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1、IC metrology,Measurement Equipment Yield Data Management,Unpatterned Surface Inspection System:,(Photo courtesy of KLA-Tencor Corporation),Monitor Wafer & Patterned Wafer,Patterned Wafer,Monitor Wafer,Measurement Tool Classification,表 7.1,Quality Measures in Wafer Fabrication by,表 7.2,1) Film Thickn
2、ess,Resistivity & Sheet Resistance Four point probe Sheet Resistance(opaque Films) Van Der Pauw (范德堡法） Contour Maps(等值线图） Ellipsometry (Transparent Films)/ (椭偏仪) Reflection Spectroscopy(反射光谱学） X-Ray Film Thickness Photoacoustic Technology(光声技术）,1.Critical film quality parameter: thickness The thickn
3、ess metrologies: A. Opaque film (i.e. Light-blocking, metel) B. Transparent film 2.Additional film quality parameter: surface roughness reflectivity, denisty,lack of pinholes and voids.,Resistivity & Sheet Resistance 正方形薄膜,l,t,w,橫截面 面积（Cross-sectional) = 寬度(w) 長度(l),Four-Point Probe,Typically used f
4、or high-dopant concentration.,Sheet Resistance (Van der Pauw Sheet Resistivity)范德波片電阻率,Sheet Resistance Contour Map,Basic principle of Ellipsometry (椭偏仪）,Laser激光,Filter滤光片,Polarizer 起偏器,Quarter wave plate 波长片,Film being measured,Analyzer 分析仪,Detector 探测器,q,A. Used to measure thin of transparent film
5、s. Be integrated into process tool such as Etch &Planarization.,Reflection Spectroscopy,Air,Oxide,wafer,Film Thickness Measured with X-Ray Fluorescence.,TRXRF method,Normal XRF method,Detector,X-Ray Fluorescence 射线荧光,Scattered x-Ray 散射的X射線,Irradiated(照射)/X-Ray,Detector,Irradiated(照射)/X-Ray,X-Ray Flu
6、orescence 射线荧光,Scattered x-Ray 散射的X射線,1.By measuring X-ray fluorescence (energy represent) The file thickness can be determined 2.Applied primarily to single-layer films.,Photoacoustic Film Thickness Measurement,2) Detailed Stress Map of Wafer,3) Refractive index,Surface Defect,何谓Defect ? Wafer上存在的有
7、形污染与不完美，包括 Wafer上的物理性异物（如：微尘，工艺残留物，不正常反应生成物）。 化学性污染（如：残留化学药品，有机溶剂）。 图案缺陷（如：Photo或etch造成的异常成象，机械性刮伤变形，厚度不均匀造成的颜色异常）。 Wafer本身或制造过程中引起的晶格缺陷 。,Defect 的来源？ 素材本身：包括wafer,气体，纯水，化学药品。 外在环境：包含洁净室，传送系统与程序。 操作人员：包含无尘衣，手套。 设备零件老化与制程反应中所产生的副生成物。 现代化的Fab中75%90%的微粒污染来自于设备与工艺本身，而洁净室与操作人员约各占 510%。,Random defect: Def
8、ect分布很散乱 Cluster defect: Defect 集中在某一区域 Repeating defect: Defect重复出现在同一区域,通常与Photo相关。,Defect Type by Location,Defect Type by Yield,Killer defect: Non-killer defect: Nuisance defect: (grain/ discolor),Inspection result file defect size defect location defect map,How does Defect Information Collect?,I
9、n line,Off line,Wafer inspection tool,DDMS,Link with MES (Lot disposition) YMS (Defect data analysis) review station (Defect classification),Review station,Defect result file,Defect classification Defect image,Defect Data Management System (DDMS) Configuration,KLA2360,COMPLUS,COMPLUS,COMPLUS,Inspect
10、ion Tool: Bright field: K-T KLA2360/2365, TSK WW1400 Dark field: K-T AIT UV/X-UV, AMAT Complus/2T E-beam: K-T eS-31 Review station: OM: Leica INS-3000 SEM: AMAT SEMVision G2,Tools & Inspection Theories,Inspection tool Comparison,Item,E-beam,Tool type,Complus,AIT,es-31,Vendor,AMAT,K-T,K-T,Light sourc
11、e,Laser (532 nm,2W),Laser (488nm,75mW),E-beam,Optical,normal,oblique,normal,Resolution,Highest,Throughput,Lowest,Price,Highest,suitable,layer,Contact/via,High,Pattern layer,CMP, film deposition,Lowest,Highest,Lowest,UV/ visible,normal,High,Low,Bright field,Dark field,K-T,KLA 2360,Surface Defect,Unpa
12、tterned Surface Defect Optical Microscopy Optical System Light Scattering Defect detection Particle per wafer per pass Patterned Surface Defects Light Scattering on Patterned Wafers,Dark field & Bright field Detection,Wafer inspection System,(Photo courtesy of Inspex),Schematic of Optical System,Pha
13、se and intensity detection,Data generation, Processing ,display are net worked with factory management software.,Light Scatter Defect Detection,入射光,光束扫描,光检测器,微粒,晶圓移動方向,散射光束,反射光,检测散射光,圖 7.18,Be a dominant technology for tool monitor of surface defects with both unpatterned and partterned wafer primar
14、ily ,because its high speed measurement provides rapid results during manufacturing process run,Patterned Surface Defect,1. The majority of defects on patterned wafers are detected ,using light-scattering techniques. 2. The major defects on product wafers are particles, scratches, and pattern defect
15、s. 3. Optical microscopy is commonly usde to detect surface defect on patterned wafer.,Other metrology tools,Critical Dimension (CD) Scanning Electron Microscope(SEM) CD SEM Step coverage(台阶覆盖） Overlay Registration(重叠对准） Capacitance-Voltage (C-V) test（电容电压测试） Contact Angle(接触角度）,CD-SEM simple schema
16、tic,CD-SEM,1. CD SEM has high solution imaging with automated equipment control that rapidly evacuates the chamber to the desired vacuum, automactically positions the wafer. 2. CD SEM can examine and measure wafers from all orientations and tilt,Angles of up to 600, 3. SEM is a sophisticate(复杂的）micr
17、oscope that functions by creating a highly focused beam of electrons that scans an object while detectors measure the resulting scattered electrons.22. 4. A CD SEM aslo can be used to perform defect review and analysis.,Step Coverage,表面輪廓,A high resolution ,nondestructive surface profiler with a sty
18、lus tip is used to measure step coverage and other features on the wafer surface.,Overlay Registration,Used following the photo process to measure the ability of the tools And processes to accurately print photoresist patterns over a previous -etched pattern on a wafer.,閘極區之兩電容器的MOS模型,圖 7.24,C-V測試設定
19、和略圖,圖 7.25,n型矽的電容vs.電壓,圖 7.26,電容,C-V測試裡的離子電荷收集,溫度大約為200 300,電源供應器,氧化物,圖 7.27,於C -V測試中，將帶正電的離子驅趕至氧化物矽之介面,n型矽的電壓改變,圖 7.28,電容,接觸角度,圖 7.29,分析儀器,二次離子質譜儀 (SIMS) 飛行式二次離子質譜儀 (TOF-SIMS) 原子力顯微鏡 (AFM) Auger電子光譜儀 (AES) X射線電子光光譜儀 (XPS) 穿透式電子顯微鏡 (TEM) 能量與波長分散光譜儀 (EDX和WDX) 聚焦離子束 (FIB),分析儀器的相對重要性,圖 7.30,表面物質的離子束濺擊,
20、圖 7.31,雙重電漿式之離子生產,圖 7.32,TOF-SIMS質譜儀規則,圖 7.33,原子力顯微鏡概要圖,圖 7.34,Auger電子光譜儀,以電子束射向待測樣本，樣本表面可激發且射出Auger電子 (Auger electron) 此項技術對樣本表面處非常敏感，量測深度約10到50。 不同元素所發射的Auger電子，其能量亦不相同。,XPS量測概要圖,圖 7.35,TEM概要圖,圖 7.36,半導體製程中的TEM應用實例,表 7.3,能量分散光譜儀,圖 7.37,聚焦離子束研磨,圖 7.38,E-beam Inspection tool,Defect inspection method: Use e-beam to get the image then do image comparison,Review Station,OM review station: 接收光学信号的optical microscope. 分辨率较差,但速度较快,使用较方便,Review Station,Review SEM SEM (scanning electron microscope) review tool 接收电子信号. 分辨率较高但速度慢,可分析defect成分,并可旋转或倾斜defect来做分析,