ExposureProcess.ppt

上传人:本田雅阁 文档编号:2891935 上传时间:2019-06-02 格式:PPT 页数:34 大小:533.52KB
返回 下载 相关 举报
ExposureProcess.ppt_第1页
第1页 / 共34页
ExposureProcess.ppt_第2页
第2页 / 共34页
ExposureProcess.ppt_第3页
第3页 / 共34页
ExposureProcess.ppt_第4页
第4页 / 共34页
ExposureProcess.ppt_第5页
第5页 / 共34页
点击查看更多>>
资源描述

《ExposureProcess.ppt》由会员分享,可在线阅读,更多相关《ExposureProcess.ppt(34页珍藏版)》请在三一文库上搜索。

1、Exposure Process,Photo : Silver Qian,主要内容,光刻机原理 光刻机主要性能参数 Resolution DOF 光刻机主要工艺控制 Defocus Misalign,设备名称介绍,NSR2005G8C NSR NIKON Step and Repeat Exposure System 20 Max. Exposure Field is 20mm Square 05 Reduction Ratio is 1/5 G G-Line is Used as Exposure Light Source 8 Body Type Number C Projection Le

2、ns Type,Exposure Field,Mask Pellicle,驻波 Standing Wave,PEB、TARC、BARC可降低驻波效应,NIKON机光路图,椭球体 汞灯 快门 滤光镜 蝇眼积分器 聚光镜 聚光镜 挡板 光刻版 光学镜头 园片,主要性能参数,k : 工艺系数 kMIN =0.61 NA : 数值孔径 : 光源波长 G-line (436nm)、 I-line (365nm)、 KrF (248nm)、 ArF、F2、,数值孔径 Numerical Aperture,NA: 描述多光学元件透镜系统的性能,n: 透镜折射率 2: 像点张角 D: 透镜直径 f: 透镜焦距

3、,焦深 Depth Of Focus,A plus or minus deviation from a defined reference plane wherein the required resolution for photolithography is still achievable.,主要性能参数,How to Produce 0.4um Process?,Top ARC/Bottom ARC Mask Optical Pattern Correction; Phase-Shift Masks; Off-axis Illumination SHRINC (Super High R

4、esolution by IllumiNation Contral) Inprove the DOF Small Sigma Improve the resolution of isolated round patterns such as Contate Holes.,Focus-Exposure Matrix,Evaluating the effects of focus and exposure on the results of a projection lithography system (such as a stepper) is a critical part of under

5、standing and controlling a lithographic process.,UnderExposed,OverExposed,工艺窗口 Process Window,Critical Dimension 10% Sidewall Angle 80 Resist Loss 10%,Defocus 的影响,Defocus 产生的原因,Particle Edge, OF Effect Auto Focus Auto Leveling,边缘效应,Auto Focus,Auto Focus,Auto Leveling,Auto Leveling,Stage,Laser Interf

6、erometer System,对位过程,初始化基准标记位置 (Found Coordinates) 光刻版对位 (Align to Fiducial Mark) 园片对位 (Base on the Coordinates) Pre-Alignment (Fiend the Orientation Flat) Search Alignment LSA (Laser Step Alignment) FIA (Field Image Alignment) g-EGA Alignment (Enhanced Global Alignment) LSA FIA,Alignment Process,Al

7、ignment Mark,LSA vs. FIA,Wafer Search Alignment,Search Y-T 对位; 确认圆片旋转; 确认Y位置; 确认X位置; 进行EGA对位。,Wafer EGA Alignment,EGA Correction,Offset (um) Scaling (PPM) Wafer Rotation (urad) X-Y Orthogonality (urad) Shot Magnification (PPM),对位点个数对对位精度的影响,Misalign,Offset In Shot Magnification Shot Rotation By Shots Scaling Wafer Rotation Orthogonility,Misalign,Misalign,

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 其他


经营许可证编号:宁ICP备18001539号-1