《BS-QC-750107-1991.pdf》由会员分享，可在线阅读，更多相关《BS-QC-750107-1991.pdf（18页珍藏版）》请在三一文库上搜索。
1、BRITISH STANDARD BS QC 750107:1991 IEC 747-7-4: 1991 Specification for Harmonized system of quality assessment for electronic components Semiconductor discrete devices Blank detail specification Case-rated bipolar transistors for high-frequency amplifications Licensed Copy: London South Bank Univers
2、ity, London South Bank University, Fri Dec 08 17:07:12 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750107:1991 BSI 12-1999 ISBN 0 580 35532 2 Amendments issued since publication Amd. No.DateComments Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:12 G
3、MT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750107:1991 BSI 12-1999i Contents Page National forewordii Introduction1 1Mechanical description2 2Short description2 3Categories of assessed quality2 4Limiting values (absolute maximum rating system)2 5Electrical characteristics3 6Marking6 7Ordering i
4、nformation6 8Test conditions and inspection requirements6 9Group D Qualification approval tests12 10Additional information (not for inspection purposes)12 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:12 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 7
5、50107:1991 ii BSI 12-1999 National foreword This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee, ECL/-. It is identical with IEC Publication 747-7-4:1991: QC 750107 “Semiconductor devices Discrete devices Part 7: Bipolar transistors Sec
6、tion 4: Blank detail specification for case-rated bipolar transistors for high-frequency amplification” published by the International Electrotechnical Commission (IEC). Cross-references The British Standard harmonized with QC 001001 and QC 001002 is BS 9000 “General requirements for a system for el
7、ectronic components of assessed quality”. There is no corresponding British Standard for IEC 191, but BS 3934 “Specification for dimensions of semiconductor devices and integrated electronic circuits” is a related standard. A British Standard does not purport to include all the necessary provisions
8、of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. International Standarda Corresponding British Standard IEC 68-2-17:1978BS 2011 Environmental testing Part 2.1Q:1981 T
9、est Q. Sealing (Identical) BS 6493 Semiconductor devices Part 1: Discrete devices IEC 747-1:1983Section 1.1:1984: General (Identical) IEC 747-2:1983Section 1.2:1984 Recommendations for rectifier diodes (Identical) IEC 747-7:1988Section 1.7:1989 Recommendations for bipolar transistors (Identical) IEC
10、 747-10/QC 700000:1991BS QC 700000:1991 Harmonized system of quality assessment for electronic components. Semiconductor devices. Generic specification discrete devices and integrated circuits (Identical) IEC 747-11/QC 750000:1985BS QC 750000:1986 Harmonized system of quality assessment for electron
11、ic components. Discrete semiconductor devices. Sectional specification (Identical) IEC 749:1984BS 6493: Semiconductor devices Part 3:1985 Mechanical and climatic test methods (Identical) a Some standards are undated in the text Summary of pages This document comprises a front cover, an inside front
12、cover, pages i and ii, pages 1 to 12 and a back cover. This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Licensed Copy: London South Bank University, London South Bank University, Fri
13、 Dec 08 17:07:12 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750107:1991 BSI 12-19991 Introduction The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define qualit
14、y assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank detail specificati
15、on is one of a series of blank detail specifications for semiconductor devices and shall be used with the following IEC publications: 747-10/QC 700000:1991, Semiconductor devices Part 10: Generic specification for discrete devices and integrated circuits. 747-11/QC 750100:1985, Semiconductor devices
16、 Part 11: Sectional specification for discrete devices. Required information Numbers shown in brackets on this and the following pages correspond to the following items of required information, which should be entered in the spaces provided. Identification of the detail specification 1 The name of t
17、he National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any further in
18、formation required by the national system. Identification of the component 5 Type of component. 6 Information on typical construction and applications. If a device is designed to satisfy several applications, this shall be stated here. Characteristics, limits and inspection requirements for these ap
19、plications shall be met. If a device is electrostatic sensitive, or contains hazardous material, e.g. beryllium oxide, a caution statement shall be added in the detail specification. 7 Outline drawing and/or reference to the relevant standard for outlines. 8 Category of assessed quality. 9 Reference
20、 data on the most important properties to permit comparison between component types. Throughout this standard, the texts given in square brackets are intended for guidance to the specification writer and should not be included in the detail specification. Throughout this standard, when a characteris
21、tic or rating applies, “” denotes that a value shall be inserted in the detail specification. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:12 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750107:1991 2 BSI 12-1999 4 Limiting values (absolute maximum
22、rating system) These values apply over the operating temperature range unless otherwise specified. Repeat only subclause numbers used, with the title. Any additional values should be given at the appropriate place, but without subclause number(s). Curves should preferably be given under clause 10 of
23、 this standard. Name (address) of responsible NAI (and possibly of body from which specification is available). 1Number of IECQ detail specification plus issue number and/or date. QC 750107-XXX 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication 747-10/Q
24、C 700000 Sectional specification: Publication 747-11/QC 750100 and national references if different. 3National number of detail specification. This box need not be used if the National number repeats IECQ number. 4 DETAIL SPECIFICATION FOR: Type number(s) of the relevant device(s). Ordering informat
25、ion: see clause 7 of this standard. 5 1 Mechanical description2 Short description Outline references: IEC 191-2. mandatory if available and/or national if there is no IEC outline. 7Case-rated bipolar transistor for high-frequency amplification NPN/PNP. Semiconductor material: Si Encapsulation: cavit
26、y or non-cavity. 6 Outline drawing may be transferred to or given with more details in clause 10 of this standard. Terminal identification drawing showing pin assignments including graphical symbols. 3 Categories of assessed quality from subclause 2.6 of the generic specification. 8 Marking: letters
27、 and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See subclause 2.5 of the generic specification and/or clause 6 of this standard. Polarity indication, if a special method is used. Reference data9 Information about manufacturer
28、s who have components qualified to this detail specification is available in the current Qualified Products List. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:12 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750107:1991 BSI 12-19993 5 Electrical char
29、acteristics See clause 8 of this standard for inspection requirements. Repeat only subclause numbers used, with title. Any additional characteristics should be given at the appropriate place but without subclause number. When several devices are defined in the same detail specification, the relevant
30、 values should be given on successive lines, avoiding repeating identical values. SubclauseParametersSymbol Value min.max. 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 4.9.1 Operating case temperatures Storage temperatures One or more of the following shall be specified: Maximum continuous (direct) collector
31、-base voltage Maximum continuous (direct) collector-emitter voltage with reverse base voltage Maximum continuous (direct) collector-emitter voltage with base short-circuited to emitter Maximum continuous (direct) collector-emitter voltage and/or: Maximum continuous (direct) collector-emitter voltage
32、 with specified external resistance RBE Maximum emitter-base continuous (direct) reverse voltage Either: Maximum collector current (d.c. or mean value) or: Maximum emitter current (d.c. or mean value) Either: Maximum repetitive peak collector current or: Maximum repetitive peak emitter current Maxim
33、um base current (d.c. or mean value) Power dissipation: Maximum total power dissipation as a function of temperature or: Tcase Tstg VCBO VCEX VCES VCEO VCER VEBO IC or IC(AV) IE or IE(AV) ICM IEM IB or IB(AV) 4.9.2 4.10 4.11 Maximum virtual (equivalent) junction temperature, and absolute limit of po
34、wer dissipation Area of safe operation (for example, curves Ic versus VCE) d.c. and, where appropriate, pulse Where appropriate, endurance to mismatch under specified conditions t(vj) Ptot t Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:12 GMT+00:00 2006
35、, Uncontrolled Copy, (c) BSI BS QC 750107:1991 4 BSI 12-1999 Curves should preferably be given under clause 10 of this standard. Subclause Characteristics and conditions at Tcase= 25 C unless otherwise specified (see clause 4 of the generic specification) Symbol Value Tested min.max. 5.1 5.2 5.3 5.4
36、 5.4.1 5.4.2 5.4.3 5.4.4 5.4.5 Static value of the common-emitter forward current transfer ratio at specified VCE and IC (or VCB and IE), preferably at typical operating current (d.c. or pulse as specified) Where appropriate: Static value of the common-emitter forward current transfer ratio at speci
37、fied low VCE and high IC (d.c. or pulse as specified) Minimum and, where appropriate, maximum transition frequency at specified VCE, IC and f or: Alternatively, minimum and, where appropriate, maximum value of the modulus of the forward scattering parameter at specified VCE, IC, f and load impedance
38、 (preferably 50 7) Cut-off currents: Preferably: Maximum collector-base cut-off current with the emitter open-circuited, preferably at maximum rated VCBO or otherwise: Maximum collector-emitter cut-off current under specified base-emitter bias conditions, preferably at maximum rated VCEX Where appro
39、priate: Maximum collector-emitter cut-off current with specified base-emitter resistance, preferably at maximum rated VCER Where appropriate: Maximum collector-emitter cut-off current with the base short-circuited to the emitter, preferably at maximum rated VCES Where appropriate: Maximum collector-
40、emitter cut-off current with the base open-circuited preferably at maximum rated VCEO Where appropriate: Maximum emitter-base cut-off current with the collector open-circuited, preferably at maximum rated VEBO h21E(1) h21E(2) fT s21e ICBO(1) ICEX(1) ICER(1) ICES(1) ICEO IEBO A2b A3 C2b C2b A2b A2b A
41、2b A2b A2b A2b Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:07:12 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750107:1991 BSI 12-19995 Subclause Characteristics and conditions at Tcase= 25 C unless otherwise specified (see clause 4 of the generic spec
42、ification) Symbol Value Tested min.max. 5.5 5.5.1 5.5.2 5.5.3 5.6 5.7 5.8 5.9 5.9.1 Cut-off currents at a high temperature: At least one or more of the following shall, where appropriate, be specified. The temperature shall be selected from the preferred list in Publication 747-1 Preferably: Maximum
43、 collector-base cut-off current, at VCB preferably between 65 % and 85 % of maximum rated VCBO, IE= 0 and at a high temperature Or otherwise: Maximum collector-emitter cut-off current under specified base-emitter bias conditions, at VCE preferably between 65 % and 85 % of maximum rated VCEX and at a
44、 high temperature Where appropriate: Maximum collector-emitter cut-off current with specified base-emitter resistance, at VCE preferably between 65 % and 85 % of maximum rated VCER and at a high temperature Where appropriate: Maximum collector-emitter cut-off current with the base short-circuited to
45、 the emitter, at VCE preferably between 65 % and 85 % of maximum rated VCES and at a high temperature Maximum collector-emitter saturation voltage at specified IB and high IC (d.c. or pulse as specified) Either: Minimum output power into the load at a specified input power and at a high frequency an
46、d, where appropriate, at another lower frequency, preferably for the same specified conditions of circuit and bias or: Minimum power gain, preferably in the same conditions as for Pout Where appropriate: Minimum efficiency, preferably overall or alternatively, minimum collector efficiency (Note 1),
47、in the same conditions as for Pout in 5.7 Capacitances Maximum output capacitance at specified VCB and f, IE= 0 ICBO(2) ICEX(2) ICER(2) ICES(2) VCEsat Pout GP )tot )C C22b C2b C2b C2b C2b A3 A2b A2b A2b A2b C2a Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:
48、07:12 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750107:1991 6 BSI 12-1999 6 Marking Any particular information other than that given in box 7 (clause 1) and/or subclause 2.5 of the generic specification shall be given here. 7 Ordering information The following minimum information is necessary
49、 to order a specific device, unless otherwise specified: precise type reference (and nominal voltage value, if required); IECQ reference of detail specification with issue number and/or date when relevant; category of assessed quality as defined in subclause 3.7 (clause 111) of the sectional specification and, if required, screening sequence as defined in subclause 3.6 (cl