《IEEE-C62.37.1-2000.pdf》由会员分享，可在线阅读，更多相关《IEEE-C62.37.1-2000.pdf（65页珍藏版）》请在三一文库上搜索。
1、The Institute of Electrical and Electronics Engineers, Inc. 3 Park Avenue, New York, NY 10016-5997, USA Copyright 2001 by the Institute of Electrical and Electronics Engineers, Inc. All rights reserved. Published 18 April 2001. Printed in the United States of America. Print: ISBN 0-7381-2631-4 SH948
2、88 PDF: ISBN 0-7381-2632-2 SS94888 No part of this publication may be reproduced in any form, in an electronic retrieval system or otherwise, without the prior written permission of the publisher. IEEE Std C62.37.1-2000 IEEE Guide for the Application of Thyristor Surge Protective Devices Sponsor Sur
3、ge Protective Devices Committee of the IEEE Power Engineering Society Approved 21 September 2000 IEEE-SA Standards Board Abstract: Applications information on fixed voltage and gated thyristor surge protective devices (SPDs) are provided. Key device parameters and their sensitivities are explained.
4、Several worked telecommunication circuit design examples are given. Keywords: application guide, telecommunication circuits, thyristor surge protection devices IEEE Standards documents are developed within the IEEE Societies and the Standards Coordinating Committees of the IEEE Standards Association
5、 (IEEE-SA) Standards Board. The IEEE develops its standards through a consensus develop- ment process, approved by the American National Standards Institute, which brings together volunteers representing varied viewpoints and interests to achieve the final product. Volunteers are not necessarily mem
6、bers of the Institute and serve with- out compensation. While the IEEE administers the process and establishes rules to promote fairness in the consensus devel- opment process, the IEEE does not independently evaluate, test, or verify the accuracy of any of the information contained in its standards
7、. Use of an IEEE Standard is wholly voluntary. The IEEE disclaims liability for any personal injury, property or other dam- age, of any nature whatsoever, whether special, indirect, consequential, or compensatory, directly or indirectly resulting from the publication, use of, or reliance upon this,
8、or any other IEEE Standard document. The IEEE does not warrant or represent the accuracy or content of the material contained herein, and expressly disclaims any express or implied warranty, including any implied warranty of merchantability or fitness for a specific purpose, or that the use of the m
9、aterial contained herein is free from patent infringement. IEEE Standards documents are supplied “AS IS.” The existence of an IEEE Standard does not imply that there are no other ways to produce, test, measure, purchase, market, or provide other goods and services related to the scope of the IEEE St
10、andard. Furthermore, the viewpoint expressed at the time a standard is approved and issued is subject to change brought about through developments in the state of the art and comments received from users of the standard. Every IEEE Standard is subjected to review at least every five years for revi-
11、sion or reaffirmation. When a document is more than five years old and has not been reaffirmed, it is reasonable to conclude that its contents, although still of some value, do not wholly reflect the present state of the art. Users are cautioned to check to determine that they have the latest editio
12、n of any IEEE Standard. In publishing and making this document available, the IEEE is not suggesting or rendering professional or other services for, or on behalf of, any person or entity. Nor is the IEEE undertaking to perform any duty owed by any other person or entity to another. Any person utili
13、zing this, and any other IEEE Standards document, should rely upon the advice of a com- petent professional in determining the exercise of reasonable care in any given circumstances. Interpretations: Occasionally questions may arise regarding the meaning of portions of standards as they relate to sp
14、ecific applications. When the need for interpretations is brought to the attention of IEEE, the Institute will initiate action to prepare appropriate responses. Since IEEE Standards represent a consensus of concerned interests, it is important to ensure that any interpretation has also received the
15、concurrence of a balance of interests. For this reason, IEEE and the members of its soci- eties and Standards Coordinating Committees are not able to provide an instant response to interpretation requests except in those cases where the matter has previously received formal consideration. Comments f
16、or revision of IEEE Standards are welcome from any interested party, regardless of membership affiliation with IEEE. Suggestions for changes in documents should be in the form of a proposed change of text, together with appropriate supporting comments. Comments on standards and requests for interpre
17、tations should be addressed to: Secretary, IEEE-SA Standards Board 445 Hoes Lane P.O. Box 1331 Piscataway, NJ 08855-1331 USA IEEE is the sole entity that may authorize the use of certification marks, trademarks, or other designations to indicate com- pliance with the materials set forth herein. Auth
18、orization to photocopy portions of any individual standard for internal or personal use is granted by the Institute of Electrical and Electronics Engineers, Inc., provided that the appropriate fee is paid to Copyright Clearance Center. To arrange for payment of licensing fee, please contact Copyrigh
19、t Clearance Center, Customer Service, 222 Rosewood Drive, Danvers, MA 01923 USA; (978) 750-8400. Permission to photocopy portions of any individual standard for educational classroom use can also be obtained through the Copyright Clearance Center. Note: Attention is called to the possibility that im
20、plementation of this standard may require use of subject mat- ter covered by patent rights. By publication of this standard, no position is taken with respect to the existence or validity of any patent rights in connection therewith. The IEEE shall not be responsible for identifying patents for whic
21、h a license may be required by an IEEE standard or for conducting inquiries into the legal validity or scope of those patents that are brought to its attention. Copyright 2001 IEEE. All rights reserved.iii Introduction (This introduction is not part of IEEE Std C62.37.1-2000, IEEE Guide for The Appl
22、ication of Thyristor Surge Protective Devices.) This application guide has been produced as the companion to the IEEE Std C62.37-1996, IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices (SPDs). The thyristor SPD parameters measured in IEEE Std C62.37-1996 are explained in
23、terms of their application relevance and any operating condition sensitivities discussed. Several worked telecommunication circuit design examples are given, together with overviews of system problems, such as SPD coordination. There are a very large number of thyristor SPD variants available. The t
24、wo basic families of fixed-voltage and gated thyristor SPDs are further subdivided into bidirectional and unidirectional types. This guide provides information on these different types and the applications that they are most suited to. Substantive annexes provide information on design approaches, SP
25、D technologies, device symbols, and equipment standards. Participants At the time this guide was completed, the Low-Voltage Solid-State Surge Protective Devices Working Group 3.6.2 had the following membership: Richard Odenberg, Chair Michael J. Maytum, Vice Chair The following members of the ballot
26、ing committee voted on this standard: Stan Bonnesen John Brittain Nisar Chaurdhry Curtis A. Domsch Ernie Gallo Jim Harrison David W. Hutchins Wilhelm H. Kapp Joseph L. Koepfinger Benny H. Lee John A. Siemon Donald B. Turner Dee Unterweger Jonathan Woodworth Donald M. Worden The working group acknowl
27、edges the contributions of the following: Rickard Bentinger, Chrysanthos Chrysanthou, Carl Lindquist, Albert A. Martin Roy W. Alexander Charles L. Ballentine John S. Bonnesen William A. Bush James Case James F. Christensen Chrys Chrysanthou E. P. Dick H. Edward Foelker James Funke Peter A. Goodwin G
28、eorge S. Haralampu Phillip Havens Andrew Robert Hileman David W. Jackson Wilhelm H. Kapp Joseph L. Koepfinger Gerald E. Lee Carl E. Lindquist William A. Maguire Albert R. Martin Michael J. Maytum Nigel P. McQuin Daleep C. Mohla Hans-Wolfgang Oertel Joseph C. Osterhout Carlos O. Peixoto Percy E. Pool
29、 Radhakrishna V. Rebbapragada Thomas J. Rozek John A. Siemon Keith B. Stump Donald B. Turner Arnold Vitols Matthew S. Wakeham Steve G. Whisenant James Jr. Wilson Donald M. Worden Janusz Zawadzki ivCopyright 2001 IEEE. All rights reserved. When the IEEE-SA Standards Board approved this standard on 21
30、 September 2000, it had the following membership: Donald N. Heirman, Chair James T. Carlo, Vice Chair Judith Gorman, Secretary *Member Emeritus Also included is the following nonvoting IEEE-SA Standards Board liaison: Alan Cookson, NIST Representative Donald R. Volzka, TAB Representative Catherine B
31、erger IEEE Standards Project Editor Satish K. Aggarwal Mark D. Bowman Gary R. Engmann Harold E. Epstein H. Landis Floyd Jay Forster* Howard M. Frazier Ruben D. Garzon James H. Gurney Richard J. Holleman Lowell G. Johnson Robert J. Kennelly Joseph L. Koepfinger* Peter H. Lips L. Bruce McClung Daleep
32、C. Mohla James W. Moore Robert F. Munzner Ronald C. Petersen Gerald H. Peterson John B. Posey Gary S. Robinson Akio Tojo Donald W. Zipse Copyright 2001 IEEE. All rights reserved.v Contents 1.Scope 1 2.References 1 3.Definitions . 2 4.Basic function and component description 2 4.1 Basic device struct
33、ure 2 4.2 Device equivalent circuit. 2 4.3 Switching characteristics . 4 4.4 Performance criteria of thyristor SPDs 5 4.5 Additional thyristor SPD structures. 6 5.General terms and definitions 8 5.1 Types of thyristor SPD 8 6.Electrical environment. 10 7.Parameter interpretation and application. 11
34、7.1 Normal system operation parameters 11 7.2 Equipment Protection Parameters 18 7.3 Durability. 27 Annex A (informative) Example designs 32 Annex B (informative) Comparison of dependability definitions. 53 Annex C (informative) SPD technology comparison 54 Annex D (informative) Thyristor SPD symbol
35、s 59 Annex E (informative) Bibliography. 61 This page is intentionally blank. Copyright 2001 IEEE. All rights reserved.1 IEEE Guide for the Application of Thyristor Surge Protective Devices 1. Scope This application guide applies to thyristor surge protective device (thyristor SPD) components used i
36、n systems with voltages up to 1000 Vrms or 1200 V dc. These components are designed to limit overvoltages and divert surge currents by voltage clamping and crowbarring (switching to a low impedance) actions. Although telecommunication circuits are the main application of thyristor SPDs, this guide w
37、ill also provide useful information for other protection applications. This guide is intended to complement the IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices (IEEE C62.37-1996). The definitions used in these two standards are the same. This publication contains inform
38、ation on a)Basic function and component description b)General terms and definitions c)Electrical environment d)Parameter interpretation and application e)Example designs f)SPD technology comparison When used in conjunction with IEEE Std C62.37-1996, this guide will give the user guidance in interpre
39、ting its specifications and in selecting the correct product. 2. References This guide shall be used in conjunction with the following publications: IEC 60050-191 (1990-12): International Electrotechnical Vocabulary (IEV)Chapter 191: Dependability and quality of service.1 1IEC publications are avail
40、able from IEC Sales Department, Case Postale 131, 3, rue de Varemb, CH-1211, Genve 20, Switzerland/Suisse. IEC publications are also available in the United States from the Sales Department, American National Standards Institute, 11 West 42nd Street, 13th Floor, New York, NY 10036, USA. IEEE STD C62
41、.37.1-2000IEEE GUIDE FOR THE 2Copyright 2001 IEEE. All rights reserved. IEC 61000-4-5 (1995-03): Electromagnetic compatibility (EMC)Part 4: Testing and measurement tech- niquesSection 5: Surge immunity test. IEEE C62.37-1996, IEEE Standard Test Specification for Thyristor Diode Surge Protective Devi
42、ces.2 IEEE C62.41-1991 (Reaff 1995), IEEE Recommended Practice on Surge Voltages in Low-Voltage AC Power Circuits. IEEE C62.42-1992 (Reaff 1999), IEEE Guide for the Application of Gas Tube Arrester Low-Voltage (Equal to or Less than 1000Vrms or 1200 Vdc) Surge-Protective Devices. 3. Definitions For
43、the purpose of this guide, the following definition has been used in addition to those in IEEE Std C62.37-1996 and The Authoritative Dictionary of IEEE Standards Terms B83. 3.1 anti-parallel (connection): A parallel combination of two semiconductor elements, where the main current entry electrode of
44、 one element connects to the main current exit electrode of the other element, allowing one element to pass current in one voltage polarity and the other element to pass current in the opposite voltage polarity. (syn: inverse-parallel connection in IEEE 100 B8) 4. Basic function and component descri
45、ption This clause covers the basic device structure, its equivalent circuit, characteristic values, operational parameters, and structures with increased functions. 4.1 Basic device structure Thyristor overvoltage protectors are manufactured by creating a series of N-type and P-type layers in a sili
46、con chip. The basic thyristor structure has three PN junctions that require four layers (NPNP). As one layer can be the starting silicon itself (N or P-type silicon) a further three layers have to be made. Figure 1 shows the simplified structure of a unidirectional thyristor SPD. The switching quadr
47、ant (see Figure 3) occurs when the bottom contact is positive with respect to the top contact. Also shown are the lumped equivalent circuit elements created by the semiconductor layers. This example started manufacture with an N slice of silicon. Layers of P material are then created at the top and
48、the bottom. A further N+ region is then made on the top surface. Finally the top and the bottom metallization are added to provide contacts. The upper right section of the contact metal is not shown in order to illustrate the detail of the topside silicon surface. 4.2 Device equivalent circuit In Fi
49、gure 1, transistor TR1 is formed by the N+PN layers. Similarly transistor TR2 is formed by the PNP layers. The device breakdown voltage is determined by the breakdown of the central NP layers, which form a shared collector-base junction for transistors TR1 and TR2. For clarity, the breakdown function is shown as breakdown diode D1. Resistance R1 is the lateral resistance of the P layer. Resistor R2 together with resistor R1 shunt the base-emitter junction of transistor TR1 to define the value of holding current, IH. 2IEEE C62.41-1991 (Reaff 1995), IEEE Recommended Prac