)23 Figure A.2 SAW wafer coordinate sy
26、stem .24 Figure A.3 Relationship between the crystal axes, Euler angles, and SAW orientation for some wafer orientations.25 Figure B.1 Czochralski crystal growth method.26 Figure B.2 Example of non- uniformity in crystals grown from different starting melt compositions 28 Figure B.3 Schematic of a v
27、ertical Bridgman furnace and example of temperature distribution .29 Table 1 Description of wafer orientations11 Table 2 Roughness, warp, TV5 and TTV specification limits14 Table 3 Crystal planes to determine surface and OF orientations 22 Table A.1 Selected SAW substrate orientations and correspond
28、ing Euler angles.24 Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38 GMT+00:00 2006, Uncontrolled Copy, (c) BSI 5 EN 62276:2005 INTRODUCTION A variety of piezoelectric materials are used for surface acoustic wave (SAW) filter and resonator applications. Prior to the 1996 Rotterdam IEC
29、 TC 49 meeting, wafer specifications were typically negotiated between users and suppliers. During the meeting a proposal was announced to address wafer standardization. This document has been prepared in order to provide industry standard technical specifications for manufacturing piezoelectric sin
30、gle crystal wafers to be used in surface acoustic wave devices. Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 62276:2005 6 SINGLE CRYSTAL WAFERS FOR SURFACE ACOUSTIC WAVE (SAW) DEVICE APPLICATIONS SPECIFICATIONS AND MEASURING METHODS 1
31、Scope This International Standard applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filte
32、rs and resonators. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 607
33、58, Synthetic quartz crystal Specifications and guide to the use IEC 60410, Sampling plans and procedures inspection by attributes ISO 4287, Geometrical Product Specifications (GPS) Surface texture: Profile method Terms, definitions and surface texture parameters 3 Terms and definitions For the purp
34、oses of this document, the following terms and definitions apply. 3.1 Single crystals for SAW wafer 3.1.1 as-grown synthetic quartz crystal right- handed or left- handed single crystal quartz is grown hydrothermally. The term “as- grown” indicates a state prior to mechanical fabrication NOTE See IEC
35、 60758 for further information concerning crystalline quartz. 3.1.2 lithium niobate LN single crystals approximately described by chemical formula LiNbO3, grown by Czochralski (crystal pulling from melt) or other growing methods 3.1.3 lithium tantalate LT single crystals approximately described by c
36、hemical formula LiTaO3, grown by Czochralski (crystal pulling from melt) or other growing methods Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38 GMT+00:00 2006, Uncontrolled Copy, (c) BSI 7 EN 62276:2005 3.1.4 lithium tetraborate LBO single crystals described by the chemical formula
37、 to Li2B4O7, grown by Czochralski (crystal pulling from melt), vertical Bridgman, or other growing methods 3.1.5 lanthanum gallium silicate LGS single crystals described by the chemical formula to La3Ga5SiO14, grown by Czochralski (crystal pulling from melt) or other growing methods 3.2 manufacturin
38、g lot established by agreement between customer and supplier 3.3 Terms and definitions related to LN and LT crystals 3.3.1 Curie temperature Tc phase transition temperature between ferroelectric and paraelectric phases measured by differential thermal analysis (DTA) or dielectric measurement 3.3.2 s
39、ingle domain ferroelectric crystal with uniform electrical polarization throughout (for LN and LT) 3.3.3 polarization (or poling) process electrical process used to establish a single domain crystal 3.4 Terms and definitions related to all crystals 3.4.1 lattice constant length of unit cell along a
40、major crystallographic axis measured by X- ray using the Bond method 3.4.2 congruent composition chemical composition of a single crystal in a thermodynamic equilibrium with a molten solution of the same composition during the growth process 3.4.3 twin crystallographic defect occurring in a single c
41、rystal. NOTE The twin is separated from the rest of the material by a boundary, generally aligned along a crystal plane. The lattices on either side of the boundary are crystallographic mirror images of one another. 3.5 orientation flat OF flat portion of wafer perimeter indicating the crystal orien
42、tation. Generally, the orientation flat corresponds to the SAW propagation direction. It is also referred to as the “primary flat” (see Figure 1) Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38 GMT+00:00 2006, Uncontrolled Copy, (c) BSI EN 62276:2005 8 3.6 secondary flat SF flat port
43、ion of wafer perimeter shorter than the OF. When present, the SF indicates wafer polarity and can serve to distinguish different wafer cuts. It is also referred to as the “sub- orientation flat” (see Figure 1) 3.7 Flatness 3.7.1 fixed quality area FQA central area of a wafer surface, defined by a no
44、minal edge exclusion, X, over which the specified values of a parameter apply NOTE The boundary of the FQA is at all points (e.g. along wafer flats) the distance X away from the perimeter of the wafer of nominal dimensions. 3.7.2 reference plane depends on the flatness measurement and needs to be sp
45、ecified. It can be any of the following: a) for clamped measurements, the flat chuck surface that contacts the back surface of the wafer; b) three points at specified locations on the front surface within the FQA; c) the least- squares fit to the front surface using all measured points within the FQ
46、A; d) the least squares fit to the front surface using all measured points within one site. 3.7.3 site square area on the front surface of the wafer with one side parallel to the OF. Flatness parameters are assessed either globally for the FQA, or for each site individually 3.7.4 TV5 (thickness vari
47、ation for five points) TV5 is a measure of wafer thickness variation and is defined as the maximum difference between five thickness measurements. Thickness is measured at the centre of the wafer and at four peripheral points shown in Figure 1 Index flat 6 mm Orientation flat 1 245 3 IEC 552/05 Figu
48、re 1 Wafer sketch and measurement points for TV5 determination Licensed Copy: sheffieldun sheffieldun, na, Sat Nov 11 01:51:38 GMT+00:00 2006, Uncontrolled Copy, (c) BSI 9 EN 62276:2005 3.7.5 total thickness variation (TTV) measurement of TTV is performed under clamped conditions with the reference
49、plane as defined in 3.7.2 a). TTV is the difference between maximum thickness (A) and the minimum thickness (B) as shown in Figure 2 A B Reference plane | back surface IEC 553/05 Figure 2 Schematic diagram of TTV 3.7.6 warp warp describes the deformation of an unclamped wafer and is defined as the maximum difference between a point on the front surface and a reference pl