《SS71A_R01_140205_锂电保护板ic.pdf》由会员分享，可在线阅读，更多相关《SS71A_R01_140205_锂电保护板ic.pdf（18页珍藏版）》请在三一文库上搜索。
1、 Quality Management ITM Semiconductor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A Contents Battery Protect Solution IC 1. FeaturesPage 1 2. OutlinePage 2 3. Pin AssignmentPage 3 4. Block DiagramPage 3 5. Absolute Maximum RatingPage 4 6. Electrical CharacteristicsPage 4 7. Measuring Circ
2、uitPage 9 8. OperationPage 10 1) Overcharge detector (VD1)Page 10 2) Overdischarge detector (VD2)Page 10 3) Discharge overcurrent detector, Short detector (VD3, Short Detector) Page 11 4) Charge overcurrent detectorPage 11 9. Application CircuitPage 12 10. Timing ChartPage 13 11. Packing SpecPage 15
3、 12. Package DescriptionPage 17 13. Recommend Land PatternPage 17 14. Marking ContentsPage 18 Quality Management ITM Semiconductor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A - 1 - Features 1. The protection IC and The Dual-Nch MOSFET to use common Drain are integrated into One-packagin
4、g IC. 2. Reduced Pin-Count by fully connecting internally. 3. Application Part 1) Protection IC Uses high withstand voltage CMOS process. - The charger section can be connected up to absolute maximum rating 28V. Detection voltage precision - Overcharge detection voltage 25 (Ta=25), 45 (Ta=-3070) - O
5、verdischarge detection voltage 70 (Ta=25), 80 (Ta=-3070) - Discharging overcurrent detection voltage 10 (Ta=25), 20 (Ta=-3070) - Charging overcurrent detection voltage 10 (Ta=25), 20 (Ta=-3070) Built-in detection delay times - Overcharge detection delay time 1.000.20s (Ta=25), 1.00+0.50,0.40s (Ta=-3
6、070) - Overdischarge detection delay time) 20.04.0 (Ta=25), 20.0+10.0,8.0 (Ta=-3070) - Discharging overcurrent detection delay time) 12.02.4 (Ta=25), 12.0+6,4.8 (Ta=-3070) - Charging overcurrent detection delay time) 16.63.8 (Ta=25), 16.6+8.4,7.0 (Ta=-3070) - Short detection delay time) 400+160,170
7、(Ta=25), 400+400,220 (Ta=-3070) With abnormal charger detection function. 0V charge function is allowed Auto Wake-up function is allowed 2) FET Using advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V while retaining a 12V VGS(MAX)
8、. The protection for ESD Common drain configuration General characteristics - VDS(V) = 24V - ID(A) = 7A - RSS(ON) 19m (VGS= 3.9V, ID= 1A) - ESD Rating : 2000V HBM Battery Protect Solution IC Quality Management ITM Semiconductor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A - 2 - Outline T
9、his is a battery protect solution IC which is integrated with built-in the protection IC to use a lithium ion/lithium polymer secondary batteries developed for 1-cell series and Dual-Nch MOSFET. It functions to protect the battery by detecting overcharge, overdischarge, discharge overcurrent, charge
10、 overcurrent and other abnormalities as turning off internal Nch MOSFET. The protection IC is composed of four voltage detectors, short detection circuit, reference voltage sources, oscillator, counter circuit and logical circuits. The COUTpin (charge FET control pin) and DOUTpin (discharge FET cont
11、rol pin) outputs are CMOS output, and can drive the internal Nch MOSFET directly. The COUToutput becomes low level after delay time fixed in the IC if overcharge is detected. The DOUToutput becomes low level after delay time fixed in the IC if overdischarge, discharge overcurrent or short is detecte
12、d. On overcharge state, if the VDDvoltage is less than the overcharge release voltage, the COUToutput becomes high level after delay time fixed in the IC. On overdischarge state, if the voltage of the battery rises more than the overdischarge detection voltage with connecting the charger, the DOUTou
13、tput becomes high level after delay time fixed in the IC. Charging current can be supplied to the battery discharged up to 0V. Once discharge overcurrent or short have been detected, if the state of discharge overcurrent or short is released by opening the loads, the DOUToutput becomes high level af
14、ter delay time fixed in the IC. On overdischarge state, the supply current is reduced as less as possible. Once charge overcurrent has been detected, the state of charge overcurrent is released by opening the charger and setting the load. Battery Protect Solution IC Quality Management ITM Semiconduc
15、tor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A - 3 - Pin Assignment Block Diagram Battery Protect Solution IC 1Source 1 2Vss 3VDD 4V- 5N.C. (No Connect ) 6Source 2 7Drain Package : UTEP-6LS 1 2 3 6 5 4 7 7 7 7 3 2 1 4 5 6 Charger VD1 VD2 VD4 VSS VD3 OscillatorCounter Logic Circuit Leve
16、l Shift Delay Logic Circuit Short VSSDOUTCOUT Gate1Gate2 VDD Source1 Drain Source2 V Overcharge Overdischarge Discharge Overcurrent Charger Detection Protection IC Common Drain Dual-Nch MOSFET Quality Management ITM Semiconductor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A - 4 - Absolut
17、e Maximum Rating TOPR=25, VSS=0V Electrical Characteristics Battery Protect Solution IC ItemSymbolMeasure ConditionMin.Typ.Max.Unit*1 Input Voltage Operating Input VoltageVDD1VDD- VSS1.5-10.0VA Minimum Operating Voltage for 0V Charging VSTVDDV-, VDD-VSS=0V-1.2VA Channel ON Voltage COUTPin Nch ON Vol
18、tageVOL1IOL=30, VDD=4.5V-0.40.5V- COUTPin Pch ON VoltageVOH1IOH= -30, VDD=3.9V3.43.7-V- DOUTPin Nch ON VoltageVOL2IOL=30, VDD=2.0V-0.20.5V- DOUTPin Pch ON VoltageVOH2IOL= -30, VDD=3.9V3.43.7-V- Current Consumption Current ConsumptionIDD VDD=3.9V, V-=0V-6.0 L TOPR= -3070- Current Consumption at Stand
19、-By IS VDD=2.0V-0.5 L TOPR= -3070- Over Charge Voltage Protection Overcharge Detection Voltage VDET1R1=1.0 TOPR= 254.4004.4254.450 VB TOPR= -30704.3804.4254.470 Overcharge Detection Delay Time tVDET1VDD=3.6V4.6V TOPR= 250.801.001.20 sB TOPR= -30700.601.001.50 Overcharge Release Voltage VREL1R1=1.0 T
20、OPR= 254.1854.2254.265 VB TOPR= -30704.1554.2254.295 Overcharge Release Delay Time tVREL1VDD=4.6V3.6V TOPR= 2512.816.019.2 B TOPR= -30709.616.024.0 ItemSymbolRatingUnit Supply VoltageVDD-0.3 12V V- Terminal Input VoltageV-VDD-28 VDD+0.3V COUTTerminal Output VoltageVCOUTVDD-28 VDD+0.3V DOUTTerminal O
21、utput VoltageVDOUTVSS-0.3 VDD+0.3V Operation TemperatureTOPR-40 +85 Storage TemperatureTSTG-55 +125 Drain-Source VoltageVDS24V Gate-Source VoltageVGS12V Quality Management ITM Semiconductor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A - 5 - Note : *1 The test circuit symbols. *2 The para
22、meter is guaranteed by design. Battery Protect Solution IC ItemSymbolMeasure ConditionMin.Typ.Max.Unit*1 Over Discharge Voltage Protection Overdischarge Detection Voltage VDET2 R1=1.0 V-=0V TOPR= 252.4302.5002.570 VD TOPR= -30702.4202.5002.580 Overdischarge Detection Delay Time tVDET2VDD=3.6V2.2V TO
23、PR= 2516.020.024.0 D TOPR= -307012.020.030.0 Overdischarge Release Voltage VREL2R1=1.0 TOPR= 252.8102.9002.990 VD TOPR= -30702.8002.9003.000 Overdischarge Release Voltage 2 VREL2 Vchg = 4.2V R1=1.0 TOPR= 252.4302.5202.610 VD TOPR= -30702.4202.5202.620 Overdischarge Release Delay Time tVREL2VDD=2.2V3
24、.6V TOPR= 250.82.84.8 E TOPR= -30700.52.86.0 Discharge Overcurrent Protection Discharging Overcurrent Detection Voltage VDET3 VDD=3.0V R2=2.2 TOPR= 250.1150.1250.135 VF TOPR= -30700.1050.1250.145 Discharging Overcurrent Detection Current IDET3# Reference : 1) Discharge / Charge Overcurrent Character
25、istics Discharging Overcurrent Detection Delay Time tVDET3 VDD=3.0V V-=0V0.3V TOPR= 259.612.014.4 F TOPR= -30707.212.018.0 Discharging Overcurrent Release Delay Time tVREL3 VDD=3.0V V-=3V0V TOPR= 253.24.04.8 F TOPR= -30702.44.06.0 Charge Overcurrent Protection Charging Overcurrent Detection Voltage
26、VDET4 VDD=3.5V R2=2.2 TOPR= 25-0.135 -0.125 -0.115 VG TOPR= -3070-0.145 -0.125 -0.105 Charging Overcurrent Detection Current IDET4# Reference : 1) Discharge / Charge Overcurrent Characteristics Charging Overcurrent Detection Delay Time tVDET4 VDD=3.5V V-=0V-1V TOPR= 2512.816.620.4 G TOPR= -30709.616
27、.625.0 Charging Overcurrent Release Delay Time tVREL4 VDD=3.5V V-=-1V0V TOPR= 253.24.04.8 G TOPR= -30702.44.06.0 Short Protection Short Detection VoltageVSHORTVDD=3.0V TOPR= 250.550.801.00 VF TOPR= -30700.400.801.10 Short Detection Delay Time tSHORT VDD=3.0V V-=0V3.0V TOPR= 25230400560 F TOPR= -3070
28、180400800 Quality Management ITM Semiconductor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A - 6 - Note : *1 The test circuit symbols. *2 The parameter is guaranteed by design. 1) Discharge / Charge Overcurrent Characteristics Note : The parameter is guaranteed by design, not tested in pr
29、oduction. Battery Protect Solution IC ItemSymbolMeasure ConditionMin.Typ.Max.Unit*1 Integrated MOSFET Drain-Source Breakdown Voltage BVDSSID=250, VGS=0V24-V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V-1 TJ=55-5 Gate-Body Leakage Current IGSSVDS=0V, VGS=10V-10 Gate-Source Breakdown Voltage B
30、VGSOVDS=0V, IG=25012-V Gate Threshold VoltageVGS(th)VDS=VGS, ID=2500.61.01.5V Static Source-Source ON-Resistance RSS(ON) VGS=4.4V, ID=1A10.014.018.0m VGS=4.2V, ID=1A10.014.018.0m VGS=3.9V, ID=1A11.015.019.0m VGS=3.7V, ID=1A12.016.020.0m VGS=3.5V, ID=1A13.017.021.0m VGS=3.3V, ID=1A14.018.022.0m VGS=3
31、.0V, ID=1A14.018.022.0m Diode Forward VoltageVSDIS=1A, VGS=0V0.500.690.90V Maximum Body-Diode Continuous Current IS-4.5A ItemSymbolMeasure ConditionMin.Typ.Max.Unit*1 Discharging overcurrent detection Current IDET3(1)VDD=4.4V5.78.213.5A IDET3(2)VDD=4.2V5.78.213.5A IDET3(3)VDD=3.9V5.47.612.3A IDET3(4
32、)VDD=3.7V5.17.111.3A IDET3(5)VDD=3.5V4.86.710.4A IDET3(6)VDD=3.3V4.56.29.6A IDET3(7)VDD=3.0V4.56.29.6A Charging Overcurrent Detection Current IDET4(1)VDD=4.4V5.78.213.5A IDET4(2)VDD=4.2V5.78.213.5A IDET4(3)VDD=3.9V5.47.612.3A IDET4(4)VDD=3.7V5.17.111.3A IDET4(5)VDD=3.5V4.86.710.4A IDET4(6)VDD=3.3V4.
33、56.29.6A IDET4(7)VDD=3.0V4.56.29.6A Quality Management ITM Semiconductor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A - 7 - Measuring Circuit Battery Protect Solution IC Nc Nc Nc Nc Nc Nc Nc Nc TP or Nc TP or NcTP or Nc TP or NcTP or Nc TP or NcTP or Nc VDD V Source1 (VSS)Source2 V V V A
34、 V A V VDD V Source1 (VSS)Source2 V VDD V Source1 (VSS)Source2 V VDD V Source1 (VSS)Source2 V VDD V Source1 (VSS)Source2 V VDD V Source1 (VSS)Source2 V VDD V Source1 (VSS)Source2 V VDD V Source1 (VSS)Source2 A. E. B. C. D. F. G. H. V V TP or Nc Quality Management ITM Semiconductor Rev. 01 2014. 02.
35、05 S S S SS S S S7 7 7 71 1 1 1A A A A - 8 - Operation 1. Overcharge detector (VD1) The VD1 monitors VDDpin voltage during charge. In the state of charging the battery, it will detect the overcharge state of the battery if the VDDterminal voltage becomes higher than the overcharge detection voltage(
36、Typ. 4.425V). And then the COUTterminal turns to low level, so the internal charging control Nch MOSFET turns OFF and it forbids to charge the battery. After detecting overcharge, it will release the overcharge state if the VDDterminal voltage becomes lower than the overcharge release voltage(Typ. 4
37、.225V). And then the COUTterminal turns to high level, so the internal charging control Nch MOSFET turns ON, and it accepts charge the battery. When the VDDterminal voltage is higher than the overcharge detection voltage, to disconnect the charger and connect the load, leave the COUTterminal low lev
38、el, but it accepts to conduct load current via the paracitical body diode of the internal Nch MOSFET. And then if the VDDterminal voltage becomes lower than the overcharge detection voltage, the COUTterminal turns to high level, so the internal Nch MOSFET turn ON, and it accepts to charge the batter
39、y. The overcharge detection and release have delay time decided internally. When the VDD terminal voltage becomes higher than the overcharge detection voltage, if the VDDterminal voltage becomes lower than the overcharge detection voltage again within the overcharge detection delay time(Typ. 1.00s),
40、 it will not detect overcharge. And in the state of overcharge, when the VDDterminal voltage becomes lower than the overcharge release voltage, if the VDDterminal voltage backs higher than the overcharge release voltage again within the overcharge release delay time(Typ. 16ms), it will not release o
41、vercharge. The output driver stage of the COUTterminal includes a level shifter, so it will output the V-terminal voltage as low level. The output type of the COUTterminal is CMOS output between VDDand V-terminal voltage. 2. Overdischarge detector (VD2) The VD2 monitors VDDpin voltage during dischar
42、ge. In the state of discharging the battery, it will detect the overdischarge state of the battery if the VDDterminal becomes lower than the overdischarge detection voltage (Typ. 2.500V). And then the DOUTterminal turns to low level, so the internal discharging control Nch MOSFET turn OFF and it for
43、bids to discharge the battery. Once overdischarge has been detected, overdischarge is released and the DOUToutput becomes high level, if the voltage of the battery rises more than the overdischarge detection voltage with connecting the charger, or more than the overdischarge release voltage without
44、connecting the charger. Charging current is supplied through a parasitic diode of Nch MOS FET when the VDDterminal voltage is below the overdischarge detection voltage to the connection of the charger, and the DOUTterminal enters the state which can be discharged by becoming high level,and turning o
45、n Nch MOS FET when the VDDterminal voltage rises more than the overdischarge detection voltage. Battery Protect Solution IC Quality Management ITM Semiconductor Rev. 01 2014. 02. 05 S S S SS S S S7 7 7 71 1 1 1A A A A - 9 - When the battery voltage is about 0V, if the charger voltage is higher than
46、the minimum operating voltage for 0V charging (Max. 1.2V), the COUTterminal outputs high level and it accepts to conduct charging current. The overdischarge detection have delay time decided internally. When the VDDterminal voltage becomes lower than the overdischarge detection voltage, if the VDDte
47、rminal voltage becomes higher than the overdischarge detection voltage again within the overdischarge detection delay time (Typ. 20ms), it will not detect overdischarge. Moreover, the overdischarge release delay time (Typ. 2.8ms) exists, too. All the circuits are stopped, and after the overdischarge
48、 is detected, it is assumed the state of the standby, and decreases the current (standby current) which IC consumes as much as possible. (When VDD=2V, Max. 0.5uA). The output type of the DOUTterminal is CMOS output between VDDand VSSterminal voltage. 3. Discharge overcurrent detector, Short detector
49、 (VD3, Short Detector) In the state of chargable and dischargabe, VD3 monitors the voltage level of V-pin. If the V-terminal voltage becomes higher than the discharging overcurrent detection voltage (Typ. 0.125V) by short of loads, etc., it will detect discharging overcurrent state. If the V- terminal voltage becomes higher then short detection voltage (Typ. 0.8V), it will detect discharging overcurrent state, too. And then the DOUTterminal outputs low level, so the internal discharging control Nch MOSFET turns OFF, and it protects from larg