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1、BRITISH STANDARD BS 9364 N013:1979 Incorporating Amendment No. 1 Detail specification for low power silicon p-n-p switching transistors 25 V, planar epitaxial, ambient rated, hermetic encapsulation Full plus additional assessment level UDC 621.316.5:621.318.57:621.382.3 Licensed Copy: London South B
2、ank University, London South Bank University, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N013:1979 BSI 12-1999 Committee reference ECL/2 ISBN 0 580 10697 7 A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standard
3、s are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, pages i and ii, pages 1 to 6 and a back cover. This standard has been updated
4、(see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Amendments issued since publication Amd. No.Date of issueComments 3185October 1979Indicated by a sideline in the margin Licensed Copy: London South Bank University,
5、 London South Bank University, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N013:1979 BSI 12-1999i Contents Page 1Limiting conditions of use1 2Characteristics2 3Marking and terminal identification2 4Related documents2 5Ordering information3 6Inspection requirements3 Figure
6、1 Derating curve6 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncontrolled Copy, (c) BSI ii blank Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncontrolled Copy, (c) B
7、SI BS 9364 N013:1979 BSI 12-19991 1 Limiting conditions of use (not for inspection purposes) Absolute maximum values ELECTRONIC COMPONENTS OF ASSESSED QUALITY DETAIL SPECIFICATION IN ACCORDANCE WITH BS 9300:1969 MANUFACTURERS TYPE NUMBER CV 9543 Outline and dimensions. Third angle projectionFor orde
8、ring information see clause 5 LOW POWER SWITCHING TRANSISTOR P-N-P 25 V SILICON PLANAR EPITAXIAL AMBIENT RATED HERMETIC ENCAPSULATION FULL ASSESSMENT LEVEL PLUS ADDITIONAL REQUIREMENTS The collector is electrically connected to the envelope All dimensions in mm For detail dimensions see BS 3934 SO-1
9、32A Marking information, see clause 3 VCBCollector-base voltage25 V VCEOCollector-emitter voltage with base open circuit20 V VEBEmitter-base voltage5 V ICCollector current100 mA IBBase current10 mA PtotTotal power dissipation at an ambient temperature of 25 C (see derating curve, Figure 1)300 mW Tam
10、bOperating ambient temperature range 55 C to + 175 C TstgStorage temperature range 55 C to + 175 C Refer to Qualified Products List PD 9002 for details of manufacturers approved to this specification. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 04:00:14 GMT+
11、00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N013:1979 2 BSI 12-1999 2 Characteristics (not for inspection purposes) (at Tamb 25 C unless otherwise stated) 3 Marking and terminal identification 1) Terminal identification (see outline on page 1). 2) Marking. Each transistor shall bear the following
12、 marking: a) the type number CV9543; b) the factory identification code (see 1.1.6.3 of BS 9300); c) the date code. Each package containing one or more of these transistors shall bear all the above markings and in addition: d) the number of this detail specification, i.e. BS 9364 N013, Issue 1. 4 Re
13、lated documents BS 3934, Dimensions of semiconductor devices. BS 6001, Sampling procedures and tables for inspection by attributes. BS 9000, General requirements for electronic components of assessed quality. BS 9300, Semiconductor devices of assessed quality: Generic data and methods of test. PD 90
14、02, BS 9000 component selection guide. ICBO(1)Collector-base cut-off currentVCB= 20 V50 nA max. ICBO(3)Collector-base cut-off currentVCB= 25 V10 4A max. ICEOCollector-emitter cut-off currentVCE= 13 V45 4A max. Tamb= 100 C IEBO(1)Emitter-base cut-off currentVEB= 5 V10 4A max. IEBO(2)Emitter-base cut-
15、off currentVEB= 1.5 V25 nA max. IEBO(3)Emitter-base cut-off currentVEB= 1.5 V15 4A max. Tamb= 100 C VCEO(sus)Collector-emitter sustaining voltage (Tamb= 55 C to 175 C) IC= 10 mA20 V min. VBE(sat)(1)Base-emitter saturation voltageIC= 10 mA0.9 V max. IB= 1 mA VBE(sat)(2)Base-emitter saturation voltage
16、IC= 50 mA1.6 V max. IB= 2.5 mA hFE(1)Static forward current transfer ratioIC= 10 mA35 min. VCE= 0.4 V hFE(3)Static forward current transfer ratioIC= 1 mA30 min. VCE= 0.4 V hFE(4)Static forward current transfer ratioIC= 30 mA20 min. VCE= 0.4 V hFE(5)Static forward current transfer ratioIC= 50 mA20 mi
17、n. VCE= 0.75 V fTTransition frequencyVCE= 12 V100 MHz min . IC= 10 mA f = 20 MHz CoboOutput capacitanceVCB= 10 V10 pF max. f = 1 MHz tsStorage timeIC= 10 mA200 ns max. IB1= IB2= 1 mA Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncont
18、rolled Copy, (c) BSI BS 9364 N013:1979 BSI 12-19993 5 Ordering information Orders for this transistor shall contain the following minimum information: . . . . . (Qty), Transistors type CV9543 to BS 9364 N013, Issue 1, dated December 1978. 6 Inspection requirements All tests shall be made at Tamb= 25
19、 C unless otherwise stated (see 1.2.4.1.5 of BS 9300). Samples submitted to tests marked (D), shall not be accepted for release under BS 9000 (see 2.6.5 of BS 9000-1). Inspection BS 9300:1969 reference and conditions of test Symbol Limits Unit Min.Max. Group A Subgroup A1 Visual inspection Subgroup
20、A5 not applicable Inspection level I, AQL 1.5 % 1.2.2.1 Subgroup A2Inspection level II, AQL 0.65 % Collector-emitter sustaining voltage Collector-base cut-off current Static forward current transfer ratio 3002 3001 3011 IC= 10 mA VCB= 20 V IE= 0 IC= 10 mA VCE= 0.4 V VCEO(sus) ICBO(1) hFE(1) 20 35 50
21、 V nA Subgroup A3Inspection level I, AQL 2.5 % Emitter-base cut-off current Base-emitter saturation voltage Static forward current transfer ratio 3001 3008 3011 VEB= 5 V, IC= 0 IC= 10 mA IB= 1 mA IC= 30 mA VCE= 0.4 V IEBO(1) VBE (sat)(1) hFE(4)20 10 0.9 4A V Subgroup A4Inspection level S-4, AQL 4.0
22、% Static forward current transfer ratio Storage time Collector-base cut-off current 3011 3301 3001 IC= 1 mA, VCE= 0.4 V R1= 10 k7 R2= 15 k7 R3= 390 7 C = 0.47 4F Vin= 20 V VBB= 15 V VCC= 4 V IC= 10 mA IB1= IB2= 1 mA Min. pulse length = 1 4s Max. pulse duty cycle = 1 % Max. pulse rise time = 5 ns VCB
23、= 25 V hFE(3) ts ICBO(3) 30 200 10 ns 4A Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N013:1979 4 BSI 12-1999 Inspection BS 9300:1969 reference and conditions of test Symbol Limits Unit Min.Max. Grou
24、p BSubgroups B4, B5 and B6 not applicable Subgroup B1Inspection level S-2, AQL 6.5 % Dimensions1.2.3BS 3934 SO-132AD5.315.84mm A4.325.33mm Subgroup B2(a)Inspection level S-4, AQL 4.0 % Solderability (D) (see note 1) 1.2.6.10(see note 2) Subgroup B2(b)Inspection level S-4, AQL 4.0 % Rapid change of t
25、emperature followed by Damp heat, cyclic (D) 1.2.6.7 1.2.6.3 Tamb= 55 C to 175 C Six cycles Subgroup B3Inspection level S-3, AQL 6.5 % Lead fatigue (D)1.2.6.11.1 Subgroup B7Inspection level S-4, AQL 1.5 % Electrical endurance1.2.7.6.1Duration 160 h min. Post-test end-points for subgroups B2(b) and B
26、7 Collector-base cut-off current Static forward current transfer ratio 3001 3011 VCB= 20 V VCE= 0.4 V IC= 10 mA ICBO(1) hFE(1)30 75 nA Subgroup B8 CTR information1.1.11Attributes information for subgroups B2(a), B2(b), B3 and B7 Group C Subgroup C1 Subgroup C4 not applicable Inspection level S-2, AQ
27、L 6.5 % Dimensions1.2.3BS 3934 SO-132AB2 L 0.41 12.5 0.48 14.5 mm mm Subgroup C2(a)Inspection level S-4, AQL 4.0 % Transition frequency Output capacitance 3206 3013 VCE= 12 V IC= 10 mA f = 20 MHz VCB= 10 V fT Cobo 100 10 MHz pF Licensed Copy: London South Bank University, London South Bank Universit
28、y, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N013:1979 BSI 12-19995 Inspection BS 9300:1969 reference and conditions of test Symbol Limits Unit Min.Max. Subgroup C2(b)Inspection level I, AQL 4.0 % Collector-emitter cut-off current Emitter-base cut-off current Base-emitte
29、r saturation voltage Static forward current transfer ratio Emitter-base cut-off current 3001 3001 3008 3011 3001 VCE= 13 Tamb= 100 C VEB= 1.5 Tamb= 100 C IC= 50 mA IB= 2.5 mA IC= 50 mA VCE= 0.75 V VEB= 1.5 V, IC= 0 ICEO IEBO(3) VBE (sat)(2) hFE(5) IEBO(2) 20 45 15 1.6 25 4A 4A V nA Subgroup C3Inspec
30、tion level S-2, AQL 6.5 % Vibration, swept frequency followed by Acceleration, steady state 1.2.6.5 1.2.6.6 f = 150 Hz to 2 000 Hz Acceleration = 196 m/s2 Acceleration = 196 000 m/s2 along the axis, leads inwards Subgroup C5Inspection level S-3, AQL 4.0 % Electrical endurance1.2.7.6.1Duration 2 000
31、h min. Post-test end-points for subgroups C3 and C5 Collector-base cut-off current Static forward current transfer ratio 3001 3011 VCB= 20 V IC= 10 mA VCE= 0.4 V ICBO(1) hFE(1)30 75 nA Subgroup C6 CTR information1.1.11Attributes information for subgroup C2(a) and C3 Measurements information for ICBO
32、(1) and hFE(1) before and after the tests in subgroup C5 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N013:1979 6 BSI 12-1999 Inspection BS 9300:1969 reference and conditions of test Symbol Limits Un
33、it Min.Max. Group DSubgroups D2 and D3 not applicable Subgroup D1Inspection level S-2, (see note 3) Dimensions1.2.3BS 3934 SO-132Aa2.54 TPmm B B1 D3 F1 h j k L L1 4.53 0.13 0.92 0.51 6.35 1.27 0.53 4.95 1.01 0.76 1.16 1.21 1.27 mm mm mm mm mm mm mm mm mm !245 TPdegree Subgroup D4Inspection level S-3
34、 Electrical endurance1.2.7.6.1Duration 8 000 h min. Subgroup D5 CTR information1.1.11Measurements information for ICBO(1) and hFE(1) before and after the tests in subgroup D4 NOTE 1This test is destructive only when the lead finish is materially altered by the solderability test. NOTE 2When method 1
35、.2.6.10.2 is used, the inspection level shall be reduced to S-3. NOTE 3For the purpose of qualification approval, subgroup D1 has an AQL of 6.5 % (see 1.1.10 and 1.1.14 of BS 9000). Figure 1 Derating curve Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 04:00:14
36、 GMT+00:00 2006, Uncontrolled Copy, (c) BSI blank Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 04:00:14 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS 9364 N013:1979 BSI 389 Chiswick High Road London W4 4AL BSI British Standards Institution BSI is the independ
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