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1、IEEE Std 255-1963 IEEE Standard Letter Symbols for Semiconductor Devices (r U a U U 0 U U U F I I LL Published by The Institute of Electrical and Electronics Engineers, Inc 345 East 47th Street, New York, N Y 10017, USA Lkrrmhur 1963 SHO1446 Authorized licensed use limited to: Peking University. Dow
2、nloaded on December 26,2010 at 17:05:01 UTC from IEEE Xplore. Restrictions apply. ERRATA LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES (IEEE No. 255) On pages 6 and 7: All h, y, z ; H, Y and Z characters should have been set in italic type On page 8: The M in the right-hand column should have been set in
3、 italic type Authorized licensed use limited to: Peking University. Downloaded on December 26,2010 at 17:05:01 UTC from IEEE Xplore. Restrictions apply. CONTENTS Page 1 . ELECTRICAL QUANTITIE-S . 1.1 Quantity Symbols . Subscripts for Quantity Symbols 1.2 1.3 The Subscript Sequence Conforms to the Ma
4、thematical Convention for Writing Determinants from a Set of Fundamental Kirchnoffs Equations 2 . ELECTRICAL PARAMETERS . 2.1 Parameter Symbols . 2.2 Subscript for Parameter Symbols . 3 . LETTER SYMBOLS IN ALPHABETICAL ORDER 3 Authorized licensed use limited to: Peking University. Downloaded on Dece
5、mber 26,2010 at 17:05:01 UTC from IEEE Xplore. Restrictions apply. INTRODUCTION These Standards are supplementary to the IRE Standards on Abbreviations, Graphical Symbols, and Mathematical Signs-1948, Section 1. The usage conforms to Section 101, General Principles of Letter Symbol Standardization.
6、This Standard provides a uniform system of letter symbols for electrical quantities and parameters as applied to semiconductor devices in the same way that Section 102 provides symbols for electron tubes. The Standard has been divided into three Sections : 1. Electrical quantities, dealing primarily
7、 with voltage, current, and time quantities. 2. Electrical parameters, dealing with the relationship between specific electrical quantities. 3. List of letter symbols in alphabetical order. Electrical quantities at the device terminals are defined in Section 1. The electrical parameters of Section 2
8、 are ratios of the terminal electrical quantities; i.e., they are two-terminal-pair open- and-short-circuit ratios. Numeric subscripts arc used for those ratios throughout this Standard ; letter subscripts may be used when convenient. ACKNOWLEDGMENT The Institute wishes to ackirowledge its indebtedn
9、ess to those who have so freely given of their time and knowledge and have conducted experimental work on which many of the IEEE publications are based. This publication was prepared jointly by Task Group 28.4.12 of the Semiconductor Devices Subcommittee o f the IRE Solid-state Devices Committee, th
10、e IRE Symbols Committee, and the Rectifier Device Working Group of the Component Subcommittee of the AIEE Semiconductor Rectifiers Committee. IRE Task Group 28.4.12 J. M. Goldey, Chairinan F. P. Burns, Secretary, 1959-61 W. T. Matzen, Secretary, 1961-63 R. S. Biesele N. Holonyak, Jr. F. S. Stein How
11、ard Starke AIEE Rectifier Device Working Group J. R. Thurell, Chairman R. P. Lyon, Secretary P. W. Clarke A. L. DiVenuti L. H. Dixon Alfred Ertel J. Gramels J. Priest F. S. Stein IRE Symbols Committee J. M. Carroll, Chairman C. A. Fricke, Vice-Chairmart H. L. Cook, Secrctary T. N. Anderson D. Drusdo
12、w H. J. Elschner W. J. Everts D. M. Faller R. T. Haviland D. Howell K. K. Kuller L. A. Meadows C. D. Mitchell R. V. Rice S. V. Soanes R. M. Stern R. G. Stranix H. R. Terhune L. H. Warren 0 Copyright 1963 by The Institute of Electrical and Electronics Engineers, Inc. Authorized licensed use limited t
13、o: Peking University. Downloaded on December 26,2010 at 17:05:01 UTC from IEEE Xplore. Restrictions apply. LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES 1. ELECTRICAL QUANTITIES 1.1 Quantity Symbols 1.1.1 Instantaneous values of current, voltage, and power, that vary with time, are represented by the low
14、er- case letter of the proper symbol. Examples: i, v, p 1.1.2 Maximum (peak), average (direct-current), and root-meaii-square values of current, voltage, and power are represented by the upper-case letter of the appropriate symbol. Examples : I , V , P 1.2 Subscripts for Quantity Symbols 1.2.1 Direc
15、t-current values and instantaneous total values are indicated by upper-case subscripts. Examples : ic, IC, ?ER, VEB, Pc, Pc 1.2.2 Alternating-component values are indicated by lower-case subscripts. Examples : i , , I, ieb, v e b , p c . Pc 1.2.3 To distinguish between maximum (peak), aver- age. and
16、 root-mean-square values, maximum values are represeiited by the addition of a subscript M or m, and average by (AV). No;ct Where this distinction is not necessary, the ad- Examples : i , , . , I, Icm, IC(*V) ditional subscript may be omitted. 1.2.4 Symbols to be used as subscripts. (For example, se
17、e Figure 1 and Basic Symbols Chart 1.2.5.) E, e = emitter terminal B, b =base terminal C, c = collector terminal J, j =terminal. general A, a ranode terminal K, k =cathode terminal G, g = gate termiiial X, x = circuit node M, m = maximum value Min, min = minimum value (AV) = average value 1.2.5 .4 f
18、inal subscript may be used to identify the termination of the port other than the one to which the quantity is referred : 0 = Open-circuit termination S = Short-circuit termination X General termination R = Resistive termination V = Bias-Voltage termination This subscript should be upper case if the
19、 other sub- scripts are upper case, and lower case if the other sub- scripts are lower case. Example: Icao. ICES, V(RR)CER 1.2.6 Basic Symbols Chart (Table I) TABLE I SYMBOLS Iiistaiitaneous Value of Alternating Component Root-Mean-Square Value of Alternating Component With additional subscript m, l
20、laximum (peak) Value of Alternating Component Direct-current Value With additional subscript M, Maximum (Peak) Total Value With additional subscript (AV) Direct-current Value with Alternating Component Iiistantaneous Total Value 5 Authorized licensed use limited to: Peking University. Downloaded on
21、December 26,2010 at 17:05:01 UTC from IEEE Xplore. Restrictions apply. 1.2.7 Examples of application of basic symbols chart. IE =emitter direct-current (no alternating com- I. = root-mean-square value of alternating com- i. = instantaneous value of alternating component i= = instantaneous total valu
22、e of emitter current I B ( A v ) = average of emitter current with alternating I . , =maximum (peak) value of the alternating 1.y =maximum total (peak) value of the emitter ponent) ponent of emitter current of emitter current component component of emitter current current 1.3 The Subscript Sequence
23、Conforms to the Mathemat- ical Convention for Writing Determinants from a Set of Fundamental Kirchhoffs Equations 1.3.1 The first subscript designates the terminal at which the current is measured, or where the terminal po- tential is measured with respect to the reference terminal, or circuit node,
24、 designated by the second subscript. (Con- ventional current flow into the terminal from the external circuit is positive.) When the reference terminal or circuit node is understood, the second subscript may be omitted where its use is not required to preserve the meaning of the symbol. Supply volta
25、ge may be indicated by repeating the terminal subscript. The reference terminal may then be designated by the third subscript. 1.3.2 Examples : VEE, VCC, VBB, VEEB, VCCB. VBBC, VKK In devices having more than one terminal of the same type, the terminal suhscripts are modified by adding a number foll
26、owing the subscript and on the same line. 1.3.3 Example : VBI-sz In multiple-unit devices, the terminal subscripts are Example : VIB-SB modified by a number preceding the subscript. 1.3.4 When necessary to distinguish between compo- nents of current or voltage, the symbols may be used as shown in Fi
27、gure 1. The illustration shows a case where a small alternating component is developed in the collector circuit of a transistor. 2. ELECTRICAL PARAMETERS 2.1 Parameter Symbols Value of four-pole matrix parameters, or other resistances, impedances, admittances, etc., inherent in the device, may be re
28、presented by the lower-case symbol with the proper subscripts. 2.1.1 Examples : hiib, Zllb, yalb, hiis, hzie 2.1.2 The four-pole matrix parameters of external cir- cuits and of circuits in which the device forms only a part shall be represented by upper-case symbols with appro- priate subscripts. Ex
29、amples : Hu, 2 2 1 , YPI, YIP 2.2 Subscript for Parameter Symbols upper-case subscript. 2.2.1 Static values of parameters are indicated by the Examples : hllB, ZZIB, YZPC The static value is the slope of the line from the origin to the operating point on the appropriate characteristic curve, i.e., t
30、he quotient of the appropriate electrical quantities at the operating point . Small-signal values of parameters are indicated 2.2.2 hy the lower-case subscript. Examples : hllb. ZZlb, yPpE 2.2.3 The first subscript or subscript pair, in matrix notation, identifies the element of the four-pole matrix
31、. 11 or i = input 22 or o = output 21 or f = forward transfer 12 or r = reverse transfer Examples : VI = hll I 1 + hlrV2 VI = hill + h,V. hofc 1: Voltage and current symbols in matrix nota- tions are designated with a single-digit subscript 1 = input and subscript 2 = output. Nofr -3: The quantities
32、 and parameters in these equa- tions may be complex. The subscript following the numeric pair iden- tifies the circuit configuration. When the common terminal is understood, it may be omitted. e = emitter terminal, common b = base terminal, comnioii c = collector terminal, common j = general termina
33、l, common a = anode terminal, comnion k = cathode terminal, common g = gate terminal, comnioti Examples : (common-base transistor) 11 = hiill + htr V1 Io = hrll + hoVo 2.2.4 It = Yllb Vlb + Yl2bVIb 1 1 = Ylb Vlb + YFbvob 1 2 = YribVlb + Yrrb V a b I o = YrbVib + YobVob I ICm MUIlUYM (PLAII “ALUE or
34、Froor MEIN wJIIA.IE COUPONEHT NO ILTERNITIU. COMPONENT Figure 1 ILLUSTRATION OF PROPER SYMBOL USAGE 6 Authorized licensed use limited to: Peking University. Downloaded on December 26,2010 at 17:05:01 UTC from IEEE Xplore. Restrictions apply. 2.2.5 The subscript “o” or “s” following the subscript ide
35、ntifying circuit configuration for a two-port parameter identifies the termination of the port opposite from the one to which the parameter is referred : o = opposite port open-circuited s = opposite port short-circuited This subscript should be upper case if the other sub- scripts are upper case an
36、d should be lower case if the other subscripts are lower case. Example : Cllbs, C , . 3. LETTER SYMBOLS IN ALPHABETICAL ORDER The following list has been compiled according to the conventions set forth in Sections 1 and 2 of this Standard. In many of the symbols that follow only the direct-current v
37、ersions are listed, e.g., ICDO. Other symbols are easily generated by application of the rules of Sections 1 and 2. CII., CII., CII-, Clt,. Clbs, CI, Cle. - The capacitance measured across the input terminals with the output ter- minals short-circuited to alternating current. Note: The use of the up
38、per-case symbol is an exception Cab, Carbo, Clam, Cau, Cot- C, C, - The capacitance mcasured across the output terminals with the input open- circuited to alternating current. Note: The use o f the upper-case symbol is an exception to the rules set forth in Section 2.1.1. to the rules set forth in S
39、ection 2.1.1. fbflb, fhzle, fhzle - The lowest frequency at which the magnitude of the parameter indicated by the subscript is 0.707 of its low-frequency value. Note: The use of the symbol fa is not recommended. fm - The maximum frequency of oscillation of the device. f - The frequency at which the
40、modulus of the common- emitter small-signal short-circuit forward current transfer ratio, htlel, has decreased to unity. f - The product of the modulus of the common-emitter small-signal short-circuit forward current transfer ratio, IhPICI, multiplied by the frequency of measurement when this latter
41、 is sufficiently high so that the modulus of hale is decreasing with a slope approximately 6 decibels per octave. Note: This is the frequency at which the modulus of hais, ham, hzlc, hFD, hFe, hFC-The static value of the Note: Use of the symbols aFB, aFc, a F E is not recom- halt., h21e, htlS, hfb,
42、hfe, hfc - The small-signal short-cir- Note: Use of the symbols afi, we, are is not recom- bls, hllB, hllc, hIB, hIE, hIc - The static value of the hila hlle, hllc, his, hi., hic -The small-signal value of hzt, is extrapolated to unity. short-circuit forward current transfer ratio. mended. cuit forw
43、ard current transfer ratio. mended. short-circuit input resistance. the short-circuit input impedance. hrte, htfE, httc, hoB, holr, hoc - The static value of the open-circuit output conductance. httb. hzt., hrte, hob, h, h, - The small-signal value of the open-circuit output admittance. hats, him, h
44、lrc, hRB, hRE, hac - The static value of the open-circuit reverse voltage transfer ratio. hiab, hise, hn, hrb, h, hrr - The small-signal value of the open-circuit reverse voltage transfer ratio. Re (hllb), Re ( halt,), Re( hnb) - Real part of the small- signal value of the parameter within the paren
45、thesis. Im (hltb) , Im (hzlb), Im (haat,) - Imaginary part of the small-signal value of the parameter within the parenthesis. IPO, IRO - The current through the collector junction in a PNPN type switch when the switch is in the forward (reverse) blocking state and the gate terminal, if any, is open-
46、circuited. - The currcnt into the terminal indicated by the first sub- script when it is biased in the reverse direction with respect to the reference terminal and the other terminal is open- circuited. IF, I R - The current through the collector junction in a PNPN type switch when it is in the forw
47、ard (reverse) blocking state and the gate terminal is short-circuited to the terminal of tlie adjacent region. The current into the terminal indicated by the first sub- script when it is biased in the reverse direction with respect to the reference terminal and the other terminal is short- circuitcd
48、 to the terminal indicated by the subscript follow- ing the subscript S. n-otc: When tlie last subscript is omitted, the other ter- minal is short-circuited to the reference terminal. lux. IRX - The current through the collector junction in a INPN type switch when the switch is in the forward (rever
49、se) blocking state and the gate terminal is returned to the terminal of the adjacent region through a stated im- pedance and/or bias voltage. Vote: When the return is through a resistance, the sub- script “X” should be replaced by the subscript “R.” When the return is through a stated bias voltage, the subscript “X” should be replaced by tlie subscript “V.” IACX, ICKXC, IKCX, ICAXC;, ICBX, Icex, IERS, IECX, IBEX, IBCX - The current into the terminal indicated by the first sub- script when it is biased in the reverse direction with respect to the reference terminal