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1、JANTXV2N6786中文资料Product SummaryPart Number BV DSS R DS(on)I D JANTX2N6786JANTXV2N6786Features:s Avalanche Energy Rating s Dynamic dv/dt Ratings Simple Drive Requirements s Ease of Paralleling sHermetically SealedN-CHANNELProvisional Data Sheet No. PD-9.425B400 Volt, 3.6? HEXFETHEXFET technology is t
2、he key to International Rectifiers advanced line of power MOSFET transis-tors. The efficient geometry achieves very low on-state resistance combined with high transconductance.HEXFET transistors also feature all of the well-es-tablish advantages of MOSFETs, such as voltage control, very fast switchi
3、ng, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits, and virtu-ally any application where high reliability is required.JAN
4、TX2N6786JANTXV2N6786REF:MIL-PRF-19500/556GENERIC:IRFF310HEXFET ? POWER MOSFET ParameterJANTX2N6786, JANTXV2N6786UnitsI D V GS = 10V, T C = 25C Continuous Drain Current 1.25I D V GS = 10V , T C = 100CContinuous Drain Current 0.80I DMPulsed Drain Current 5.0P D T C = 25CMax. Power Dissipation 15W Line
5、ar Derating Factor 0.12W/K V G S Gate-to-Source Voltage20V dv/dt Peak Diode Recovery dv/dt 4.0V/nsT J Operating Junction-55 to 150T STGStorage T emperature Range Lead Temperature 300(0.063 in. (1.6mm) from case for 10.5 seconds)Weight0.98 (typical)goCA1.25A3.6?400V元器件交易网http:/ ResistanceParameterMin
6、.Typ.Max.UnitsTest ConditionsR thJC Junction-to-Case 8.3R thJAJunction-to-Ambient175K/WTypical socket mountSource-Drain Diode Ratings and CharacteristicsParameterMin.Typ.Max.UnitsTest ConditionsI S Continuous Source Current (Body Diode) 1.25Modified MOSFET symbol showing the I SMPulse Source Current
7、 (Body Diode)5.0integral reverse p-n junction rectifier.V SD Diode Forward Voltage 1.4V T j = 25C, I S = 1.25A, V GS = 0V t rr Reverse Recovery Time 540ns T j = 25C, I F = 1.25A, di/dt 100A/sQ RR Reverse Recovery Charge 4.5CV DD 50Vt onForward Turn-On TimeIntrinsic turn-on time is negligible. Turn-o
8、n speed is substantially controlled by L S + L D .Electrical Characteristics Tj = 25C (Unless Otherwise Specified)DS = 25Vf = 1.0 MHz see figure 5AFig. 1 T ypical Output CharacteristicsT C = 25C Fig. 2 T ypical Output CharacteristicsT C = 150CFig. 3 Typical Transfer Characteristics Fig. 4 Normalized
9、 On-Resistance Vs.TemperatureFig. 5 T ypical Capacitance Vs. Drain-to-SourceVoltage Fig. 6 T ypical Gate Charge Vs. Gate-to-SourceVoltageFig. 10b Switching Time WaveformsFig. 10a Switching Time Test Circuit Fig. 8 Maximum Safe Operating AreaFig. 9 Maximum Drain Current Vs. Case TemperatureFig. 7 Typ
10、ical Source-to-Drain Diode ForwardVoltageFig. 13a Gate Charge T est CircuitFig. 12a Unclamped Inductive T est Circuit Fig. 12b Unclamped Inductive WaveformsFig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse DurationJANTX2N6786, JANTXV2N6786 Device元器件交易网http:/ Outline a
11、nd Dimensions TO-205AF (Modified TO-39)Repetitive Rating; Pulse width limited by maximum junction temperature.(see figure 11) V DD = 50V , Starting T J = 25C,E AS = 0.5 * L * (I L 2) * BV DSS /(BV DSS -V DD )Peak I L = 1.25A, V GS = 10V, 25 R G 200?WORLD HEADQUARTERS: 233 Kansas St., El Segundo, Cal
12、ifornia 90245, Tel: (310) 322 3331EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732021IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: + 49 6172 96590IR ITALY: Via Liguri
13、a 49, 10071 Borgaro, Torino Tel: + 39 11 451 0111IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371http:/ and specifications subject to change without notice.10/96All dimensions are shown millimeters (inches)