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1、BRITISH STANDARD BS QC 750102:1990 IEC 747-7-1: 1989 Specification for Harmonized system of quality assessment for electronic components Semiconductor discrete devices Blank detail specification Ambient-rated bipolar transistors for low and high-frequency amplification Licensed Copy: London South Ba
2、nk University, London South Bank University, Fri Dec 08 17:04:36 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750102:1990 BSI 02-2000 ISBN 0 580 35804 6 Amendments issued since publication Amd. No.Date of issueComments Licensed Copy: London South Bank University, London South Bank University, Fr
3、i Dec 08 17:04:36 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750102:1990 BSI 02-2000i Contents Page National forewordii Introduction1 1Mechanical description2 2Short description2 3Categories of assessed quality2 4Limiting values3 5Electrical characteristics3 6Marking6 7Ordering information6 8T
4、est conditions and inspection requirements6 9Group D Qualification approval tests13 10Additional information13 Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:36 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750102:1990 ii BSI 02-2000 National foreword
5、This British Standard has been prepared under the direction of the Electronic Components Standards Policy Committee ECL/-. It is identical with IEC Publication 747-7-1:1989 QC 750102 “Semiconductor devices Discrete devices Part 7: Bipolar transistors. Section 1: Blank detail specification for ambien
6、t-rated bipolar transistors for low and high-frequency amplification” published by the International Electrotechnical Commission (IEC). Cross-references The British Standard harmonized with QC 001001 and QC 001002 is BS 9000 “General requirements for a system for electronic components of assessed qu
7、ality”. There is no corresponding British Standard for IEC 191, but BS 3934 “Specification for dimensions of semiconductor devices and integrated electronic circuits” is a related standard. A British Standard does not purport to include all the necessary provisions of a contract. Users of British St
8、andards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. International Standarda Corresponding British Standard IEC 68-2-17:1978BS 2011 Basic environmental testing procedures Part 2.1Q:1981 Test Q. Sealing (I
9、dentical) IEC 747-2:1983BS 6493 Semiconductor devices Part 1 Discrete devices Section 1.2:1984 Recommendations for rectifier diodes (Identical) IEC 747-7:1988BS 6493 Semiconductor devices Part 1 Discrete devices Section 1.7:1989 Recommendations for bipolar transistors (Identical) IEC 747-10/QC 70000
10、0:1984BS 9970 Harmonized system of quality assessment for electronic components. Semiconductor devices Part 0:1985 Generic specification (Identical) IEC 747-11/QC 750000:1985BS QC 750000:1986 Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Sectional
11、 specification. (Identical) IEC 749:1984BS 6493 Semiconductor devices Part 3:1985 Mechanical and climatic test methods (Identical) a Some standards are undated in the text. Summary of pages This document comprises a front cover, an inside front cover, pages i and ii, pages 1 to 13 and a back cover.
12、This standard has been updated (see copyright date) and may have had amendments incorporated. This will be indicated in the amendment table on the inside front cover. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:36 GMT+00:00 2006, Uncontrolled Copy, (c)
13、 BSI BS QC 750102:1990 BSI 02-20001 Introduction The IEC Quality Assessment System for Electronic Components is operated in accordance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electroni
14、c components released by one participating country as conforming with the requirements of an applicable specification are equally acceptable in all other participating countries without the need for further testing. This blank detail specification is one of a series of blank detail specifications fo
15、r semiconductor devices and shall be used with the following IEC publications: Required information Numbers shown in brackets on this and the following pages correspond to the following items of required information, which shall be entered in the spaces provided. Identification of the detail specifi
16、cation 1 The name of the National Standards Organization under whose authority the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of is
17、sue and any further information required by the national system. Identification of the component 5 Type of component. 6 Information on typical construction and applications. If a device is designed to satisfy several applications, this shall be stated here. Characteristics, limits and inspection req
18、uirements for these applications shall be met. If a device is electrostatic sensitive, or contains hazardous material, e.g. beryllium oxide, a caution statement shall be added in the detail specification. 7 Outline drawing and/or reference to the relevant standard for outlines. 8 Category of assesse
19、d quality. 9 Reference data on the most important properties to permit comparison between component types. 747-10/QC 700000 (1984):Semiconductor devices, Part 10: Generic specification for discrete devices and integrated circuits. 747-11/QC 750100 (1985):Semiconductor devices, Part 11: Sectional spe
20、cification for discrete devices. Throughout this standard, the texts given in square brackets are intended for guidance to the specification writer and shall not be included in the detail specification. Throughout this standard, when a characteristic or rating applies, “x” denotes that a value shall
21、 be inserted in the detail specification. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:36 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750102:1990 2 BSI 02-2000 Name (address) of responsible NAI (and possibly of body from which specification is avai
22、lable). 1 Number of IECQ detail specification, plus issue number and/or date. QC 750102 . 2 ELECTRONIC COMPONENT OF ASSESSED QUALITY IN ACCORDANCE WITH: Generic specification: Publication 747-10/QC 700000 Sectional specification: Publication 747-11/QC 750100 and national references if different. 3 N
23、ational number of detail specification. This box need not be used if the National number repeats IECQ number. 4 DETAIL SPECIFICATION FOR: Type number(s) of the relevant device(s). Ordering information: see Clause 7 of this standard. 5 1 Mechanical description2 Short description Outline references: I
24、EC 191-2 mandatory if available and/or national if there is no IEC outline. 7Ambient-rated bipolar transistors for: w Low-frequency amplification (LF) w High-frequency amplification (HF) Semiconductor material: Si 6 Outline drawing may be transferred to or given with more details in Clause 10 of thi
25、s standard. Encapsulation: cavity or non-cavity. Application(s): see Clause 5 of this standard. CAUTION. Observe precautions for handling ELECTROSTATIC SENSITIVE DEVICES if applicable. Terminal identification drawing showing pin assignments, including graphical symbols. 3 Categories of assessed qual
26、ity From Sub-clause 2.6 of the generic specification. 8 Reference data9 Marking: letters and figures, or colour code. The detail specification shall prescribe the information to be marked on the device, if any. See Sub-clause 2.5 of generic specification and/or Clause 6 of this standard. Polarity in
27、dication, if a special method is used. Information about manufacturers who have components qualified to this detail specification is available in the current Qualified Products List. Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:36 GMT+00:00 2006, Uncont
28、rolled Copy, (c) BSI BS QC 750102:1990 BSI 02-20003 4 Limiting values (absolute maximum rating system) These values apply over the operating temperature range unless otherwise specified. Repeat only sub-clause numbers used, with title. Any additional values shall be given at the appropriate place, b
29、ut without sub-clause number(s). Curves should preferably be given under Clause 10 of this standard. 5 Electrical characteristics See Clause 8 of this standard for inspection requirements. Repeat only sub-clause numbers used, with title. Any additional characteristics shall be given at appropriate p
30、lace but without sub-clause number(s). When several devices are defined in the same detail specification, the relevant values shall be given on successive lines, avoiding repeating identical values. Curves should preferably be given under Clause 10 of this standard. Sub-clauseParametersSymbol Value
31、min.max. 4.1Ambient temperaturesTamb 4.2Storage temperaturesTstg 4.3Collector-base voltage: Maximum collector-base (d.c.) voltage VCBO 4.4Collector-emitter voltage: One (preferably VCEO) or more of the following shall be specified: Maximum collector-emitter (d.c.) voltage with zero base currentVCEO
32、Maximum collector-emitter (d.c.) voltage with specified reverse base voltage VCEX Maximum collector-emitter (d.c.) voltage with base short-circuited to emitter VCES Maximum collector-emitter (d.c.) voltage with specified external resistance RBE VCER 4.5Emitter-base voltage: Maximum emitter-base (d.c
33、.) reverse voltage VEBO 4.6Maximum collector (d.c.) currentIC 4.7Power dissipation: Any special requirements for ventilation/mounting shall be specified 4.7.1Maximum total power dissipation as a function of ambient temperature, or: Ptot = f (T) 4.7.2Maximum virtual (equivalent) junction temperature
34、and absolute limit of power dissipation T(vj) Ptot Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:36 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750102:1990 4 BSI 02-2000 Sub-clause Characteristics and conditions at Tamb = 25 C unless otherwise speci
35、fied (see Clause 4 of the generic specification) Symbol LFHF Tested min. max. min. max. 5.1Minimum value of the common-emitter static forward current transfer ratio at specified VCE and IC (or VCB and IE), preferably at typical operating current (d.c. or pulse, as specified) h21E(1)A2b 5.2Where appr
36、opriate: Maximum value of common-emitter static forward current transfer ratio under the same conditions as in Sub-clause 5.1 (d.c. or pulse, as specified) h21E(1)A2b 5.3Where appropriate: Minimum value of the common-emitter static forward current transfer ratio (d.c. or pulse, as specified): 5.3.1
37、for large-signal devices (drivers): at low VCE and high IC h21E(2)C2b 5.3.2 for small-signal devices (preamplifiers): at specified VCE and low IC h21E(3)C2b 5.4For matched-pair transistors contained in the same case or encapsulation: Ratio of static values of common-emitter forward current transfer
38、ratio, at specified VCE and IC, preferably at typical operating voltage and current (note) A2b 5.5Minimum transition frequency at specified VCE, IC and f fT C2a A4 5.6Where appropriate: Maximum transition frequency under the same conditions as in Sub-clause 5.5 fTA4 5.7Cut-off currents: At least one
39、 (preferably ICBO) of the following shall be specified: Maximum collector-base cut-off current with the emitter open-circuited, preferably at maximum rated VCBO ICBO(1)A2b Maximum collector-emitter cut-off current under specified base-emitter bias conditions, preferably at maximum rated VCEX ICEX(1)
40、A2b Maximum collector-emitter cut-off current with specified base-emitter resistance, preferably at maximum rated VCER ICER(1)A2b Maximum collector-emitter cut-off current with the base short-circuited to the emitter, preferably at maximum rated VCES ICES(1)A2b Maximum collector-emitter cut-off curr
41、ent with the base open-circuited, preferably at maximum rated VCEO ICEO(1)A2b NOTEThe ratio is defined by . h21E(1) h21E(2) - - smaller value larger value - Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:36 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC
42、 750102:1990 BSI 02-20005 Sub-clause Characteristics and conditions at Tamb = 25 C unless otherwise specified (see Clause 4 of the generic specification) Symbol LFHF Tested min. max. min. max. 5.8Cut-off currents at high temperature: At least one (preferably ICBO) of the following shall be specified
43、: Maximum collector-base cut-off current at VCB preferably between 65 % and 85 % of maximum rated VCBO, IE = O and at a high temperature ICBO(2)C2b Maximum collector-emitter cut-off current under specified base-emitter bias conditions, at VCE preferably between 65 % and 85 % of maximum rated VCEX an
44、d at a high temperature ICEX(2)C2b Maximum collector-emitter cut-off current with specified base-emitter resistance, at VCE preferably between 65 % and 85 % of maximum rated VCER and at a high temperature ICER(2)C2b Maximum collector-emitter cut-off current with the base short-circuited to the emitt
45、er, at VCE preferably between 65 % and 85 % of maximum rated VCES and at a high temperature ICES(2)C2b Maximum collector-emitter cut-off current with the base open-circuited, at VCE preferably between 65 % and 85 % of maximum rated VCEO and at a high temperature ICEO(2)C2b 5.9Maximum emitter-base cu
46、t-off current at VEB between 50 % and 100 % of maximum rated VEBO, IC = O IEBOA2b 5.10Where appropriate: Maximum base-emitter voltage, preferably specified under the same conditions as in Sub-clause 5.1 (d.c. or pulse, as specified) VBEA2b 5.11For matched-pair transistors contained in the same case
47、or encapsulation: Difference between base-emitter voltages, under the same conditions as for |VBE1 VBE2| A2b 5.12For matched-pair transistors contained in the same case or encapsulation: Change in the difference between base-emitter voltages between T1 = 25 C and a specified high temperature T2, und
48、er the same conditions as for |%(VBE1 VBE2)|%T C2b 5.13Where appropriate: Minimum and, where appropriate, maximum value of the common-emitter small-signal forward current transfer ratio at specified VCE and IC, f = 1 kHz h21eA3 5.14For low-noise types: Maximum noise factor, under specified condition
49、s at specified VCE and IC FA4 h21E1 h21E2 - - h21E1 h21E2 - - Licensed Copy: London South Bank University, London South Bank University, Fri Dec 08 17:04:36 GMT+00:00 2006, Uncontrolled Copy, (c) BSI BS QC 750102:1990 6 BSI 02-2000 6 Marking Any particular information other than that given in box k (Clause 1) and/or Sub-cl