《SI2309CDS中文资料.docx》由会员分享，可在线阅读，更多相关《SI2309CDS中文资料.docx（9页珍藏版）》请在三一文库上搜索。
1、SI2309CDS中文资料Vishay SiliconixSi2309CDSP-Channel 60-V (D-S) MOSFETFEATURES?Halogen-free Option Available ?TrenchFET ? Power MOSFETAPPLICATIONS?Load SwitchPRODUCT SUMMARYV DS (V)R DS(on) ()I D (A)d Q g (Typ.)- 600.345 at V GS = - 10 V - 1.6 2.7 nC0.450 at V GS = - 4.5 V- 1.4Notes:a. Surface Mounted on
2、 1 x 1 FR4 board.b. t = 5 s.c. Maximum under Steady State conditions is 166 C/W.d. When T C = 25 C.ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise notedParameter Symbol Limit nitDrain-Source Voltage V DS - 60VGate-Source VoltageV GS 20Continuous Drain Current (T J = 150 C)a, bT C = 25 CI D - 1
3、.6A T C = 70 C - 1.3T A = 25 C - 1.2a, b T A = 70 C- 1.0a, bPulsed Drain Current (10 s Pulse Width)I DM - 8Single Pulse Avalanche Current L = 0.1 mH I AS - 5Continuous Source-Drain Diode CurrentT C = 25 C I S - 1.4T A = 25 C - 0.9a, b Maximum Power DissipationT C = 25 CP D 1.7W T C = 70 C 1.1T A = 2
4、5 C 1.0a, b T A = 70 C0.67a, b Operating Junction and Storage T emperature Range T J , T stg - 55 to 150C Soldering Recommendations (Peak Temperature)c260THERMAL RESISTANCE RATINGSParameter Symbol Typical Maximum UnitMaximum Junction-to-Ambient a, c t 5 s R thJA 92120C/WMaximum Junction-to-Foot (Dra
5、in)Steady StateR thJF5873Vishay SiliconixSi2309CDSNotes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, a
6、nd functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25 C, unless otherwis
7、e notedParameter Symbol Test Conditions Min.Typ.Max.U nitStaticDrain-Source Breakdown Voltage V DS V GS = 0 V , I D = - 250 A- 60V V DS Temperature Coefficient V DS /T J I D = - 250 A - 65mV/C V GS(th) Temperature Coefficient V GS(th)/T J 4.5Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D =
8、 - 250 A - 1- 3VGate-Source LeakageI GSS V DS = 0 V , V GS = 20 V - 100nAZero Gate Voltage Drain Current I DSS V DS = - 60 V , V GS = 0 V - 1A V DS = - 60 V , V GS = 0 V , T J = 55 C- 10On-State Drain Current aI D(on) V DS 5 V , V GS = - 10 V - 6A Drain-Source On-State Resistance a R DS(on) V GS = -
9、 10 V , I D = - 1.25 A 0.2850.345V GS = - 4.5 V , I D = - 1.0 A 0.3600.450Forward T ransconductance a g fsV DS = - 10 V, I D = - 1.0 A2.8SDynamic bInput Capacitance C iss V DS = - 30 V , V GS = 0 V, f = 1 MHz210pFOutput CapacitanceC oss 28Reverse Transfer Capacitance C rss 20Total Gate Charge Q g V
10、DS = - 30 V, V GS = - 4.5 V , ID = - 1.25 A 2.7 4.1nC Gate-Source Charge Q gs 0.8Gate-Drain Charge Q gd 1.2Gate Resistance R g f = 1 MHz7Turn-On Delay Time t d(on) V DD = - 30 V, R L = 30 I D ? - 1 A, V GEN = - 4.5 V , R g = 1 4060nsRise Timet r 3555Turn-Off Delay Time t d(off) 1525Fall Timet f 1020
11、Turn-On Delay Time t d(on) V DD = - 30 V, R L = 30 I D ? - 1 A, V GEN = - 10 V, R g = 1 510Rise Timet r 1020Turn-Off Delay Time t d(off) 1525Fall Timet f1020Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 C- 1.4A Pulse Diode Forward Current I SM - 8Body Dio
12、de VoltageV SD I S = - 0.75 A, V GS = 0 V- 0.8- 1.2V Body Diode Reverse Recovery Time t rr I F = - 1.25 A, dI/dt = 100 A/s, T J = 25 C3060ns Body Diode Reverse Recovery Charge Q rr 3360nC Reverse Recovery Fall Time t a 18nsReverse Recovery Rise Timet b12Gate ChargeOn-Resistance vs. Junction Temperat
13、ureSource-Drain Diode Forward VoltageThreshold VoltageSingle Pulse Power, Junction-to-AmbientVishay SiliconixSi2309CDSTYPICAL CHARACTERISTICS 25C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations.
14、Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:/ Thermal Transient Impedance, Junction-to-AmbientDisclaimer Legal Disclaimer NoticeVish
15、ayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contai
16、ned herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwi
17、se modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The pro
18、ducts shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件买卖网http:/