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1、 Reference number ISO 22493:2008(E) ISO 2008 INTERNATIONAL STANDARD ISO 22493 First edition 2008-10-01 Microbeam analysis Scanning electron microscopy Vocabulary Analyse par microfaisceaux Microscopie lectronique balayage Vocabulaire Copyright International Organization for Standardization Provided
2、by IHS under license with ISO Licensee=Boeing Co/5910770001 Not for Resale, 10/25/2008 04:54:21 MDTNo reproduction or networking permitted without license from IHS -,-,- ISO 22493:2008(E) PDF disclaimer This PDF file may contain embedded typefaces. In accordance with Adobes licensing policy, this fi
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5、at the file is suitable for use by ISO member bodies. In the unlikely event that a problem relating to it is found, please inform the Central Secretariat at the address given below. COPYRIGHT PROTECTED DOCUMENT ISO 2008 The reproduction of the terms and definitions contained in this International St
6、andard is permitted in teaching manuals, instruction booklets, technical publications and journals for strictly educational or implementation purposes. The conditions for such reproduction are: that no modifications are made to the terms and definitions; that such reproduction is not permitted for d
7、ictionaries or similar publications offered for sale; and that this International Standard is referenced as the source document. With the sole exceptions noted above, no other part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including phot
8、ocopying and microfilm, without permission in writing from either ISO at the address below or ISOs member body in the country of the requester. ISO copyright office Case postale 56 CH-1211 Geneva 20 Tel. + 41 22 749 01 11 Fax + 41 22 749 09 47 E-mail copyrightiso.org Web www.iso.org Published in Swi
9、tzerland ii ISO 2008 All rights reserved Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Boeing Co/5910770001 Not for Resale, 10/25/2008 04:54:21 MDTNo reproduction or networking permitted without license from IHS -,-,- ISO 22493:2008(E) ISO 2
10、008 All rights reserved iii Contents Page Foreword iv Introduction.v 1 Scope1 2 Abbreviations 1 3 Terms used in the physical basis of SEM.1 4 Terms used in SEM instrumentation.5 5 Terms used in SEM image formation and processing12 6 Terms used in SEM image interpretation and analysis.16 7 Terms used
11、 in the measurement and calibration of SEM image magnification and resolution.18 Bibliography20 Alphabetical index21 Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Boeing Co/5910770001 Not for Resale, 10/25/2008 04:54:21 MDTNo reproduction or
12、 networking permitted without license from IHS -,-,- ISO 22493:2008(E) iv ISO 2008 All rights reserved Foreword ISO (the International Organization for Standardization) is a worldwide federation of national standards bodies (ISO member bodies). The work of preparing International Standards is normal
13、ly carried out through ISO technical committees. Each member body interested in a subject for which a technical committee has been established has the right to be represented on that committee. International organizations, governmental and non-governmental, in liaison with ISO, also take part in the
14、 work. ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of electrotechnical standardization. International Standards are drafted in accordance with the rules given in the ISO/IEC Directives, Part 2. The main task of technical committees is to prepare I
15、nternational Standards. Draft International Standards adopted by the technical committees are circulated to the member bodies for voting. Publication as an International Standard requires approval by at least 75 % of the member bodies casting a vote. Attention is drawn to the possibility that some o
16、f the elements of this document may be the subject of patent rights. ISO shall not be held responsible for identifying any or all such patent rights. ISO 22493 was prepared by Technical Committee ISO/TC 202, Microbeam analysis, Subcommittee SC 1, Terminology. Copyright International Organization for
17、 Standardization Provided by IHS under license with ISO Licensee=Boeing Co/5910770001 Not for Resale, 10/25/2008 04:54:21 MDTNo reproduction or networking permitted without license from IHS -,-,- ISO 22493:2008(E) ISO 2008 All rights reserved v Introduction The scanning electron microscopy (SEM) tec
18、hnique is used to observe and characterize the surface morphology and structure of solid materials, including metal alloys, ceramics, glasses, minerals, polymers, powders, etc., on a spatial scale of micrometer down to nanometer laterally. In addition, three-dimensional structure can be generated by
19、 using a combination of focused ion beam and scanning-electron-based analysis techniques. The SEM technique is based on the physical mechanism of electron optics, electron scattering and secondary electron emission. As a major sub-field of microbeam analysis (MBA), the SEM technique is widely applie
20、d in diverse sectors (high-tech industries, basic industries, metallurgy and geology, biology and medicine, environmental protection, trade, etc.) and has a strong business base that needs standardization. Standardizing the terminology of a technical field is one of the basic prerequisites for devel
21、opment of standards on other aspects of that field. This International Standard is relevant to the need for an SEM terminology that contains consistent definitions of terms as they are used in the practice of scanning electron microscopy by the international scientific and engineering communities th
22、at employ the technique. This International Standard is the second one developed in a package of standards on electron probe microanalysis (EPMA), scanning electron microscopy (SEM), analytical electron microscopy (AEM), energy-dispersive X-ray spectroscopy (EDS), etc., developed or to be developed
23、by Technical Committee ISO/TC 202, Microbeam analysis, Subcommittee SC 1, Terminology, to cover the complete field of MBA. Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Boeing Co/5910770001 Not for Resale, 10/25/2008 04:54:21 MDTNo reproduct
24、ion or networking permitted without license from IHS -,-,- Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Boeing Co/5910770001 Not for Resale, 10/25/2008 04:54:21 MDTNo reproduction or networking permitted without license from IHS -,-,- INTER
25、NATIONAL STANDARD ISO 22493:2008(E) ISO 2008 All rights reserved 1 Microbeam analysis Scanning electron microscopy Vocabulary 1 Scope This International Standard defines terms used in the practice of scanning electron microscopy (SEM). It covers both general and specific concepts, classified accordi
26、ng to their hierarchy in a systematic order, with those terms that have already been defined in ISO 23833 also included, where appropriate. This International Standard is applicable to all standardization documents relevant to the practice of SEM. In addition, some clauses of this International Stan
27、dard are applicable to documents relevant to related fields (e.g. EPMA, AEM, EDS) for the definition of terms which are relevant to such fields. 2 Abbreviations AEM analytical electron microscope/microscopy BSE (BE) backscattered electron CPSEM controlled pressure scanning electron microscope/micros
28、copy CRT cathode ray tube EBIC electron beam induced current EBSD electron backscatter/backscattering diffraction EDS energy dispersive X-ray spectrometer/spectrometry EDX energy dispersive X-ray spectrometry EPMA electron probe microanalyser/analysis ESEM environmental scanning electron microscope/
29、microscopy FWHM full width at half maximum SE secondary electron SEM scanning electron microscope/microscopy VPSEM variable-pressure scanning electron microscope/microscopy 3 Terms used in the physical basis of SEM 3.1 electron optics science that deals with the passage of electrons through electros
30、tatic and/or electromagnetic fields 3.1.1 electron source device that generates electrons necessary for forming an electron beam in the electron optical system Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Boeing Co/5910770001 Not for Resale
31、, 10/25/2008 04:54:21 MDTNo reproduction or networking permitted without license from IHS -,-,- ISO 22493:2008(E) 2 ISO 2008 All rights reserved 3.1.1.1 energy spread diversity of energy of electrons 3.1.1.2 effective source size effective dimension of the electron source 3.1.2 electron emission eje
32、ction of electrons from the surface of a material under certain excitation conditions 3.1.2.1 field emission electron emission caused by the strong electric field on and near the surface of the material 3.1.2.1.1 cold field emission field emission in which the emission process relies purely on the h
33、igh-strength electrostatic field in a high-vacuum environment with the cathode operating at ambient temperature 3.1.2.1.2 thermal field emission Schottky emission field emission in which the emission process relies on both the elevated temperature of the cathode tip and an applied electric field of
34、high voltage in a high-vacuum environment 3.1.2.2 thermionic emission electron emission which relies on the use of high temperature to enable electrons in the cathode to overcome the work function energy barrier and escape into the vacuum 3.1.3 electron lens basic component of an electron optical sy
35、stem, using an electrostatic and/or electromagnetic field to change the trajectories of the electrons passing through it 3.1.3.1 electrostatic lens electron lens employing an electrostatic field formed by a specific configuration of electrodes 3.1.3.2 electromagnetic lens electron lens employing an
36、electromagnetic field formed by a specific configuration of electromagnetic coil (or permanent magnet) and pole piece 3.1.4 focusing aiming the electrons onto a particular point using an electron lens 3.1.5 demagnification numerical value by which the diameter of the electron beam exiting a lens is
37、reduced in comparison to the diameter of the electron beam entering the lens 3.2 electron scattering electron deflection and/or its kinetic energy loss as a result of collision(s) with target atom(s) or electron(s) Copyright International Organization for Standardization Provided by IHS under licens
38、e with ISO Licensee=Boeing Co/5910770001 Not for Resale, 10/25/2008 04:54:21 MDTNo reproduction or networking permitted without license from IHS -,-,- ISO 22493:2008(E) ISO 2008 All rights reserved 3 3.2.1 elastic scattering electron scattering in which energy and momentum are conserved in the colli
39、sion system 3.2.1.1 backscattering electron scattering in which the incident electrons scatter backwards and out of the target after suffering deflections 3.2.2 inelastic scattering electron scattering in which energy and/or momentum are not conserved in the collision system NOTE For inelastic scatt
40、ering, the electron trajectory is modified by a small angle, generally less than 0,01 rad. 3.2.3 scattering cross-section hypothetical area normal to the incident radiation that would geometrically intercept the total amount of radiation actually scattered by a scattering particle NOTE Scattering cr
41、oss-section is usually expressed only as area (m2). 3.2.4 mean free path mean distance between electron scattering events in any material 3.2.5 Bethe range estimate of the total distance an electron can travel in any material (including vacuum and a target), obtained by integrating the Bethe stoppin
42、g power equation over the energy range from the incident value to a low threshold value (e.g. 1 keV) NOTE This assumes that the electron loses energy continuously in the material rather than as occurs in practice where energy is lost in discrete scattering events. 3.3 backscattered electron BSE elec
43、tron ejected from the entrance surface of the specimen by the backscattering process NOTE By convention, an electron ejected with an energy greater than 50 eV may be considered as a backscattered electron. 3.3.1 backscattering coefficient BSE yield ratio of the total number of backscattered electron
44、s to the total number of incident electrons 3.3.2 BSE angular distribution distribution of backscattered electrons as a function of their emitting angle relative to the specimen surface normal 3.3.3 BSE atomic number dependence variation of backscattering coefficient as a function of the atomic numb
45、er of the specimen 3.3.4 BSE beam energy dependence variation of backscattering coefficient with beam energy Copyright International Organization for Standardization Provided by IHS under license with ISO Licensee=Boeing Co/5910770001 Not for Resale, 10/25/2008 04:54:21 MDTNo reproduction or network
46、ing permitted without license from IHS -,-,- ISO 22493:2008(E) 4 ISO 2008 All rights reserved 3.3.5 BSE depth distribution distribution describing the locations of the electrons at their maximum depth in the specimen before subsequently being backscattered from the specimen surface 3.3.6 BSE energy
47、distribution distribution of backscattered electrons as a function of their emitting energy 3.3.7 BSE escape depth maximum depth in a specimen from which a backscattered electron may emerge 3.3.8 BSE lateral spatial distribution two-dimensional distribution of backscattered electrons escaping as a f
48、unction of the distance from the beam impact point to the lateral position of escape 3.4 secondary electron electron emitted from the surface of a specimen as a result of bombardment by the primary electrons NOTE By convention, an electron with energy less than 50 eV is considered as a secondary electron. 3.4.1 SE yield secondary electron coefficient total number of secondary electrons per incident electron 3.4.2 SE angular distrib